Datasheet 2N5088BU Specification

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g

A

2N5088 / MMBT5088 / 2N5089 / MMBT5089

2N5088
2N5089

C

B

E

TO-92

MMBT5088
MMBT5089

C

SOT-23

Mark: 1Q / 1R

B

E

NPN General Purpose Amplifier

This device is designed for low noise, high gain, general purpose
amplifier applications at collector currents from 1µA to 50 mA.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol Parameter Value Units

V

CEO

V

CBO

V

EBO

I

C

TJ, T

st

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Collector-Emitter Voltage
Collector-Base Voltage

Emitter-Base Voltage 4.5 V
Collector Current - Continuous 100 mA
Operating and Stora ge Junction Temperature Range -55 to +150

2N5088
2N5089
2N5088
2N5089

30
25
35
30

V
V
V
V

°

C

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol Characteristic Max Units

2N5088
2N5089

P

D

R

θ

JC

R

θ

J

Total Device Dissipation

Derate above 25°C

Ther mal Resistance, Junction to Case 83.3
Thermal Resistance, Junction to Ambient 200 357

625

5.0

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

 2001 Fairchild Semiconductor Corporation

*MMBT5088
*MMBT5089

350

2.8

2N5088/2N5089/MMBT5088/MMBT5089, Rev A

mW

mW/°C

C/W

°

C/W

°

NPN General Purpose Amplifier

(continued)

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Max Units

OFF CHARACTERISTICS

V

(BR)CEO

V

(BR)CBO

I

CBO

I

EBO

ON CHARACTERISTICS

h

FE

V

CE(

sat

V

BE(on)

Collector-Emitter Breakdown
Voltage*

Collector-Base Breakdown Voltage

Collector Cutoff Current

I

= 1.0 mA, IB = 0 5088

C

I

= 100 µA, IE = 0 5088

C

V

= 20 V, IE = 0 5088

CB

= 15 V, IE = 0

V

CB

5089

5089

5089

30
25

35
30

Emitter Cutoff Current VEB = 3.0 V, IC = 0

V

= 4.5 V, IC = 0

EB

DC Current Gain

I

= 100 µA, VCE = 5.0 V 5088

C

5089

I

= 1.0 mA, VCE = 5.0 V 5088

C

5089

= 10 mA, VCE = 5.0 V* 5088

I

C

5089

Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA 0.5 V

)

300
400
350
450
300
400

Base-Emitt er On Vo ltage IC = 10 mA, VCE = 5.0 V 0.8 V

50
50

50

100

900

1200

V
V

V
V

nA
nA

nA
nA

2N5088 / MMBT5088 / 2N5089 / MMBT5089

SMALL SIGNAL CHARACTERISTICS

f

T

C

cb

C

eb

h

fe

Current Gain - Bandwidth Product
Collector-Base Capacitance VCB = 5.0 V, I

Emitter-Base Capacit anc e VBE = 0.5 V, I
Small-Signal Current Gain

NF Noise Figure

= 500 µA,V

I

C

= 5.0 mA,

CE

f = 20 MHz

= 0, f = 100 kHz 4.0 pF

E

= 0, f = 100 kHz 10 pF

C

I

= 1.0 mA, V

C

= 5.0 V, 5088

CE

f = 1.0 kHz 5089

= 100 µA, VCE = 5.0 V, 5088

I

C

= 10 kΩ, 5089

R

S

f = 10 Hz to 15.7 kHz

50 MHz

350
450

1400
1800

3.0

2.0

*Pulse T est: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

Spice Model

NPN (Is=5.911f Xti=3 Eg=1.11 V af=62.37 Bf=1.122K Ne=1.394 Ise=5.911f Ikf=14.92m Xtb=1.5 Br=1.271 Nc=2
Isc=0 Ikr=0 Rc=1.61 Cjc=4.017p Mjc=.3174 Vjc=.75 Fc=.5 Cje=4.973p Mje=.4146 Vje=.75 Tr=4.673n Tf=821.7p
Itf=.35 Vtf=4 Xtf=7 Rb=10)

