Datasheet 2N5302-D Datasheet (ON Semiconductor)

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Page 1

2N5302

High−Power NPN Silicon Transistor

High−power NPN silicon transistors are for use in power amplifier

and switching circuits applications.

Features

• Low Collector−Emitter Saturation Voltage −

= 0.75 Vdc (Max) @ IC = 10 Adc

CE(sat)

• Pb−Free Package is Available*

MAXIMUM RATINGS (Note 1) (T

Rating

Collector−Emitter Voltage Collector−Base Voltage Collector Current − Continuous (Note 2) Base Current Total Device Dissipation @ TC = 25_C

ООООООООО

Derate above 25_C Operating and Storage Junction

Temperature Range

ООООООООО

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction−to−Case Thermal Resistance, Case−to−Ambient

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Indicates JEDEC Registered Data.

2. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

= 25°C unless otherwise noted)

Symbol

CEO

ÎÎ

TJ, T

ÎÎ

Symbol

stg

Value

60 60 30

7.5

200

ÎÎ

1.14

–65 to +200

ÎÎ

Max

0.875 34

Unit

W/_C

Unit

_C/W _C/W

Vdc Vdc Adc Adc

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30 AMPERES

POWER TRANSISTOR

NPN SILICON

60 VOLTS, 200 WATTS

TO−204AA (TO−3)

CASE 1−07

STYLE 1

MARKING DIAGRAM

200

8.0

150

6.0

4.0

2.0

, POWER DISSIPATION (WATTS)

100

0 20 40 60 80 100 120 140 160 180 200

TEMPERATURE (°C)

Figure 1. Power Temperature Derating Curve

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

March, 2006− Rev. 2

2N5302G

AYYWW

MEX

2N5302 = Device Code G = Pb−Free Package A = Location Code YY = Year WW = Work Week MEX = Country of Origin

ORDERING INFORMATION

Device Package Shipping

2N5302 TO−204 100 Units/Tray 2N5302G TO−204

(Pb−Free)

1 Publication Order Number:

100 Units/Tray

2N5302/D

Page 2

2N5302

ELECTRICAL CHARACTERISTICS (T

= 25_C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS (Note 3)

Collector−Emitter Sustaining Voltage (Note 4)

(IC = 200 mAdc, IB = 0)

ООООООООООООООООООО

Collector Cutoff Current

(VCE = 60 Vdc, IB = 0)

Collector Cutoff Current

ООООООООООООООООООО

(VCE = 60 Vdc, V

EB(off)

= 1.5 Vdc)

Collector Cutoff Current

(VCE = 60 Vdc, V

ООООООООООООООООООО

= 1.5 Vdc, TC = 150_C)

EB(off)

Collector Cutoff Current

(VCB = 80 Vdc, IE = 0)

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

ON CHARACTERISTICS

DC Current Gain (Note 4)

*(IC = 1.0 Adc, VCE = 2.0 Vdc)

ООООООООООООООООООО

*(IC = 15 Adc, VCE = 2.0 Vdc)

*(IC = 30 Adc, VCE = 4.0 Vdc)

ООООООООООООООООООО

*Collector−Emitter Saturation Voltage (Note 4)

(IC = 10 Adc, IB = 1.0 Adc)

ООООООООООООООООООО

(IC = 20 Adc, IB = 2.0 Adc)2 (IC = 30 Adc, IB = 6.0 Adc)

ООООООООООООООООООО

*Base Emitter Saturation Voltage (Note 4)

(IC = 10 Adc, IB = 1.0 Adc)

ООООООООООООООООООО

(IC = 15 Adc, IB = 1.5 Adc) (IC = 20 Adc, IB = 2.0 Adc)

ООООООООООООООООООО

*Base−Emitter On Voltage (Note 4)

(IC = 15 Adc, VCE = 2.0 Vdc) (IC = 30 Adc, VCE = 4.0 Vdc)

