Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon PNP Power Transistors 2N5611
DESCRIPTION
·DC Current Gain : h
·Wide Area of Safe Operation
·Collector-Emitter Sustaining Voltage-
·Complement to Type 2N5612
APPLICATIONS
·Designed for use in high frequency power amplifiers, audio
power amplifier and drivers.
ABSOLUTE MAXIMUM RATINGS(T
= 30-90@IC= -2.5A
FE
: V
CEO(SUS)
SYMBOL PARAMETER VALUE UNIT
= -100V(Min)
=25℃)
a
V
V
V
T
CBO
CEO
EBO
I
C
P
C
T
J
stg
Collector-Base Voltage -120 V
Collector-Emitter Voltage -100 V
Emitter-Base Voltage -6 V
Collector Current-Continuous -5 A
Collector Power Dissipation@TC=25℃
Junction Temperature 150
Storage Temperature -65~150
25 W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
th j-c
Thermal Resistance,Junction to Case 6.0 ℃/W
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon PNP Power Transistors 2N5611
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
V
CEO(SUS)
V
CE
V
BE
I
CEO
I
CBO
I
EBO
h
FE
f
(sat)
(sat)
T
Collector-Emitter Sustaining Voltage IC= -50mA ; IB= 0 -100 V
Collector-Emitter Saturation Voltage IC= -2.5A; IB= -0.25A B -0.75 V
Base-Emitter Saturation Voltage IC= -2.5A; IB= -0.25A B -1.45 V
Collector Cutoff Current VCE= -100V; IB= 0 -1.0 mA
Collector Cutoff Current VCB= -120V; IE= 0 -0.1 mA
Emitter Cutoff Current VEB= -6V; IC= 0 -0.1 mA
DC Current Gain IC= -2.5A ; VCE= -5V 30 90
Current-Gain—Bandwidth Product IC= -0.5A ; VCE= -10V 50 MHz
isc Website：www.iscsemi.cn
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