Datasheet 2N5684, 2N5686 Datasheet (ON Semiconductor)

2N5684 (PNP), 2N5686 (NPN)

High-Current
Complementary Silicon
Power Transistors

These packages are designed for use in high-power amplifier and

switching circuit applications.

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Features

•High Current Capability - I

•DC Current Gain - h

FE

Continuous = 50 Amperes

C

= 15-60 @ IC = 25 Adc

•Low Collector-Emitter Saturation Voltage -

V

= 1.0 Vdc (Max) @ IC = 25 Adc

CE(sat)

•Pb-Free Packages are Available*

MAXIMUM RATINGS (Note 1)

Rating Symbol Value Unit

Collector-Emitter Voltage V

Collector-Base Voltage V

Emitter-Base Voltage V

Collector Current - Continuous I

Base Current I

Total Power Dissipation @ TC = 25°C
Derate above 25°C

Operating and Storage Temperature
Range

CEO

P

TJ, T

CB

EB

C

B

D

stg

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction-to-Case

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

1. Indicates JEDEC Registered Data.

300

250

200

150

q

JC

80 Vdc

80 Vdc

5.0 Vdc

50 Adc

15 Adc

300

1.715

-65 to +200 °C

0.584 °C/W

mW

mW/°C

50 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS

60-80 VOLTS, 300 WATTS

MARKING
DIAGRAM

2N568xG

AYYWW

MEX

TO-204 (TO-3)

CASE 197A

STYLE 1

2N568x = Device Code

G = Pb-Free Package
A = Location Code
YY = Year
WW = Work Week
MEX = Country of Orgin

ORDERING INFORMATION

Device Package Shipping

2N5684G TO-3

2N5686 TO-3 100 Units/Tray

2N5686G TO-3

x = 4 or 6

100 Units/Tray

(Pb-Free)

100 Units/Tray

(Pb-Free)

100

, POWER DISSIPATION (WATTS)

50

D

P

0

0 20 40 60 80 100 120 140 160 180 200

TEMPERATURE (°C)

Figure 1. Power Derating

Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed.

© Semiconductor Components Industries, LLC, 2007

October, 2007 - Rev. 12

1 Publication Order Number:

*For additional information on our Pb-Free strategy

and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.

2N5684/D

2N5684 (PNP), 2N5686 (NPN)

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

ELECTRICAL CHARACTERISTICS (T

= 25_C unless otherwise noted) (Note 2)

C

Characteristic

OFF CHARACTERISTICS

Collector-Emitter Sustaining Voltage (Note 3) (IC = 0.2 Adc, IB = 0)

Collector Cutoff Current (VCE = 40 Vdc, IB = 0)

Collector Cutoff Current

(VCE = 80 Vdc, V

(VCE = 80 Vdc, V

= 1.5 Vdc, TC = 150_C)

EB(off)

EB(off)

= 1.5 Vdc)

Collector Cutoff Current (VCB = 80 Vdc, IE = 0)

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

ON CHARACTERISTICS

DC Current Gain (Note 3)

(IC = 25 Adc, VCE = 2.0 Vdc)
(IC = 50 Adc, VCE = 5.0 Vdc)

Collector-Emitter Saturation Voltage (Note 3)

(IC = 25 Adc, IB = 2.5 Adc)

(IC = 50 Adc, IB = 10 Adc)

Base-Emitter Saturation Voltage (Note 2) (IC = 25 Adc, IB = 2.5 Adc)

Base-Emitter On Voltage (Note 2) (IC = 25 Adc, VCE = 2.0 Vdc)

DYNAMIC CHARACTERISTICS

Current-Gain - Bandwidth Product (IC = 5.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)

Output Capacitance 2N5684
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) 2N5686

Small-Signal Current Gain (IC = 10 Adc, VCE = 5.0 Vdc, f = 1.0 kHz)

2. Indicates JEDEC Registered Data.

3. Pulse Test: Pulse Width v 300 μs, Duty Cycle v 2.0%.

Symbol

V

CEO(sus)

I

CEO

I

CEX

I

CBO

I

EBO

h

FE

V

CE(sat)

V

BE(sat)

V

BE(on)

f

T

C

ob

h

fe

Min

80

-

-

-

-

-

15

5.0

-

-

-

-

2.0

-

-

15

Max

-

1.0

2.0
10

2.0

5.0

60

-

1.0

5.0

2.0

2.0

-

2000
1200

-

Unit

Vdc

mAdc

mAdc

mAdc

mAdc

-

Vdc

Vdc

Vdc

MHz

pF

+2.0 V

0

tr ≤

20ns

DUTY CYCLE ≈ 2.0%

0

-12V

DUTY CYCLE ≈ 2.0%

Figure 2. Switching Time Test Circuit

VCC-30 V

R

L

TO SCOPE

R

B

tr ≤ 20 ns

-12V

10 to 100 μs

VCC-30 V

R

+10V

L

TO SCOPE

R

B

tr ≤ 20ns

10 to 100 μs

VBB+4.0 V

FOR CURVES OF FIGURES 3 & 6, RB & RL ARE VARIED.
INPUT LEVELS ARE APPROXIMATELY AS SHOWN.
FOR NPN CIRCUITS, REVERSE ALL POLARITIES.

tr ≤ 20 ns

t, TIME (s)μ

1.0

0.7
t

0.5

r

0.3

0.2

t

d

2N5684 (PNP)
2N5686 (NPN)

0.1

0.07

0.05

0.03

0.02

0.01

0.5

TJ = 25°C
IC/IB = 10
VCC = 30 V

0.7 1.0 2.0 3.0 5.0 7.0 10 50
IC, COLLECTOR CURRENT (AMP)