3

dB
dB

T ypical Characteristics

2N5088 / MMBT5088 / 2N5089 / MMBT5089

NPN General Purpose Amplifier

(continued)

T ypical Pulsed Curr e n t Ga in

vs Collect or Curre nt

1200

1000

800

600

400

200

0

FE

0.01 0.03 0.1 0.3 1 3 10 30 100

h - TYPICAL PULSED CUR REN T GAI N

125 °C

25 °C

I - COLLECTOR CURRENT (mA)

C

- 40 °C

V = 5.0 V

CE

Base-Emitter Saturation

Voltage vs Collector Cur rent

1

0.8

0.6

0.4

0.2

0.1 1 10 100

BESAT

V - COLLECTOR-EM ITT ER VO LTAGE (V)

- 40 °C

25 °C

125 °C

β

I - COLLECT OR CURRENT (mA)

C

= 10

Collector-Emitter Sat urati on
Voltage vs Collector Curr en t

0.3

0.25

= 10

β

0.2

0.15

0.1

0.05

0.1 1 10 100

CESAT

V - COLLECTOR-EMITTER VOLTAGE (V)

I - COLLECTOR CURRENT (mA)

C

25 °C

125 °C

- 40 °C

Base-Emitter ON Voltage vs

Collector Current

1

0.8

0.6

0.4

0.2

BEON

0.1 1 10 40

V - BASE-EMITTER ON VOLTAGE (V)

- 40 °C
25 °C

125 °C

V = 5.0 V

CE

I - COLLECTOR CURRENT (mA)

C

Co llector-C u t o ff Curre nt

vs Ambie nt Tem p er atu re

10

V = 45V

CB

1

CBO

I - C O L LE C TO R CU RREN T ( n A)

0.1
25 50 75 100 125 150

T - A MBIE NT TEMP ERATUR E ( C)

A

°

Typical Characteristics (continued)

2N5088 / MMBT5088 / 2N5089 / MMBT5089

NPN General Purpose Amplifier

(continued)

Input and Output Capacitance

vs Reverse Bias Voltage

5

4

3

C

te

2

CAPACITANCE (p F )

1

0

048121620

REVERSE BIAS VOLTAGE (V)

f = 1.0 MHz

C

ob

Normalized Collector-Cutoff Current

°

A

CHARACTERIS TIC S RELATI VE TO VALUE AT T = 25 C

1000

vs Amb ie nt Tem p er atu re

100

10

1

25 50 75 100 125 150

T - AMBIENT TEMPERATURE ( C)

A

°

Contours of Constant Gain

Bandw idt h Product (f )

10

7
5

3

2

CE

V - COLLECTOR VOLTAGE (V)

1

0.1 1 10 100

I - COLLEC T OR CURRENT (mA)

C

150 MH z

125 MH z
100 MH z

75 MHz

T

175 MH z

Wideband N oise Frequency

vs Source Resistance

5

4

3

2

1

NF - NOI S E FI GURE (d B)

0

1,000 2,000 5,000 10,000 20,000 50,000 100,000

V = 5.0 V

CE

BANDWIDT H = 15. 7 k Hz

I = 100 µA

C

R - SOURCE RESISTANCE ( )

S

I = 30 µA

C

I = 10 µA

C

Ω

3

Noise Figure vs Frequency

10

I = 200 µA,

C

8

6

4

2

NF - NOISE FIGURE ( dB)

0

0.0001 0.001 0.01 0.1 1 10 100

R = 10 k

I = 100 µA,

C

R = 10 k

S

I = 1.0 mA,

C

R = 500

S

I = 1.0 mA,

C

R = 5.0 k

S

f - FREQU ENCY (M Hz)

