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■ SGS-THOMS O N PREF ERRE D SA LES TYP E S
■ PNP TRANS IS T OR
DESCRIPTION
The 2N5415, 2N5416 are high voltage silicon
epitaxial planar PNP transistors in Jedec TO-39
metal case designed for use in consumer and
industrial line-operated applications.
These devices are particularly suited as drivers in
high-voltage low current inverters, switching and
series regulators.
2N5415
2N5416
SILICON PNP TRANSISTORS
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
2N5415 2N5416
V
V
V
P
P
T
Collector-Base Voltage (IE = 0) -200 -350 V
CBO
Collector-Emitter Voltage (IB = 0) -200 -300 V
CEO
Emitter-Base Voltage (IC = 0) -4 -6 V
EBO
Collector Current -1 A
I
C
I
Base Current -0.5 A
B
Total Dissipation at Tc ≤ 25 oC10W
tot
Total Dissipation at T
tot
Storage Temperature -65 to 200
stg
T
Max. Operating Junction Temperature 200
j
≤ 50 oC1W
amb
o
C
o
C
June 1997
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2N5415 / 2N5416
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
17.5
175
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
I
CBO
I
CEO
I
EBO
CER
Collector Cut-off
Current (I
= 0)
E
Collector Cut-off
Current (I
= 0)
B
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
for 2N5415 V
for 2N5416 V
= -150 V -50 µA
V
CE
for 2N5415 V
for 2N5416 V
= -175 V
CB
= -280 V
CB
= -4 V
EB
= -6 V
EB
-50
-50
-20
-20
IC = -50 mA RBE = 50Ω for 2N5416 -350 V
Sustaining Voltage
V
CEO(sus)
V
CE(sat)
∗ Collector-Emitter
Sustaining Voltage
∗ Collector-Emitter
IC = -10 mA
for 2N5415
for 2N5416
-200
-300
IC = -50 mA IB = -5 mA -2.5 V
Saturation Voltage
∗ Base-Emitter Voltage IC = -50 mA VCE = -10 V -1.5 V
V
BE
h
∗ DC Current Gain IC = -50 mA VCE = -10 V
FE
h
Small Signal Current
fe
for 2N5415
for 2N5416
30
30
IC = -5 mA VCE = -10 V f = 1KHz 25
150
120
Gain
f
C
CBO
Transition frequency IC = -10 mA VCE = -10 V f = 5MHz 15 MHz
T
Collector Base
IE = 0 VCB = -10 V f = 1MHz 25 pF
Capacitance
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
µA
µA
µA
µA
V
V
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TO-39 MECHANICAL DATA
2N5415 / 2N5416
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 12.7 0.500
B0.490.019
D6.60.260
E8.50.334
F9.40.370
G 5.08 0.200
H1.20.047
I0.90.035
L45
mm inch
o
(typ.)
H
G
D A
I
E
F
L
B
P008B
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2N5415 / 2N5416
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or ot h erwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifi cations mentioned
in this publication are subject to change without notice. This publication sup ersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
SGS-THOMSON Microelectronics GROUP OF COMPANIES
. . .
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