2N5172
2N5172
B
C
E
TO-92
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 300 mA. Sourced
from Process 10. See PN100 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Collector-Emitter Voltage 25 V
Collector-Base Voltage 25 V
Emitter-Base Voltage 5.0 V
Collector Current - Continuous 500 mA
Operating and Storage Junction Temperature Range -55 to +150
°
C
Symbol Characteristic Max Units
2N5172
P
D
R
θ
JC
R
θ
JA
1997 Fairchild Semiconductor Corporation
Total Device Dissipa tion
Derate above 25°C
Ther mal Resistance, Junction to Case 83.3
Thermal Resistan ce, Junction to Ambient 200
625
5.0
mW
mW/°C
C/W
°
C/W
°
NPN General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
ON CHARACTERISTICS*
h
FE
V
sat
CE(
V
BE(on)
SMALL SIGNAL CHARACTERISTICS
C
cb
h
fe
Collector-Emitte r Breakdown Voltage* IC = 10 mA, IB = 025V
Collector-Base Breakdown Voltag e
Emitter-Base Breakdown Voltage
I
= 10 µA, IE = 0
C
I
= 10 µA, IC = 0
E
25 V
5.0 V
Collector Cutoff Current VCB = 25 V, IE = 0 100 nA
Emitter Cutoff Current VEB = 5.0 V, IC = 0 100 nA
DC Current Gain VCE = 10 V, IC = 10 mA 100 500
Collector-Emitte r Saturation Voltage IC = 10 mA, IB = 1.0 mA 0.25 V
)
Base-Emitter On Voltage VCE = 10 V, IC = 10 mA 0.5 1.2 V
Collector- B ase Capacitance VCB = 10 V, f = 1.0 MHz 1.6 10 pF
Small-Si gnal Current Gain IC = 10 mA, VCE = 10 V,
100 750
f = 1.0 kHz
2N5172
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
Formative or
In Design
First Production
Full Production
Not In Production
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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