Datasheet 2N5087, 2N5086 Datasheet (Fairchild Semiconductor)

Discrete POWER & Signal

Technologies

2N5086 / MMBT5086 / 2N5087 / MMBT5087

2N5086
2N5087

C

B

E

TO-92

MMBT5086
MMBT5087

C

SOT-23

Mark: 2P / 2Q

B

E

PNP General Purpose Amplifier

This device is designed for low level, high gain, low noise general
purpose amplifier applications at collector currents to 50 mA.
Sourced from Process 62.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol Parameter Value Units

V

CEO

V

CBO

V

EBO

I

C

TJ, T

stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Collector-Emitter Voltage 50 V
Collector-Base Voltage 50 V
Emitter-Base Voltage 5.0 V
Collector Current - Continuous 100 mA
Operating and Storage Junction Temperature Range -55 to +150

°

C

Thermal Characteristics TA= 25°C unless otherwise noted

Symbol Characteristic Max Units

P

D

R

θ

JC

R

θ

JA

Total Device Dissipation

Derate above 25°C

Thermal Resist ance, Junction to Case 83.3
Thermal Resist ance, Junction to Ambient 200 357

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

ã 1997 Fairchild Semiconductor Corporation

2N5086
2N5086

625

5.0

*MM BT5086
*MM BT5087

350

2.8

mW

mW/°C

C/W

°

C/W

°

(BR)

(BR)

PNP General Purpose Amplifier

(continued)

Electrical Characteristics TA= 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Max Units

OFF CHARACTERISTICS

V

CEO

V

CBO

I

CBO

I

EBO

ON CHARACTERISTICS

h

FE

V

sat

CE(

V

BE(on)

Collector-Emitte r Breakdown Voltage* IC = 1.0 mA, IB = 0 50 V
Collector-Base Breakdown Voltag e

I

= 100 µA, IE = 0

C

50 V

Collector Cutoff Current VCB = 10 V, IE = 0

V

= 35 V, IE = 0

CB

Emitter Cutoff Current VEB = 3.0 V, IC = 0 50 nA

DC Current Gain

I

= 100 µA, VCE = 5.0 V

C

2N5086
2N5087

I

= 1.0 mA, VCE = 5.0 V

C

2N5086
2N5087

I

= 10 mA, VCE = 5.0 V

C

2N5086
2N5087

Collector-Emitte r Saturation Voltage IC = 10 mA, IB = 1.0 mA 0.3 V

)

150
250
150
250
150
250

Base-Emitter On Voltage IC = 1.0 mA, VCE = 5.0 V 0.85 V

10
50

500
800

nA
nA

2N5086 / MMBT5086 / 2N5087 / MMBT5087

SMALL SIGNAL CHARACTERISTICS

f

T

C

cb

h

fe

NF Noise Figure

Current Gain - Band width Product

I

= 500 µA,V

C

Collector-Base Capacitance VCB = 5.0 V, I
Small-Si gnal Current Gain IC = 1.0 mA, V

f = 1.0 kHz
I

= 100 µA, VCE = 5.0 V,

C

R

= 3.0 kΩ, f = 1.0 kHz

S

I

= 20 µA, VCE = 5.0 V,

C

R

= 10 kΩ,

S

f = 10 Hz to 15.7 kHz

= 5.0 V,f = 20 MHz

CE

= 0, f = 100 kHz 4.0 pF

E

= 5.0,

2N5086

CE

2N5087
2N5086
2N5087

2N5086
2N5087

40 MHz

150
250

600
900

3.0

2.0

3.0

2.0

*Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%

Spice Model

PNP (Is=6.734f Xti=3 Eg=1.11 Vaf=45.7 Bf=254.1 Ne=1.741 Ise=6.734f Ikf=.1962 Xtb=1.5 Br=2.683 Nc=2
Isc=0 Ikr=0 Rc=1.67 Cjc=6.2p Mjc=.301 Vjc=.75 Fc=.5 Cje=7.5p Mje=.2861 Vje=.75 Tr=10.1n Tf=467.8p
Itf=.17 Vtf=5 Xtf=8 Rb=10)

dB
dB

dB
dB

Typical Characteristics

2N5086 / MMBT5086 / 2N5087 / MMBT5087

PNP General Purpose Amplifier

(continued)

Typical Pulsed Current Gain

vs Collector Current

350
300

125° C

250
200

25 °C

150

100

- 40 °C

50

0.01 0.03 0.1 0.3 1 3 10 30 100

FE

h - TYPICAL PULSED CURRENT GAIN

I - COLLECTOR C URRENT (mA)

C

V = 5V

CB

Base-Emitter Saturation

Voltage vs Collector Current

1

0.8

0.6

0.4

0.2

0

BESAT

V - BASE EMITTER VOLTAGE (V)

- 40 ºC
25 °C

125 ºC

= 10

β

0.1 1 10 50

I - COLLECTOR CURRENT (mA)

C

Collector-Emitter Saturation
Voltage vs Collector Current

V - COLLECTOR EMITTER VOLTAGE (V)

0.3

0.25

0.2

0.15

0.1

0.05
0

CESAT

= 10

β

25 °C

125 ºC

- 40 ºC

0.1 1 10

I - COLLECTOR CURRENT (mA)

