MEDIUM POWER NPN SILICON TRANSISTORS
■ SGS-THOMS O N PREF ERRE D SA LES TYP E S
■ NPN TRANSISTOR
APPLICATIONS
■ LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The 2N5191 and 2N5192 are silicon
epitaxial-base NPN transistors in Jedec SOT-32
plastic package.
They are inteded for use in medium power linear
and switching applications.
The complementary PNP type of 2N5192 is
2N5195.
SOT-32
2N5191
2N5192
1
2
3
INTERNAL SCHEMATIC DIAGRAM
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
2N5191 2N5192 Unit
V
V
V
I
P
T
Collector-Base Voltage (IE = 0) 60 80 V
CBO
Collector-Emitter Voltage (IB = 0) 60 80 V
CEO
Emitter-Base Voltage (IC = 0) 5 V
EBO
Collector Current 4 A
I
C
Collector Peak Current 7 A
CM
Base Current 1 A
I
B
Total Dissipation at Tc ≤ 25 oC40W
tot
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
o
C
o
C
June 1997
1/4
2N5191 / 2N5192
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
3.12
100
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
I
CEX
I
CEO
I
EBO
V
CEO(sus)
V
CE(sat)
V
BE
Collector Cut-off
Current (I
= 0)
E
Collector Cut-off
Current (V
= -1.5V)
BE
Collector Cut-off
Current (I
= 0)
B
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
Sustaining Voltage
∗ Collector-Emitter
Saturation Voltage
= rated V
V
CB
= rated V
V
CE
VCE = rated V
= rated V
V
CE
= 5 V 1 mA
V
EB
CBO
CEO
Tc = 125 oC
CEO
CEO
0.1 mA
0.1
2
1mA
IC = 100 mA
for 2N5191
for 2N5192
IC = 1.5 A IB = 0.15 A
I
= 4 A IB = 1 A
C
60
80
0.6
1.4
∗ Base-Emitter Voltage IC = 1.5 A VCE = 2 V 1.2 V
hFE∗ DC Current Gain IC = 1.5 A VCE = 2 V
for 2N5191
for 2N5192
I
for 2N5191
for 2N5192
f
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Transition frequency IC = 1 A VCE = 10 V 2 MHz
T
= 4 A VCE = 2 V
C
25
20
10
7
100
80
mA
mA
V
V
V
V
2/4
0016114
SOT-32 (TO-126) MECHANICAL DATA
2N5191 / 2N5192
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 7.4 7.8 0.291 0.307
B 10.5 10.8 0.413 0.445
b 0.7 0.9 0.028 0.035
b1 0.49 0.75 0.019 0.030
C 2.4 2.7 0.040 0.106
c1 1.0 1.3 0.039 0.050
D 15.4 16.0 0.606 0.629
e2.2 0.087
e3 4.15 4.65 0.163 0.183
F3.8 0.150
G 3 3.2 0.118 0.126
H2.540.100
H2 2.15 0.084
mm inch
H2
3/4
2N5191 / 2N5192
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or ot h erwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifi cations mentioned
in this publication are subject to change without notice. This publication sup ersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
SGS-THOMSON Microelectronics GROUP OF COMPANIES
. . .
4/4
Loading...