Ω

S

Ω

Ω

Ω

V = 5.0V

CE

Power Dissipation vs

Ambient Temperature

625

500

SOT-23

375

250

125

D

P - POW ER DIS SIPATION (mW)

0

0 25 50 75 100 125 150

TO-92

TEMPERATURE ( C)

o

Typical Characteristics (continued)

2N5088 / MMBT5088 / 2N5089 / MMBT5089

NPN General Purpose Amplifier

(continued)

Cont ours of Constant

Narrow Band Noise Figure

10,000

Ω

5,000

2,000

1,000

500

V = 5. 0 V

CE

f = 100 Hz
BANDWIDTH

200

= 20 Hz

S

R - SOURCE RESISTANCE ( )

100

1 10 100 1,000

I - COLLECTOR CURRENT ( A)

C

3.0 dB

4.0 dB

6.0 dB

8.0 dB
10 dB

12 dB

14 dB

Contours of Constant

Nar r ow Band Noise Figur e

10000

Ω

5000

2000
1000

500

V = 5.0V

CE

f = 10kHz

200

BANDWIDTH

S

= 2.0kHz

R - SOURCE RESISTANCE ( )

100

1 10 100 1000

I - COLL ECTOR CU RRENT ( A)

C

1.0 dB

2.0 dB

µ

µ

3.0 dB

4.0 dB

6.0 dB

8.0 dB

Contours of Const ant

Narrow Band Noise Figure

10,000

Ω

5,000

2,000

1,000

500

V = 5.0 V

CE

f = 1.0 kHz
BANDWIDTH

200

= 200 Hz

S

R - SOURCE RESISTANCE ( )

100

1 10 100 1,000

I - COLLECTOR CURRENT ( A)

C

2.0 dB

3.0 dB

4.0 dB

6.0 dB

8.0 dB

Contours of Constant

Nar row Ba nd Noise Figure

10000

Ω

5000

2000
1000

V =

CE

500

5.0V
f = 1.0 MHz

200

BANDW IDTH

S

= 200kHz

R - SOURCE RESISTANCE ( )

100

0.01 0.1 1 10

I - COLLEC TO R CU RRENT ( A)

C

2.0 dB

3.0 dB

4.0 dB

8.0 dB

µ

7.0 dB

µ

5.0
dB

6.0
dB

NPN General Purpose Amplifier

Typical Common Emitter Characteristics (f = 1.0 kHz)

2N5088 / MMBT5088 / 2N5089 / MMBT5089

(continued)

Typical C o mmo n Emi t ter Char acteristics

1.4

CE

1.3

h

oe

1.2

1.1

h

re

1

h

ie

0.9

h

fe

0.8

C H AR ACT ER ISTI CS RELATI VE TO VALU E( V = 5V)

0 5 10 15 20 25

V - COLLECTOR VOLTA GE (V)

CE

h

fe

h

ie

h

re

h

oe

I = 1.0mA

C

f = 1 . 0kHz
T = 25 C

A

°

Typ ical Common Emitter Characteristics

100

C

f = 1.0kHz

10

h and h

re

ie

h

oe

1

h

fe

0.1

Typical Common Emitter Characteristics

°

1.5

A

1.4

V = 5.0V

CE

1.3

f = 1.0kHz
I = 1.0m A

1.2

C

1.1
1

0.9

h

0.8

0.7

0.6

0.5

CHARACTERISTICS RELATIVE TO VALUE(T =25 C)

h

h

oe

h

fe

h

h

ie

re

-100 -50 0 50 100 150

T - JU NCTIO N TE MP ER AT UR E ( C)

J

oe

h

re

h

fe

ie

h

ie

h

re

h

fe

h

oe

°

3

0.01

CHARACTERISTICS RELATIVE TO VALUE(I =1mA)

0.1 0.2 0.5 1 2 5 10 20 50 100

I - COLLEC TOR CUR RENT (mA )

C

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Rev. G

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