ООООООООООООООООООО

DYNAMIC CHARACTERISTICS (Note 3)

Current−Gain − Bandwidth Product (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz) Small−Signal Current Gain (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 kHz)

SWITCHING CHARACTERISTICS (Note 3)

Rise Time Storage Time Fall Time

(VCC = 30 Vdc, IC = 10 Adc, IB1 = IB2 = 1.0 Adc)

ООООООООООООООО

3. Indicates JEDEC Registered Data.

4. Pulse Width v 300 ms, Duty Cycle v 2.0%.

Symbol

CEO(sus)

ÎÎÎ

CEO

CEX

ÎÎÎ

CEX

ÎÎÎ

CBO

EBO

ÎÎÎ

CE(sat)

ÎÎÎ

BE(sat)

ÎÎÎ

BE(on)

ÎÎÎ

Min

ÎÎ

−

ÎÎ

−

ÎÎ

−

ÎÎ

5.0

−

ÎÎ

−

ÎÎ

−

ÎÎ

−

ÎÎ

−

ÎÎ

2.0 40

Max

Unit

Vdc

−

ÎÎ

mAdc

5.0 mAdc

1.0

ÎÎ

mAdc

ÎÎ

mAdc

1.0

5.0

mAdc

−

ÎÎ

− Vdc

0.75

2.0

3.0

ÎÎ

Vdc

1.7

1.8

2.5

ÎÎ

Vdc

1.7

3.0

−

ÎÎ

−

1.0

2.0

1.0

MHz

−

ms ms ms

+11 V

−2.0 V

INPUT PULSE tr ≤ 20 ns PW = 10 to 100 ms DUTY CYCLE = 2.0%

Figure 2. Turn−On time

SWITCHING TIME EQUIVALENT TEST CIRCUITS

+30 V

3.0

SCOPE

tr ≤ 20 ns

+11 V

−9.0 V

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INPUT PULSE tr ≤ 20 ns PW = 10 to 100 ms DUTY CYCLE = 2.0%

VBB = 7.0 V

Figure 3. Turn−Off time

+30 V

3.0

SCOPE

tr ≤ 20 ns

Page 3

1.0

0.7

0.5

0.3

0.2

0.1

0.07

0.05

THERMAL RESISTANCE

0.03

0.02

r(t), NORMALIZED EFFECTIVE TRANSIENT

0.01

0.02

2N5302

D = 0.5

0.2

0.1

qJC(t) = r(t) q qJC = 0.875°C/W MAX

D CURVES APPLY FOR POWER PULSE TRAIN SHOWN

0.01

0.05

0.02

READ TIME AT t T

SINGLE PULSE

0.03

0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 2000500

J(pk)

− TC = P

(pk) qJC

(t)

t, TIME (ms)

Figure 4. Thermal Response

(pk)

DUTY CYCLE, D = t1/t

1000

100

5.0

2.0

1.0

0.5

, COLLECTOR CURRENT (AMP)

0.2

0.1

1.0

5302

TJ = 200°C Secondary Breakdown Limited Bonding Wire Limited Thermal Limitations Pulse Duty Cycle ≤ 10%

2.0 3.0 5.0 10 20 30 100

5.0 ms

1.0 ms

TC = 25°C

2N5302

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

Figure 5. Active−Region Safe Operating Area

5.0

3.0

2.0

1.0

0.7

0.5

t, TIME (s)μ

0.3

0.2

0.1

0.07

0.05

0.03

td @ VOB = 2.0 V

0.05 0.1 0.2 0.5 2.0 3.0 30

0.3 5.0 10 20

IC, COLLECTOR CURRENT (AMP)

tr @ VCC = 30 V

tr @ VCC = 10 V

1.0

100 ms

TJ = 25°C IC/IB = 10

3000

2000

TJ = 25°C

1000

500

C, CAPACITANCE (pF)

