
INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor 2N5495
DESCRIPTION
·Collector-Emitter Sustaining Voltage : V
CEO(SUS)
·Low Saturation Voltage: V
CE (sat)
APPLICATIONS
·Designed for a wide variety of medium-power switching and
amplifier applications , such as series and shunt regulators
and driver and output stages of high-fidelity amplifiers.
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER VALUE UNIT
= 40V(Min)
= 1V(Max)@IC= 3A
=25℃)
a
V
V
V
V
V
P
T
CBO
CEV
CER
CEO
EBO
I
C
I
B
C
T
J
stg
Collector-Base Voltage 60 V
Collector-Emitter Voltage
= -1.5V
V
BE
Collector-Emitter Voltage
RBE= 100Ω
Collector-Emitter Voltage 40 V
Emitter-Base Voltage 5 V
Collector Current-Continuous 7 A
B Base Current 3 A
Collector Power Dissipation
@ T
=25℃
a
Collector Power Dissipation
@ TC=25℃
Junction Temperature 150
Storage Temperature Range -65~150
60 V
50 V
1.8
50
THERMAL CHARACTERISTICS
W
℃
℃
SYMBOL PARAMETER MAX UNIT
R
th j-c
Rth j-a Thermal Resistance, Junction to Ambient 70
Thermal Resistance, Junction to Case 2.5
℃/W
℃/W
isc Website:www.iscsemi.cn

INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor 2N5495
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
V
CEO(SUS)
V
CER(SUS)
V
CEV(SUS)
V
CE
V
BE(on)
I
CEV
I
CER
I
EBO
h
f
(sat)
FE
T
Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0 40 V
Collector-Emitter Sustaining Voltage IC= 100mA ; RBE= 100Ω 50 V
Collector-Emitter Sustaining Voltage IC= 100mA ; VBE= -1.5V 60 V
Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A B 1.0 V
Base-Emitter On Voltage IC= 3A ; VCE= 4V 1.5 V
Collector Cutoff Current
Collector Cutoff Current
= 55V; VBE= -1.5V
CE
= 55V; VBE= -1.5V;TC= 125℃
V
CE
= 40V; RBE= 100Ω
V
CE
VCE= 40V; RBE= 100Ω; TC= 125℃
1.0
5.0
0.5
3.5
mA
mA
V
Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA
DC Current Gain IC= 3A ; VCE= 4V 20 100
Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 4V 0.8 MHz
Switching Times
t
on
t
off
Turn-On Time 5 μs
I
= 3A; IB1= -IB2= 0.3A
C
Turn-Off T ime
15 μs
isc Website:www.iscsemi.cn
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