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INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2N6275
DESCRIPTION
·High Switching Speed
·High DC Current Gain-
: h
·Low Collector Saturation Voltage : V
·Complement to Type 2N6378
APPLICATIONS
·Designed for use in industrial-military power amplifier and
ABSOLUTE MAXIMUM RATINGS(T
= 30-120@ IC= 20A
FE
=1.0V(Min.)@ IC= 20A
CE(sat)
switching circuit applications.
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
CBO
CEO
I
P
T
T
EBO
I
C
CM
I
B
C
J
stg
Collector- Base Voltage 140 V
Collector-Emitter Voltage 120 V
Emitter-Base Voltage 6 V
Collector Current-Continuous 50 A
Collector Current-Peak 100 A
B Base Current-Continuous 20 A
Collector Power Dissipation @TC=25℃ 250 W
Junction Temperature 200 ℃
Storage Temperature Range -65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
th j-c
Thermal Resistance,Junction to Case 0.7
℃/W
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2N6275
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
V
CEO(SUS)
V
CE
(sat)-1
V
CE
(sat)-2
V
BE
(sat)-1
V
BE
(sat)-2
V
BE
I
CE
I
CE
I
EBO
h
FE-1
(on)
O
X
Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 120 V
Collector-Emitter Saturation Voltage IC= 20A; IB= 2A 1.0 V
Collector-Emitter Saturation Voltage IC= 50A; IB= 10A 3.0 V
Base-Emitter Saturation Voltage IC= 20A; IB= 2A 1.8 V
Base-Emitter Saturation Voltage IC= 50A; IB= 10A 3.5 V
Base-Emitter On Voltage IC= 20A; VCE= 4V 1.8 V
Collector Cutoff Current VCE= 60V; IB= 0 B 50
Collector Cutoff Current
= 140V; V
V
CE
VCE= 140V; V
=1.5V
BE(off)
=1.5V; TC=150℃
BE(off)
10
1.0
μA
μA
mA
Emitter Cutoff Current VEB= 6V; IC= 0 0.1 mA
DC Current Gain IC= 1A; VCE= 4V 50
h
h
FE-2
FE-3
C
f
T
OB
DC Current Gain IC= 20A; VCE= 4V 30 120
DC Current Gain IC= 50A; VCE= 4V 10
Current-Gain—Bandwidth Product IC= 1A; VCE= 10V 30 MHz
Output Capacitance
Switching times
t
r
t
s
t
f
Rise Time VCC= 80V, IC= 20A, IB1= 2A, V
Storage Time 0.80
Fall Time
= 0; VCB= 10V; f
I
E
V
= 80V, IC= 20A, IB1= -IB2= 2A
CC
= 0.1MHz
test
= 5V 0.35
BE(off)
600 pF
μs
μs
0.25
μs
isc Website：www.iscsemi.cn
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