Datasheet 2N5302-D Datasheet (ON Semiconductor)

Page 1
2N5302
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High−Power NPN Silicon Transistor
High−power NPN silicon transistors are for use in power amplifier
Features
Low Collector−Emitter Saturation Voltage −
V
= 0.75 Vdc (Max) @ IC = 10 Adc
CE(sat)
Pb−Free Package is Available*
MAXIMUM RATINGS (Note 1) (T
Rating
Collector−Emitter Voltage Collector−Base Voltage Collector Current − Continuous (Note 2) Base Current Total Device Dissipation @ TC = 25_C
ООООООООО
Derate above 25_C Operating and Storage Junction
Temperature Range
ООООООООО
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case Thermal Resistance, Case−to−Ambient
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC Registered Data.
2. Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.
= 25°C unless otherwise noted)
J
Symbol
V
CEO
V
CB
I
C
I
B
P
D
ÎÎ
TJ, T
ÎÎ
Symbol
q
JC
q
CA
stg
Value
60 60 30
7.5
200
ÎÎ
1.14
–65 to +200
ÎÎ
Max
0.875 34
Unit
Î
W/_C
Î
Unit
_C/W _C/W
Vdc Vdc Adc Adc
W
_C
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30 AMPERES
POWER TRANSISTOR
NPN SILICON
60 VOLTS, 200 WATTS
TO−204AA (TO−3)
CASE 1−07
STYLE 1
MARKING DIAGRAM
T
T
C
A
200
8.0
150
6.0
4.0
2.0
, POWER DISSIPATION (WATTS)
D
P
100
50
0
0
0 20 40 60 80 100 120 140 160 180 200
T
C
T
A
TEMPERATURE (°C)
Figure 1. Power Temperature Derating Curve
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
March, 2006− Rev. 2
2N5302G
AYYWW
MEX
2N5302 = Device Code G = Pb−Free Package A = Location Code YY = Year WW = Work Week MEX = Country of Origin
ORDERING INFORMATION
Device Package Shipping
2N5302 TO−204 100 Units/Tray 2N5302G TO−204
(Pb−Free)
1 Publication Order Number:
100 Units/Tray
2N5302/D
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2N5302
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ELECTRICAL CHARACTERISTICS (T
= 25_C unless otherwise noted)
C
Characteristic
OFF CHARACTERISTICS (Note 3)
Collector−Emitter Sustaining Voltage (Note 4)
(IC = 200 mAdc, IB = 0)
ООООООООООООООООООО
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
Collector Cutoff Current
ООООООООООООООООООО
(VCE = 60 Vdc, V
EB(off)
= 1.5 Vdc)
Collector Cutoff Current
(VCE = 60 Vdc, V
ООООООООООООООООООО
= 1.5 Vdc, TC = 150_C)
EB(off)
Collector Cutoff Current
(VCB = 80 Vdc, IE = 0)
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS
DC Current Gain (Note 4)
*(IC = 1.0 Adc, VCE = 2.0 Vdc)
ООООООООООООООООООО
*(IC = 15 Adc, VCE = 2.0 Vdc)
*(IC = 30 Adc, VCE = 4.0 Vdc)
ООООООООООООООООООО
*Collector−Emitter Saturation Voltage (Note 4)
(IC = 10 Adc, IB = 1.0 Adc)
ООООООООООООООООООО
(IC = 20 Adc, IB = 2.0 Adc)2 (IC = 30 Adc, IB = 6.0 Adc)
ООООООООООООООООООО
*Base Emitter Saturation Voltage (Note 4)
(IC = 10 Adc, IB = 1.0 Adc)
ООООООООООООООООООО
(IC = 15 Adc, IB = 1.5 Adc) (IC = 20 Adc, IB = 2.0 Adc)
ООООООООООООООООООО
*Base−Emitter On Voltage (Note 4)
(IC = 15 Adc, VCE = 2.0 Vdc) (IC = 30 Adc, VCE = 4.0 Vdc)
ООООООООООООООООООО
DYNAMIC CHARACTERISTICS (Note 3)
Current−Gain − Bandwidth Product (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz) Small−Signal Current Gain (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 kHz)
SWITCHING CHARACTERISTICS (Note 3)
Rise Time Storage Time Fall Time
(VCC = 30 Vdc, IC = 10 Adc, IB1 = IB2 = 1.0 Adc)