300

200

100

0.5

5.0 7.0 20 30 50101.0 2.0 3.0

VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Capacitance versus Voltage

3.0

ts′

1.0

0.7

0.5

t, TIME (s)μ

tf @ VCC = 30 V

0.3 tf @ VCC = 10 V

0.1

0.03

0.05 0.1 0.5 1.0 3.0 30

0.3 5.0 10

IC, COLLECTOR CURRENT (AMP)

TJ = 25°C IB1 = I

IC/IB = 10 ts′ ≈ ts − 1/8 t

Figure 7. Turn−On Time

Figure 8. Turn−Off Time

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Page 4

2N5302

300

200

100

TJ = 175°C

25°C

, DC CURRENT GAIN

−55 °C

0.03

0.05 0.1 0.3 0.5 1.0 3.0 5.0 10 30

IC, COLLECTOR CURRENT (AMP)

Figure 9. DC Current Gain

IC = 10 x I

IC ≈ I

TYPICAL I

CES

VALUES OBTAINED

CES

FROM FIGURE 13

, EXTERNAL BASE−EMITTER RESISTANCE (OHMS)

20 40 60 80 100 120 140 160 200

TJ, JUNCTION TEMPERATURE (°C)

Figure 11. Effects of Base−Emitter Resistance

VCE = 10 V VCE = 2.0 V

VCE = 30 V

IC = 2 x I

CES

180

, COLLECTOR−EMITTER VOLTAGE (VOLTS)

V, VOLTAGE (VOLTS)

2.0

1.6 IC = 2.0 A

5.0 A

10 A

20 A

1.2

0.8

0.4

0.01

0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10

IB, BASE CURRENT (AMP)

Figure 10. Collector Saturation Region

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.03

0.05 0.1 0.3 0.5 1.0 3.0 5.0 10 30

BE(sat)

CE(sat)

BE(on)

@ IC/IB = 10

@ VCE = 2.0 V

@ IC/IB = 10

IC, COLLECTOR CURRENT (AMP)

Figure 12. “On” Voltages

TJ = 25°C

VCE = 30 V

TJ = 175°C

100°C

25°C

−1

, COLLECTOR CURRENT (A)μI

− 2

− 3

−0.4

IC = I

CES

REVERSE FORWARD

−0.3 −0.2 −0.1 0 0.1 0.2 0.3 0.4 0.5 0.6

VBE, BASE−EMITTER VOLTAGE (VOLTS)

Figure 13. Collector Cut−Off Region

+2.5

+2.0

+1.5

+1.0

+0.5

*APPLIES FOR IC/IB <

TJ = −55°C to +175°C

*qVC for V

CE(sat)

@V

CE

+2.0V

FE

−0.5

−1.0

−1.5

−2.0

, TEMPERATURE COEFFICIENTS (mV/C)°θ

−2.5

0.03

0.05 0.1 0.3 0.5 1.0 3.0 5.0 10 30

qVB for V

BE(sat)

IC, COLLECTOR CURRENT (AMP)

Figure 14. Temperature Coefficients

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Page 5

2N5302

PACKAGE DIMENSIONS

TO−204 (TO−3)

CASE 1−07

ISSUE Z

2 PLD

0.13 (0.005) Y

−Y−

−T−

SEATING PLANE

−Q−

0.13 (0.005) T

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO−204AA OUTLINE SHALL APPLY.

DIM MIN MAX MIN MAX

A 1.550 REF 39.37 REF B −−− 1.050 −−− 26.67 C 0.250 0.335 6.35 8.51 D 0.038 0.043 0.97 1.09 E 0.055 0.070 1.40 1.77 G 0.430 BSC 10.92 BSC H 0.215 BSC 5.46 BSC K 0.440 0.480 11.18 12.19

L 0.665 BSC 16.89 BSC N −−− 0.830 −−− 21.08 Q 0.151 0.165 3.84 4.19 U 1.187 BSC 30.15 BSC V 0.131 0.188 3.33 4.77

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

MILLIMETERSINCHES

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2N5302/D