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POWER DARLINGTON TRANSISTORS
■ SGS-THOMS O N PREF ERRE D SA LES TYP E S
■ COMPLEMEN TA RY PNP - NPN DEVI CES
■ INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
■ LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The 2N6284 is a silicon epitaxial-base NPN
power transistor in monolithic Darlington
configuration mounted in Jedec TO-3 metal case.
It is inteded for general purpose amplifier and low
frequency switching applications.
The complementary PNP types is 2N6287.
2N6284
2N6287
COMPLE MENTARY SILICON
1
2
TO-3
INTERNAL SCHEMATIC DIAGRAM
R1 Typ. = 8 KΩ R2 Typ. = 60 Ω
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
NPN 2N6284
PNP 2N6287
V
V
V
I
P
T
For PNP types voltage and current values are negative.
Collector-Base Voltage (IE = 0) 100 V
CBO
Collector-Emitter Voltage (IB = 0) 100 V
CEO
Emitter-Base Voltage (IC = 0) 5 V
EBO
Collector Current 20 A
I
C
Collector Peak Current 40 A
CM
Base Current 0.5 A
I
B
Total Dissipation at Tc ≤ 25 oC 160 W
tot
Storage Temperature -65 to 200
stg
Max. Operating Junction Temperature 200
T
j
o
C
o
C
June 1997
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2N6284 / 2N6287
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 1.09
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CEV
I
CEO
I
EBO
V
CEO(sus)
Collector Cut-off
Current (V
= -1.5V)
BE
Collector Cut-off
Current (I
= 0)
B
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
= rated V
V
CE
VCE = rated V
= 50 V 1 mA
V
CE
= 5 V 2 mA
V
EB
CEO
Tc = 150 oC
CEO
0.5
5
IC = 100 mA 100 V
Sustaining Voltage
V
CE(sat)
V
BE(sat)
∗ Collector-Emitter
Saturation Voltage
∗ Base-Emitter
IC = 10 A IB = 40 mA
I
= 20 A IB = 200 mA
C
2
3
IC = 20 A IB = 200 mA 4 V
Saturation Voltage
∗ Base-Emitter Voltage IC = 10 A VCE = 3 V 2.8 V
V
BE
hFE∗ DC Current Gain IC = 10 A VCE = 3 V
I
= 20 A VCE = 3 V
C
h
Small Signal Current
fe
IC = 3 A VCE = 10 V f = 1KHz 300
750
100
18000
Gain
C
CBO
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Collector Base
Capacitance
IE = 0 VCB = 10 V f = 100KHz
for NPN types
for PNP types
400
600
mA
mA
V
V
pF
pF
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P003F
TO-3 MECHANICAL DATA
2N6284 / 2N6287
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 11.00 13.10 0.433 0.516
B 0.97 1.15 0.038 0.045
C 1.50 1.65 0.059 0.065
D 8.32 8.92 0.327 0.351
E 19.00 20.00 0.748 0.787
G 10.70 11.10 0.421 0.437
N 16.50 17.20 0.649 0.677
P 25.00 26.00 0.984 1.023
R 4.00 4.09 0.157 0.161
U 38.50 39.30 1.515 1.547
V 30.00 30.30 1.187 1.193
mm inch
P
A
G
U
V
N
O
B
D
C
E
R
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2N6284 / 2N6287
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or ot h erwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifi cations mentioned
in this publication are subject to change without notice. This publication sup ersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices o r systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
SGS-THOMSON Microelectronics GROUP OF COMPANIES
. . .
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