ООООООООООООООО
ООООООООООООООО
3. Indicates JEDEC Registered Data.
4. Pulse Width v 300 ms, Duty Cycle v 2.0%.
Symbol
V
CEO(sus)
ÎÎÎ
I
CEO
I
CEX
ÎÎÎ
I
CEX
ÎÎÎ
I
CBO
I
EBO
h
FE
ÎÎÎ
ÎÎÎ
V
CE(sat)
ÎÎÎ
ÎÎÎ
V
BE(sat)
ÎÎÎ
ÎÎÎ
V
BE(on)
ÎÎÎ
f
T
h
fe
t
r
t
s
t
f
Min
60
ÎÎ
ÎÎ
ÎÎ
40
ÎÎ
15
ÎÎ
5.0
ÎÎ
ÎÎ
ÎÎ
ÎÎ
ÎÎ
2.0 40
Max
Unit
Vdc
Î
ÎÎ
mAdc
5.0 mAdc
Î
1.0
ÎÎ
mAdc
10
Î
ÎÎ
mAdc
1.0
5.0
mAdc
Î
Î
60
ÎÎ
ÎÎ
− Vdc
0.75
Î
Î
2.0
3.0
ÎÎ
ÎÎ
Vdc
1.7
Î
Î
1.8
2.5
ÎÎ
ÎÎ
Vdc
1.7
3.0
Î
ÎÎ
1.0
2.0
1.0
MHz
ms ms ms
+11 V
−2.0 V
INPUT PULSE tr 20 ns PW = 10 to 100 ms DUTY CYCLE = 2.0%
Figure 2. Turn−On time
SWITCHING TIME EQUIVALENT TEST CIRCUITS
V
CC
+30 V
3.0
10
TO
SCOPE
tr 20 ns
+11 V
−9.0 V
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2
INPUT PULSE tr 20 ns PW = 10 to 100 ms DUTY CYCLE = 2.0%
0
10
D
VBB = 7.0 V
Figure 3. Turn−Off time
V
CC
+30 V
3.0
TO
SCOPE
tr 20 ns
Page 3
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
THERMAL RESISTANCE
0.03
0.02
r(t), NORMALIZED EFFECTIVE TRANSIENT
0.01
0.02
2N5302
D = 0.5
0.2
0.1
qJC(t) = r(t) q qJC = 0.875°C/W MAX
D CURVES APPLY FOR POWER PULSE TRAIN SHOWN
0.01
0.05
0.02
READ TIME AT t T
SINGLE PULSE
0.03
0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 2000500
J(pk)
− TC = P
JC
(pk) qJC
1
(t)
t, TIME (ms)
Figure 4. Thermal Response
P
(pk)
t
1
t
2
DUTY CYCLE, D = t1/t
2
1000
100
50
20
10
5.0
2.0
1.0
0.5
, COLLECTOR CURRENT (AMP)
C
I
0.2
0.1
1.0
5302
TJ = 200°C Secondary Breakdown Limited Bonding Wire Limited Thermal Limitations Pulse Duty Cycle 10%
2.0 3.0 5.0 10 20 30 100
5.0 ms
1.0 ms
TC = 25°C
2N5302
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 5. Active−Region Safe Operating Area
5.0
3.0
2.0
1.0
0.7
0.5
t, TIME (s)μ
0.3
0.2
0.1
0.07
0.05
0.03
td @ VOB = 2.0 V
0.05 0.1 0.2 0.5 2.0 3.0 30
0.3 5.0 10 20
IC, COLLECTOR CURRENT (AMP)
tr @ VCC = 30 V
tr @ VCC = 10 V
1.0
100 ms
dc
TJ = 25°C IC/IB = 10
3000
2000
TJ = 25°C
1000
C
ib
500
C
ob
C, CAPACITANCE (pF)
300
200
50
100
0.5
5.0 7.0 20 30 50101.0 2.0 3.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Capacitance versus Voltage
3.0
ts′
1.0
0.7
0.5
t, TIME (s)μ
tf @ VCC = 30 V
0.3 tf @ VCC = 10 V
0.1
0.03
0.05 0.1 0.5 1.0 3.0 30
0.3 5.0 10
IC, COLLECTOR CURRENT (AMP)
TJ = 25°C IB1 = I
B2
IC/IB = 10 ts′ ≈ ts − 1/8 t
f
Figure 7. Turn−On Time
Figure 8. Turn−Off Time
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Page 4
