Page 1
MEDIUM POWER PNP SILICON TRANSISTOR
■ SGS-THOMSONPREFERRED SALESTYPE
■ PNP TRANSISTOR
APPLICATIONS
■ LINEARANDSWITCHINGINDUSTRIAL
EQUIPMENT
DESCRIPTION
The 2N5195 is a silicon epitaxial-base PNP
transistorin JedecSOT-32plastic package.
It is inteded for use in medium power linear and
switchingapplications.
The complementaryNPN typeis 2N5192.
SOT-32
2N5195
1
2
3
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Val u e Uni t
V
V
V
I
P
T
Collect or- B as e Vo ltage (IE=0) -80 V
CBO
Collector-Emitter Voltage ( IB=0) -80 V
CEO
Emitter-Base Voltage (IC=0) -5 V
EBO
I
Collect or Curr ent -4 A
C
Collect or Pea k Cur rent -7 A
CM
I
Base Current -1 A
B
Tot al Dissipation at Tc≤ 25oC40W
tot
Storage Temperature -65 to 1 50
stg
T
Max. O perating J unct i on Tem perat u re 150
j
o
C
o
C
June 1997
1/5
Page 2
2N5195
THERMAL DATA
R
thj-case
R
thj-amb
Ther mal Res istan ce Junct io n- case Max
Ther mal Res istan ce Junct io n- ambient Max
3.12
100
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwise specified)
case
Symbol Parameter Test Cond ition s Min. Typ. Max. Unit
I
CBO
I
CEX
I
CEO
I
EBO
V
CEO(sus )
Collector C ut -off
Current (I
E
=0)
Collector C ut -off
Current (V
= -1. 5V )
BE
Collector C ut -off
Current (I
B
=0)
Emit ter Cut - o f f C urr ent
=0)
(I
C
∗ Collector-E mitt er
=ratedV
V
CB
V
=ratedV
CE
VCE=ratedV
V
=ratedV
CE
V
=-5V -1 mA
EB
CBO
CEO
CEOTc
CEO
=125oC
-0.1 mA
-0.1
-2
-1 mA
IC=-100mA -80 V
Sust aining V olt ag e
V
∗ Collector-E m it t er
CE(sat)
Saturation Voltage
V
∗ Base-Emitt er V oltage IC=-1.5A VCE=-2V -1.2 V
BE
h
∗ DC Current G ain IC=-1.5A VCE=-2V
FE
f
∗
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Tr ansition f requency IC=-1A VCE=-10V 2 MHz
T
IC=-1.5A IB= -0.15 A
I
=-4A IB=-1A
C
I
=-4A VCE=-2V
C
20
-0.6
-1.2
80
7
mA
mA
V
V
Safe Operating Area DeratingCurves
2/5
Page 3
2N5195
DCCurrent Gain
Base-EmitterSaturation Voltage
Collector-EmitterSaturation Voltage
3/5
Page 4
2N5195
SOT-32(TO-126)MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 7.4 7.8 0.291 0.307
B 10.5 10.8 0.413 0.445
b 0.7 0.9 0.028 0.035
b1 0.49 0.75 0.019 0.030
C 2.4 2.7 0.040 0.106
c1 1.0 1.3 0.039 0.050
D 15.4 16.0 0.606 0.629
e 2.2 0.087
e3 4.15 4.65 0.163 0.183
F 3.8 0.150
G 3 3.2 0.118 0.126
H 2.54 0.100
H2 2.15 0.084
mm inch
4/5
H2
0016114
Page 5
2N5195
Informationfurnished is believed to be accurate and reliable.However, SGS-THOMSON Microelectronicsassumes no responsabilityfor the
consequencesof use of such information nor for any infringementof patents or other rightsof third parties which may results from its use. No
license is granted byimplicationor otherwise under any patentor patentrights of SGS-THOMSONMicroelectronics. Specificationsmentioned
in thispublication are subject to change without notice. This publicationsupersedes and replaces all informationpreviously supplied.
SGS-THOMSON Microelectronicsproducts are notauthorizedfor useascritical componentsin lifesupport devicesor systemswithout express
written approvalof SGS-THOMSONMicroelectonics.
1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
Australia- Brazil - Canada- China- France- Germany- Hong Kong - Italy- Japan- Korea - Malaysia -Malta - Morocco - The Netherlands-
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - UnitedKingdom - U.S.A
SGS-THOMSON MicroelectronicsGROUP OF COMPANIES
...
5/5
Loading...