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■ SGS-THOMSONPREFERRED SALESTYPE
■ NPNTRANSISTOR
DESCRIPTION
The 2N5657 is a silicon epitaxial-base NPN
transistor in Jedec SOT-32 plastic package. It is
intended for use output amplifiers, low current,
high voltage convertersand AC line relays.
2N5657
SILICON NPN TRANSISTOR
1
2
3
SOT-32
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parame t er Val u e Uni t
V
V
V
I
P
T
Collector-Base Voltage (IE= 0) 375 V
CBO
Collector-Emitter Voltage (IB= 0) 350 V
CEO
Emitter-Base Voltage (IC=0) 6 V
EBO
Collect or Current 0.5 A
I
C
Collect or Peak Current 1 A
CM
Base Current 0.25 A
I
B
Total Dissipati on at Tc≤ 25oC20W
tot
Stora ge Tem perat ure -65 to 150
stg
Max. Operati ng Junction Tem perat u r e 150
T
j
o
C
o
C
June 1997
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2N5657
THERMAL DATA
R
thj-case
Ther mal Resistance Junction-cas e Max 6.25
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwise specified)
case
Symbol Parameter Test Cond ition s Min. Typ. Max. Unit
I
CBO
I
CEV
I
CEO
I
EBO
V
(BR) CEO
Collector Cut- of f
Current (I
E
=0)
Collector Cut- of f
Current (V
= -1. 5V )
BE
Collector Cut- of f
Current (I
B
=0)
Emit ter Cut- o f f Current
=0)
(I
C
∗ Collector- E mitter
V
=375V 0.01 mA
CE
V
=350V
CE
=250V Tc=100oC
V
CE
V
=250V 0.1 mA
CE
V
=6V 0.01 mA
EB
0.1
1
IC= 1 m A 350 V
Break dow n Voltage
V
CEO(sus)
∗ Co llector-Emitter
IC= 100 mA L = 50 mH 350 V
Sust aining Voltage
V
∗ Collector-Emitter
CE(sat)
Saturation Volta ge
V
∗ Base-Emitt er V oltage IC=0.1A VCE=10V 1 V
BE
h
∗ DC Current Gain IC=50mA VCE=10V
FE
h
Small Signal Current
fe
IC=0.1A IB=10mA
=0.25A IB=25mA
I
C
=0.5A IB=0.1A
I
C
25
=0.1A VCE=10V
I
C
=0.25A VCE=10V
I
C
=0.5A VCE=10V
I
C
30
15
IC=0.1A VCE= 10 V f = 1KHz 20
5
1
2.5
10
250
Gain
Tr ansition freque ncy IC=50mA VCE=10V f=10MHz 10 MHz
T
Collector Base
VCB= 10 V f = 100KHz 25 pF
C
f
CBO
Capacit a nc e
∗
Pulsed: Pulse duration = 300µs, duty cycle1.5 %
mA
mA
V
V
V
Safe Operating Area DeratingCurve
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2N5657
DCCurrent Gain (NPN type)
CollectorEmitterSaturationVoltage (NPN type)
DC Current Gain (PNP type)
Collector EmitterSaturationVoltage(PNPtype)
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2N5657
SOT-32(TO-126)MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 7.4 7.8 0.291 0.307
B 10.5 10.8 0.413 0.445
b 0.7 0.9 0.028 0.035
b1 0.49 0.75 0.019 0.030
C 2.4 2.7 0.040 0.106
c1 1.0 1.3 0.039 0.050
D 15.4 16.0 0.606 0.629
e 2.2 0.087
e3 4.15 4.65 0.163 0.183
F 3.8 0.150
G 3 3.2 0.118 0.126
H 2.54 0.100
H2 2.15 0.084
mm inch
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H2
0016114
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2N5657
Informationfurnished isbelieved to be accurate and reliable. However, SGS-THOMSON Microelectronics assumesno responsability for the
consequencesof use of such informationnor forany infringementof patentsor other rights ofthird partieswhich may results from its use.No
license is grantedby implicationorotherwise underanypatentor patentrights of SGS-THOMSONMicroelectronics. Specificationsmentioned
in thispublicationare subject tochange without notice. This publicationsupersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproducts arenotauthorizedfor useascriticalcomponents in life supportdevicesor systemswithout express
written approvalof SGS-THOMSONMicroelectonics.
1997SGS-THOMSONMicroelectronics -Printed in Italy- All RightsReserved
Australia- Brazil - Canada- China- France - Germany- Hong Kong- Italy- Japan- Korea -Malaysia -Malta - Morocco- TheNetherlands -
Singapore - Spain- Sweden - Switzerland- Taiwan -Thailand- UnitedKingdom- U.S.A
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