Datasheet 2N5088G Specification

2N5088, 2N5089

s

Brochure, BRD8011/D.

Amplifier Transistors

NPN Silicon

Features

• Pb−Free Packages are Available*

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3 COLLECTOR

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector − Emitter Voltage

2N5088
2N5089

Collector − Base Voltage

2N5088

2N5089
Emitter − Base Voltage V
Collector Current − Continuous I
Total Device Dissipation @ TA = 25°C

Derate above 25°C
Total Device Dissipation @ TC = 25°C

Derate above 25°C
Operating and Storage Junction

Temperature Range

V

CEO

V

CBO

EBO

P

P

TJ, T

C

D

D

−55 to +150 °C

stg

30
25

35
30

3.0 Vdc
50 mAdc

625

5.0

1.5
12

Vdc

Vdc

mW

mW/°C

W

mW/°C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Ambient
(Note 1)

Thermal Resistance, Junction−to−Case

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

1. R

is measured with the device soldered into a typical printed circuit board.

q

JA

R

q

JA

R

q

JC

200 °C/W

83.3 °C/W

2

BASE

1 EMITTER

TO−92
CASE 29
STYLE 1

1

2

3

STRAIGHT LEAD

BULK PACK

1

2

BENT LEAD

TAPE & REEL

AMMO PACK

MARKING DIAGRAM

2N

508x

AYWW G

G

x = 8 or 9
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package

(Note: Microdot may be in either location)

3

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2007

March, 2007 − Rev. 4

ORDERING INFORMATION

Device Package Shipping

2N5088G TO−92

2N2088RLRAG TO−92

2N5089G

2N2089RLRE

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification

1 Publication Order Number:

(Pb−Free)

(Pb−Free)

TO−92

(Pb−Free)

TO−92 2000/Tape & Reel

5000 Units/Bulk

2000/Tape & Reel

5000 Units/Bulk

†

2N5088/D

2N5088, 2N5089

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

A

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector− Emitter Breakdown Voltage (Note 2)

(I

= 1.0 mAdc, IB = 0) 2N5088

C

Collector− Base Breakdown Voltage

(IC = 100 mAdc, IE = 0) 2N5088

Collector Cutoff Current

(VCB = 20 Vdc, IE = 0) 2N5088
(VCB = 15 Vdc, IE = 0) 2N5089

Emitter Cutoff Current

(V

= 3.0 Vdc, IC = 0)

EB(off)

(V

= 4.5 Vdc, IC = 0)

EB(off)

ON CHARACTERISTICS

DC Current Gain

(IC = 100 mAdc, VCE = 5.0 Vdc) 2N5088

(IC = 1.0 mAdc, VCE = 5.0 Vdc) 2N5088

(IC = 10 mAdc, VCE = 5.0 Vdc) (Note 2) 2N5088

Collector− Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)

Base− Emitter On Voltage

(IC = 10 mAdc, VCE = 5.0 Vdc) (Note 2)

SMALL− SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 500 mAdc, VCE = 5.0 Vdc, f = 20 MHz)

Collector−Base Capacitance

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)

Emitter−Base Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

Small−Signal Current Gain

(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) 2N5088

Noise Figure

(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz) 2N5088

2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

2N5089

2N5089

2N5089

2N5089

2N5089

2N5089

2N5089

V

(BR)CEO

V

(BR)CBO

I

CBO

I

EBO

h

FE

V

CE(sat)

V

BE(on)

f

C

C

h

NF

30
25

−

−
Vdc

Vdc

35
30

−

−

nAdc

−

−

50
50

nAdc

−

−

50

100

−
300
400

350
450

300
400

900

1200

−

−

−

−

− 0.5 Vdc

− 0.8 Vdc

T

cb

eb

fe

50 − MHz

− 4.0 pF

− 10 pF

350
450

1400
1800

−

dB

−

−

3.0

2.0

R

S

i

n

e

n

IDEAL

TRANSISTOR

Figure 1. Transistor Noise Model

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2

2N5088, 2N5089

NOISE CHARACTERISTICS

(VCE = 5.0 Vdc, TA = 25°C)

NOISE VOLTAGE

30

BANDWIDTH = 1.0 Hz

20

IC = 10 mA

RS ≈ 0

30

BANDWIDTH = 1.0 Hz

20

RS ≈ 0

3.0 mA

1.0 mA

300 mA

10

20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k

f, FREQUENCY (Hz)

, NOISE VOLTAGE (nV)

n

e

10

7.0

5.0

3.0

Figure 2. Effects of Frequency

10

7.0

5.0

3.0

2.0

1.0

0.7

0.5

, NOISE CURRENT (pA)

n

I

0.3

0.2

RS ≈ 0

0.1
10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k

10 mA

f, FREQUENCY (Hz)

