Datasheet 2N5550, 2N5551 Datasheet (ON Semiconductor)

Download

Page 1

2N5550, 2N5551

Preferred Device

Amplifier Transistors

NPN Silicon

Features

• These are Pb−Free Devices*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector − Emitter V oltage

2N5550 2N5551

Collector − Base Voltage

2N5550

2N5551 Emitter − Base Voltage V Collector Current − Continuous I Total Device Dissipation @ TA = 25°C

Derate above 25°C Total Device Dissipation @ TC = 25°C

Derate above 25°C Operating and Storage Junction

Temperature Range

CEO

CBO

EBO

TJ, T

stg

140 160

160 180

6.0 Vdc 600 mAdc 625

5.0

1.5

−55 to +150 °C

Vdc

mW/°C

TO−92 CASE 29 STYLE 1

http://onsemi.com

COLLECTOR

BASE

EMITTER

STRAIGHT LEAD

BULK PACK

BENT LEAD

TAPE & REEL

AMMO PACK

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Ambient R Thermal Resistance, Junction−to−Case R

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

200 °C/W

83.3 °C/W

MARKING DIAGRAM

555x

AYWWG

x = 0 or 1 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet.

Preferred devices are recommended choices for future use and best overall value.

March, 2007 − Rev. 5

1 Publication Order Number:

2N5550/D

Page 2

2N5550, 2N5551

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 1)

(IC = 1.0 mAdc, IB = 0) 2N5550

Collector−Base Breakdown Voltage

= 100 mAdc, IE = 0 ) 2N5550

Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0)

Collector Cutoff Current

(VCB = 100 Vdc, IE = 0) 2N5550 (VCB = 120 Vdc, IE = 0) 2N5551 (VCB = 100 Vdc, IE = 0, TA = 100°C) 2N5550 (VCB = 120 Vdc, IE = 0, TA = 100°C) 2N5551

Emitter Cutoff Current

(VEB = 4.0 Vdc, IC = 0)

ON CHARACTERISTICS (Note 1)

DC Current Gain

(IC = 1.0 mAdc, VCE = 5.0 Vdc) 2N5550 (IC = 10 mAdc, VCE = 5.0 Vdc) 2N5550 (IC = 50 mAdc, VCE = 5.0 Vdc) 2N5550

Collector−Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc) Both Types (IC = 50 mAdc, IB = 5.0 mAdc) 2N5550

Base−Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc) Both Types (IC = 50 mAdc, IB = 5.0 mAdc) 2N5550

SMALL−SIGNAL CHARACTERISTICS

Current−Gain — Bandwidth Product

(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz)

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Input Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 2N5550

Small−Signal Current Gain

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

Noise Figure

(IC = 250 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz) 2N5550

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

2N5551

2N5551 2N5551 2N5551

2N5551

(BR)CEO

(BR)CBO

(BR)EBO

CBO

EBO

CE(sat)

BE(sat)

obo

ibo

140 160

160 180

−

Vdc

−

Vdc

−

6.0 − Vdc

−

100

nAdc mAdc

− 50 nAdc

60 80 60 80 20 30

−

100 300 MHz

−

− 250 250

−

0.15

0.25

0.20

1.0

1.2

1.0

−

Vdc

− 6.0 pF

−

50 200 −

30 20

−

8.0

http://onsemi.com

Page 3

2N5550, 2N5551

500

300

200

100

h , DC CURRENT GAIN

7.0

5.0

0.1 0.2 0.3 0.5 0.7 1.0

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

, COLLECTOR−EMITTER VOLTAGE (VOLTS)

0.1

0.005 0.01 0.2 0.5 1.0

TJ = 125°C

25°C

−55°C

IC = 1.0 mA

0.02 0.05 0.1

3.0

2.0

IC, COLLECTOR CURRENT (mA)

Figure 1. DC Current Gain

10 mA

IB, BASE CURRENT (mA)

VCE = 1.0 V VCE = 5.0 V

5.0 7.0 10 20 30 50 70 100

30 mA

2.0 20 50

5.0

100 mA

−1

−2

−3

, COLLECTOR CURRENT (A)μI

−4

−5

0.4 0.3 0.1

Figure 2. Collector Saturation Region

VCE = 30 V

TJ = 125°C

IC = I

CES

75°C

REVERSE FORWARD

25°C

0.2 0 0.1 0.2 0.40.3 0.60.5 VBE, BASE−EMITTER VOLTAGE (VOLTS)

Figure 3. Collector Cut−Off Region

1.0

0.8

0.6

0.4

V, VOLTAGE (VOLTS)