Figure 3. Turn-On Time

30

20

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2

1.0

0.7

D = 0.5

0.5

0.3

0.2

0.1

0.07

0.05

0.03

RESISTANCE (NORMALIZED)

0.02

r(t), EFFECTIVE TRANSIENT THERMAL

0.01

0.1

0.05

0.02

SINGLE PULSE

0.02

2N5684 (PNP), 2N5686 (NPN)

0.2

P

θJC(t) = r(t) θ
θJC = 0.584°C/W MAX

D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t

t, TIME (ms)

T

J(pk)

0.01

0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 2000500

- TC = P

JC

(pk) θJC

1

(t)

Figure 4. Thermal Response

(pk)

t

1

t

2

DUTY CYCLE, D = t1/t

2

1000

100

50

20

10

5.0

2.0

1.0

0.5

, COLLECTOR CURRENT (AMP)

C

I

0.2

0.1

1.0

dc

TJ = 200°C
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
(SINGLE PULSE)
CURVES APPLY BELOW

RATED V

CEO

2.0 3.0 7.0 10 20 30 50 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

5.0

500 μs

5.0 ms

2N5684, 2N5686

Figure 5. Active-Region Safe Operating Area

4.0

3.0

2.0

1.0

0.8

t, TIME (s)μ

0.6

0.4

0.3

0.2

0.5

0.7 1.0 2.0 3.0 7.0 20 50

2N5684 (PNP)
2N5686 (NPN)

t

s

t

f

5.0

IC, COLLECTOR CURRENT (AMP)

10

Figure 6. Turn-Off Time

1.0 ms

100 μs

70

TJ = 25°C
IB1 = I

B2

IC/IB = 10
VCE = 30 V

30

There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC - V
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.

The data of Figure 5 is based on T

= 200_C; TC is

J(pk)

variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
v 200_C. T

may be calculated from the data in

J(pk)

J(pk)

Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.

5000

TJ = 25°C

3000

2000

C

ib

C

1000

C, CAPACITANCE (pF)

700

500

0.1

C

ib

2N5684 (PNP)
2N5686 (NPN)

2.0 5.0 10 20 100500.2 0.5 1.0

VR, REVERSE VOLTAGE (VOLTS)

Figure 7. Capacitance

ob

C

ob

CE

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2N5684 (PNP), 2N5686 (NPN)

PNP
2N5684

500

300 VCE = 2.0 V
200

100

70

50

30

, DC CURRENT GAIN

20

FE

h

10

7.0

5.0

TJ = +150°C

+25°C

-55°C

0.5

0.7 1.0 2.0 5.0 7.0 10 20 50

3.0 30

IC, COLLECTOR CURRENT (AMP)

VCE = 10 V

Figure 8. DC Current Gain

2.0

TJ = 25°C

1.6

40 A

1.2

IC = 10 A

25 A

NPN
2N5686

500

300
200

100

70

50

30

, DC CURRENT GAIN

20

FE

h

10

7.0

5.0

2.0

1.6

1.2

0.5

TJ = +150°C

+25°C

-55°C

0.7 1.0 2.0 5.0 7.0 10 20 50

IC = 10 A

3.0 30

IC, COLLECTOR CURRENT (AMP)

25 A

40 A

VCE = 2.0 V
VCE = 10 V

TJ = 25°C

0.8

0.4

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

CE

V

0

0.1

0.2 1.0 2.0 5.0 10

0.5 3.0

IB, BASE CURRENT (AMP)

Figure 9. Collector Saturation Region

2.5

TJ = 25°C

2.0

1.5

V

@ IC/IB = 10

BE(sat)

1.0

V, VOLTAGE (VOLTS)

0.5

0

0.5

0.7 1.0 2.0 3.0 5.0 10 20 50

VBE @ VCE = 2.0 V

V

@ IC/IB = 10

CE(sat)

IC, COLLECTOR CURRENT (AMP)

7.0

0.8

0.4

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

CE

V

0

0.1

2.0

1.6

1.2

0.8

V, VOLTAGE (VOLTS)

0.4

30

0

0.5

Figure 10. “On” Voltages

0.2 1.0 2.0 5.0 10

TJ = 25°C

V

@ IC/IB = 10

BE(sat)

0.7 1.0 2.0 3.0 5.0 10 20 50

0.5 3.0

0.3

IB, BASE CURRENT (AMP)

VBE @ VCE = 2.0 V

V

@ IC/IB = 10

CE(sat)

IC, COLLECTOR CURRENT (AMP)

30

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4

2N5684 (PNP), 2N5686 (NPN)

PACKAGE DIMENSIONS

TO-204 (TO-3)

CASE 197A-05

ISSUE K

A

N

C

E

2 PLD

0.30 (0.012) Y

U

V

H

L

2

1

G

K

-Y-

-T-

M

SEATING
PLANE

M

Q

T

M

B

-Q-

0.25 (0.010) T

M

M

Y

NOTES:

1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

DIM MIN MAX MIN MAX

A 1.530 REF 38.86 REF
B 0.990 1.050 25.15 26.67
C 0.250 0.335 6.35 8.51
D 0.057 0.063 1.45 1.60
E 0.060 0.070 1.53 1.77
G 0.430 BSC 10.92 BSC
H 0.215 BSC 5.46 BSC
K 0.440 0.480 11.18 12.19
L 0.665 BSC 16.89 BSC
N 0.760 0.830 19.31 21.08
Q 0.151 0.165 3.84 4.19
U 1.187 BSC 30.15 BSC
V 0.131 0.188 3.33 4.77

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

MILLIMETERSINCHES

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2N5684/D

5