BANDWIDTH = 1.0 Hz

IC = 10 mA

3.0 mA

1.0 mA

300 mA

100 mA

30 mA

10

7.0

, NOISE VOLTAGE (nV)

n

e

5.0

3.0

0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10
IC, COLLECTOR CURRENT (mA)

f = 10 Hz

100 Hz

10 kHz

100 kHz

Figure 3. Effects of Collector Current

20

16

12

8.0

NF, NOISE FIGURE (dB)

4.0

0

10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k

BANDWIDTH = 10 Hz to 15.7 kHz

IC = 1.0 mA

500 mA

100 mA

10 mA

RS, SOURCE RESISTANCE (OHMS)

1.0 kHz

Figure 4. Noise Current

300
200

BANDWIDTH = 1.0 Hz IC = 10 mA

100

70
50

30

20

10

, TOTAL NOISE VOLTAGE (nV)

T

7.0

V

5.0

3.0
10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k

RS, SOURCE RESISTANCE (OHMS)

100 mA

3.0 mA

1.0 mA

300 mA

10 mA

Figure 6. Total Noise Voltage

100 Hz NOISE DATA

20

16

12

30 mA

8.0

NF, NOISE FIGURE (dB)

4.0

0

10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k

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3

Figure 5. Wideband Noise Figure

IC = 10 mA

BANDWIDTH = 1.0 Hz

RS, SOURCE RESISTANCE (OHMS)

Figure 7. Noise Figure

3.0 mA

1.0 mA

300 mA

30 mA

100 mA

10 mA

4.0

3.0

2.0

1.0

0.7

0.5

0.4

0.3

FE

h , DC CURRENT GAIN (NORMALIZED)

0.2

0.01

VCE = 5.0 V

2N5088, 2N5089

TA = 125°C

25°C

−55 °C

0.05 2.0 3.0 100.02 0.03

IC, COLLECTOR CURRENT (mA)

0.50.2 0.3

Figure 8. DC Current Gain

1.00.1 5.0

1.0

0.8

0.6

0.4

V, VOLTAGE (VOLTS)

0.2

0

0.01

8.0

6.0

4.0

3.0

TJ = 25°C

VBE @ VCE = 5.0 V

V

@ IC/IB = 10

CE(sat)

0.02 0.05 0.1 0.2

IC, COLLECTOR CURRENT (mA)

Figure 9. “On” Voltages

C

ob

C

cb

0.5

C

eb

1.0 2.0 5.0

C

ib

10 20 50 100

TJ = 25°C

−0.4

−0.8

−1.2

, BASE−EMITTER

−1.6

VBE

θ

R

−2.0

TEMPERATURE COEFFICIENT (mV/ C)°

−2.4

0.01 0.02 0.05 0.1 0.2

500

300

200

TJ = 25°C to 125°C

−55 °C to 25°C

1.0 2.0 5.0

0.5

IC, COLLECTOR CURRENT (mA)

10 20 50 100

Figure 10. Temperature Coefficients

2.0

C, CAPACITANCE (pF)

1.0

0.8

0.1 0.2

1.0 2.0 5.0

0.5
VR, REVERSE VOLTAGE (VOLTS)

Figure 11. Capacitance

10 20 50 100

http://onsemi.com

100

VCE = 5.0 V

70

TJ = 25°C

50

, CURRENT−GAIN  BANDWIDTH PRODUCT (MHz)

T

f

1.0 2.0 5.03.0 7.0
IC, COLLECTOR CURRENT (mA)

10 20 30 50 70 100

Figure 12. Current−Gain — Bandwidth Product

4

2N5088, 2N5089

TO−92 (TO−226)

PACKAGE DIMENSIONS

CASE 29−11

ISSUE AM

SEATING
PLANE

R

T

SEATING
PLANE

A

B

STRAIGHT LEAD

BULK PACK

R

P

L

K

XX

V

1

G

H

C

N

D

J

SECTION X−X

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.

DIM MIN MAX MIN MAX

A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533
G 0.045 0.055 1.15 1.39
H 0.095 0.105 2.42 2.66
J 0.015 0.020 0.39 0.50
K 0.500 −−− 12.70 −−−
L 0.250 −−− 6.35 −−−
N 0.080 0.105 2.04 2.66
P −−− 0.100 −−− 2.54
R 0.115 −−− 2.93 −−−
V 0.135 −−− 3.43 −−−

MILLIMETERSINCHES

N

A

B

P

K

XX

G

V

1

C

N

BENT LEAD

TAPE & REEL

AMMO PACK

D

J

SECTION X−X

NOTES:

1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.

MILLIMETERS

DIM MIN MAX

A 4.45 5.20
B 4.32 5.33
C 3.18 4.19
D 0.40 0.54
G 2.40 2.80
J 0.39 0.50
K 12.70 −−−
N 2.04 2.66
P 1.50 4.00
R 2.93 −−−
V 3.43 −−−

STYLE 1:

PIN 1. EMITTER

2. BASE

3. COLLECTOR

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2N5088/D

5