0.2

0.1 0.2 0.5

http://onsemi.com

TJ = 25°C

BE(sat)

CE(sat)

0.3

@ IC/IB = 10

1.0 2.0 5.0 10 20 50 100

3.0 30

IC, COLLECTOR CURRENT (mA)

Figure 4. “On” Voltages

Page 4

10.2 V

10 ms

INPUT PULSE

tr, tf ≤ 10 ns DUTY CYCLE = 1.0%

Values Shown are for IC @ 10 mA

0.25 mF

, TEMPERATURE COEFFICIENT (mV/ C)°θ

−0.5

−1.0

−1.5

−2.0

−2.5

2.5

2.0

1.5

1.0

0.5

−8.8 V

100

5.1 k

100

2N5550, 2N5551

TJ = − 55°C to +135°C

qVC for V

CE(sat)

qVB for V

BE(sat)

1.0 2.0 5.0 10 20 50 1000.1 0.2 0.5 3.0 300.3

IC, COLLECTOR CURRENT (mA)

Figure 5. Temperature Coefficients

100

70 50

C, CAPACITANCE (pF)

7.0

5.0

3.0

30 V

3.0 k

out

1N914

2.0

1.0

0.2 0.5 1.0 2.0 5.0 10 20

0.3 0.7 3.0 7.0

VR, REVERSE VOLTAGE (VOLTS)

ibo

TJ = 25°C

obo

Figure 6. Switching Time Test Circuit

1000

500

300

200

tr @ VCC = 30 V

100

t, TIME (ns)

td @ V

VCC = 120 V

EB(off)

= 1.0 V

0.3 1.0 10 20 30 50

0.50.2

2.0 100 200

3.0 5.0

IC, COLLECTOR CURRENT (mA)

Figure 8. Turn−On Time

IC/IB = 10 TJ = 25°C

tr @ VCC = 120 V

5000

3000

2000

1000

500

t, TIME (ns)

300

200

100

http://onsemi.com

Figure 7. Capacitances

tf @ VCC = 120 V

tf @ VCC = 30 V

ts @ VCC = 120 V

0.3 1.0 10 20 30 500.50.2 2.0 100 2003.0 5.0

IC, COLLECTOR CURRENT (mA)

Figure 9. Turn−Off Time

IC/IB = 10 TJ = 25°C

Page 5

2N5550, 2N5551

ORDERING INFORMATION

Device Package Shipping

2N5550G TO−92

(Pb−Free)

2N5550RLRPG TO−92

(Pb−Free)

2N5551G TO−92

(Pb−Free)

2N5551RL1G TO−92

(Pb−Free)

2N5551RLRAG TO−92

(Pb−Free)

2N5551RLRPG TO−92

(Pb−Free)

2N55551ZL1G TO−92

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

5000 Units / Bulk

2000 / Tape & Ammo Box

5000 Units / Bulk

2000 / Tape & Reel

2000 / Tape & Ammo Box

†

http://onsemi.com

Page 6

2N5550, 2N5551

TO−92 (TO−226)

PACKAGE DIMENSIONS

CASE 29−11

ISSUE AM

SEATING PLANE

STRAIGHT LEAD

BULK PACK

SECTION X−X

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.

DIM MIN MAX MIN MAX

A 0.175 0.205 4.45 5.20 B 0.170 0.210 4.32 5.33 C 0.125 0.165 3.18 4.19 D 0.016 0.021 0.407 0.533 G 0.045 0.055 1.15 1.39 H 0.095 0.105 2.42 2.66 J 0.015 0.020 0.39 0.50 K 0.500 −−− 12.70 −−− L 0.250 −−− 6.35 −−− N 0.080 0.105 2.04 2.66 P −−− 0.100 −−− 2.54 R 0.115 −−− 2.93 −−− V 0.135 −−− 3.43 −−−

MILLIMETERSINCHES

BENT LEAD

TAPE & REEL

AMMO PACK

SECTION X−X

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.

MILLIMETERS

DIM MIN MAX

A 4.45 5.20 B 4.32 5.33 C 3.18 4.19 D 0.40 0.54 G 2.40 2.80 J 0.39 0.50 K 12.70 −−− N 2.04 2.66 P 1.50 4.00 R 2.93 −−− V 3.43 −−−

STYLE 1:

PIN 1. EMITTER

2. BASE

3. COLLECTOR

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5773−3850

http://onsemi.com

ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit

For additional information, please contact your local Sales Representative

2N5550/D