C

Base Emitter ON Voltage vs

Collector Current

1

0.8

- 40 ºC

0.6

0.4

0.2

0

0.1 1 10 25

BEON

V - BASE EMITTER ON VOLTAGE (V)

25 °C

125 ºC

V = 5V

CE

I - COLLECTOR CURRENT (mA)

C

Collector-Cutoff Current

vs. Ambient Temperature

100

V = 40V

CB

10

1

0.1

CBO

0.01

I - COLLECTOR CURRENT (nA)

25 50 75 100 125

T - AMBIENT TEMPER ATURE ( C)

A

º

Input and Output Capacitance

vs Reverse Bias Voltage

20

16

12

8

CAPACITANCE (pF)

4

0

048121620

C

ibo

REVERSE BIAS VOLTAGE (V)

f = 1 MHz

C

obo

Typical Characteristics (continued)

0

2N5086 / MMBT5086 / 2N5087 / MMBT5087

PNP General Purpose Amplifier

(continued)

Gain Bandwidth Product

vs Collector Current

350

V = 5V

CE

300
250
200
150
100

50

0

0.1 1 10 100

T

f - GAIN BANDWIDTH PRODUCT (MHz)

I - COLLECTOR CURRENT (mA )

C

Wideband Noise Frequency

vs Source Resistance

8

6

I = 10 µA

C

4

I = 100 µA

C

2

NF - NOISE FIGURE (dB)

0

1,000 2,000 5,000 10,000 20,000 50,000 100,000

R - SOURCE RESISTANCE ( )

S

V = 5V

CE

BANDWIDTH = 15.7 kHz

Ω

Noise Figure vs Frequency

5

4

3

I = - 250 µA, R = 5.0 k

C

2

1

NF - NOISE FIGURE (dB)

0

100 1000 10000 100000

I = - 500 µA, R = 1.0 k

C

I = - 20 µA, R = 10 k

C

S
S

S

f - FREQUENCY (Hz)

Power Dissipation vs
Ambient Temperature

625

TO-92

500

375

SOT-23

250

125

D

P - POWER DISSIPATION (W)

0

0 25 50 75 100 125 150

TEMPERATURE ( C)

o

Ω

Ω

Ω

V = 5V

CE

Equivalent Input Noise Current

√

10

5

2
1

0.5

0.2

0.1

0.001 0.01 0.1 1

2

n

i - EQUIVALENT INPUT NOISE CURRENT (pA/ Hz)

√

vs Collector Current

V = - 5.0V

CE

i , f = 100 Hz

n

i , f = 1.0 kHz

n

i , f = 10 kHz

n

I - COLLECTOR CURRENT (mA)

C

Equivalent Input Noise Voltage

√

0.1

µ

0.05

0.02

0.01

0.005

0.002

0.001

0.001 0.01 0.1 1

2

n

e - EQUIVALENT INPUT NOISE VOLTAGE ( V/ Hz)

√

vs Collector Current

V = - 5.0V

CE

e , f = 100 Hz

n

e , f = 1.0 kHz

n

I - COLLECTOR CURRENT (mA)

C

e , f = 10 kHz

n

Typical Characteristics (continued)

2N5086 / MMBT5086 / 2N5087 / MMBT5087

PNP General Purpose Amplifier

(continued)

Contours of Constant

Narrow Band Noise Figure

1,000,000

Ω

100,000

10,000

1,000

V = - 5V

S

R - SOURCE RESISTANCE ( )

f = 10 kHz

BANDWIDTH = 1.5 kHz

100

0.001 0.01 0.1 1

1.0 dB

4.0 dB

6.0 dB

10 dB

CE

I - COLLECTOR CURRENT (mA)

C

Contours of Constant

Narrow Band Noise Figu re

1,000,000

Ω

100,000

10,000

1,000

S

R - SOURCE RESISTANCE ( )

100

0.001 0.01 0.1 1

4.0 dB

6.0 dB

10 dB

I - COLLECTOR CURRENT (mA)

C

10 dB

6.0 dB

4.0 dB

V = - 5V

CE

f = 1.0 kHz
BANDWIDTH = 150 Hz

4.0 dB

2.0 dB

10 dB

6.0 dB

Contours of Constant

Narrow Band Noise Figure

1,000,000

Ω

100,000

10,000

1,000

S

R - SOURCE RESISTANCE ( )

100

0.001 0.01 0.1 1

5.0 dB

8.0 dB

12 dB

I - COLLECTOR CURRENT (mA)

C

5.0 dB

3.0 dB

12 dB

8.0 dB

V = - 5V

CE

f = 100 Hz
BANDWIDTH = 15 Hz

Contours of Constant

Narrow Band Noise Figure

10,000

Ω

5,000

2,000

1,000

500

200

S

R - SOURCE RESISTANCE ( )

100

0.01 0.1 1 10

4.0 dB

6.0 dB

V = - 5V

CE

f = 10 MHz
BANDWIDTH
= - 2 kHz

I - COLLECTOR CURRENT (mA)

C

2.0 dB

4.0 dB

6.0 dB

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not intended to be an exhaustive list of all such trademarks.

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®

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PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

Formative or
In Design

First Production

Full Production

Not In Production

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.