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DESCRIPTIO N
The 2N5415S is a silicon planar epitaxial PNP transistorinJedec TO-39 metalcase, intended for high
vol-tageswitching and linear amplifier applications.
2N5415S
HIGH-VOLTAGE AMPLIFIER
TO-39
INTE RNA L SCHEMA TI C DIAGR AM
ABSOLUTE MA XIMUM RATI NG S
Symbol Parameter Valu e Unit
V
CBO
V
CEO
V
EBO
I
CM
P
T
stg,Tj
tot
Collector-base Voltage (IE= 0) – 200 V
Collector-emitter Voltage (IB= 0) – 200 V
Emitter-base Voltage (IC=0) –4 V
Collector Peak Current – 1 A
Total Power Dissipation at T
at T
Storage and Junction Temperature – 55 to 200 °C
amb
case
≤ 25 °C
≤ 25 °C
1
10
W
W
October 1988
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2N5415S
THERMAL DATA
R
th j-case
R
th j-amb
ELECTRICAL CHARACTERISTICS (T
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
amb
Max
Max
=25°C unless otherwise specified)
17.5
175
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
Collector Cutoff Current
VCB= – 175 V – 50 µA
(IE=0)
V(
V
I
CEO
I
EBO
BR)CEO
CE(sa t)
Collector Cutoff Current
(I
=0)
B
Emitter Cutoff Current
(I
=0)
C
* Collector-emitter
Breakdown Voltage
(I
=0)
B
* Collector-emitter
= – 150 V – 50 µA
V
CE
=–4V –20 µA
V
EB
IC=–2mA –200 V
Saturation Voltage IC= – 50 mA IB= – 5 mA – 2.5 V
V
* Base-Emitter Voltage IC= – 50 mA VCE= – 10 V – 1.5 V
BE
h
* DC Current Gain IC=–50A VCE= – 10 V 30 150
FE
f
T
C
CBO
* Pulsed : pulse duration = 300 µs, duty cycle = 1 %.
Transition Frequency IC=–10mA
f=5MHz
Collector-base
Capacitance IE=0
f=1MHz
VCE=–10V
15 MHz
VCB=–10V
15 pF
°C/W
°C/W
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Page 3
TO39 MECHANICAL DATA
2N5415S
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 12.7 0.500
B 0.49 0.019
D 6.6 0.260
E 8.5 0.334
F 9.4 0.370
G 5.08 0.200
H 1.2 0.047
I 0.9 0.035
o
L45
(typ.)
I
H
G
F
L
DA
E
B
P008B
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2N5415S
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwiseunder anypatent or patent rights of SGS-THOMSON Microelectronics.Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproducts arenot authorizedforuse as criticalcomponentsin life supportdevices or systems withoutexpress
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All RightsReserved
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