2N5302
300
200
100
TJ = 175°C
25°C
70
50
, DC CURRENT GAIN
FE
h
30
−55 °C
20
10
0.03
0.05 0.1 0.3 0.5 1.0 3.0 5.0 10 30
IC, COLLECTOR CURRENT (AMP)
Figure 9. DC Current Gain
8
10
7
10
IC = 10 x I
6
10
5
10
IC I
4
10
3
10
TYPICAL I
CES
CES
VALUES OBTAINED
CES
FROM FIGURE 13
, EXTERNAL BASE−EMITTER RESISTANCE (OHMS)
2
10
BE
0
R
20 40 60 80 100 120 140 160 200
TJ, JUNCTION TEMPERATURE (°C)
Figure 11. Effects of Base−Emitter Resistance
VCE = 10 V VCE = 2.0 V
VCE = 30 V
IC = 2 x I
CES
180
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
V
V, VOLTAGE (VOLTS)
2.0
1.6 IC = 2.0 A
5.0 A
10 A
20 A
1.2
0.8
0.4
CE
0
0.01
0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10
IB, BASE CURRENT (AMP)
Figure 10. Collector Saturation Region
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.03
0.05 0.1 0.3 0.5 1.0 3.0 5.0 10 30
V
BE(sat)
V
V
CE(sat)
BE(on)
@ IC/IB = 10
@ VCE = 2.0 V
@ IC/IB = 10
IC, COLLECTOR CURRENT (AMP)
Figure 12. “On” Voltages
TJ = 25°C
TJ = 25°C
3
10
VCE = 30 V
2
10
TJ = 175°C
100°C
1
10
25°C
0
10
−1
10
, COLLECTOR CURRENT (A)μI
− 2
10
C
− 3
10
−0.4
IC = I
CES
REVERSE FORWARD
−0.3 −0.2 −0.1 0 0.1 0.2 0.3 0.4 0.5 0.6
VBE, BASE−EMITTER VOLTAGE (VOLTS)
Figure 13. Collector Cut−Off Region
+2.5
+2.0
+1.5
+1.0
+0.5
*APPLIES FOR IC/IB <
0
TJ = −55°C to +175°C
*qVC for V
CE(sat)
h
@V
CE
+2.0V
FE
2
−0.5
−1.0
−1.5
−2.0
, TEMPERATURE COEFFICIENTS (mV/C)°θ
V
−2.5
0.03
0.05 0.1 0.3 0.5 1.0 3.0 5.0 10 30
qVB for V
BE(sat)
IC, COLLECTOR CURRENT (AMP)
Figure 14. Temperature Coefficients
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Page 5
2N5302
PACKAGE DIMENSIONS
TO−204 (TO−3)
CASE 1−07
ISSUE Z
A
N
C
E
2 PLD
0.13 (0.005) Y
U
V
H
L
2
1
G
K
M
−Y−
−T−
B
T
SEATING PLANE
M
Q
M
−Q−
0.13 (0.005) T
M
M
Y
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO−204AA OUTLINE SHALL APPLY.
DIM MIN MAX MIN MAX
A 1.550 REF 39.37 REF B −−− 1.050 −−− 26.67 C 0.250 0.335 6.35 8.51 D 0.038 0.043 0.97 1.09 E 0.055 0.070 1.40 1.77 G 0.430 BSC 10.92 BSC H 0.215 BSC 5.46 BSC K 0.440 0.480 11.18 12.19
L 0.665 BSC 16.89 BSC N −−− 0.830 −−− 21.08 Q 0.151 0.165 3.84 4.19 U 1.187 BSC 30.15 BSC V 0.131 0.188 3.33 4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
MILLIMETERSINCHES
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2N5302/D
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