Datasheet 2N5038 Datasheet (ON Semiconductor)

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1
Motorola Bipolar Power Transistor Device Data
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. . . fast switching speeds and high current capacity ideally suit these parts for use in switching regulators, inverters, wide–band amplifiers and power oscillators in industrial and commercial applications.
High Speed — tf = 0.5 µs (Max)
High Current — I
C(max)
= 30 Amps
Low Saturation — V
CE(sat)
= 2.5 V (Max) @ IC = 20 Amps
*MAXIMUM RATINGS
Rating
Symbol
2N5038
2N5039
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Unit
Collector–Base Voltage
V
CBO
150
120
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Vdc
Collector–Emitter Voltage
V
CEV
150
120
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Vdc
Emitter–Base Voltage
V
EBO
7
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Vdc
Collector Current — Continuous
Peak (1)
I
C
I
CM
20 30
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Adc
Base Current — Continuous
I
B
5
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Adc
Total Device Dissipation @ TC = 25_C
Derate above 25_C
P
D
140
0.8
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Watts W/_C
Operating and Storage Junction Temperature Range
TJ, T
stg
–65 to +200
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
ОООООООО
ОООООООО
ОООООООО
Max
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Unit
Thermal Resistance, Junction to Case
R
θJC
ОООООООО
ОООООООО
ОООООООО
1.25
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
_
C/W
*Indicates JEDEC Registered Data. (1) Pulse Test: Pulse Width v 10 ms, Duty Cycle v 50%.
Figure 1. Switching Time Test Circuit
0
+11 V 10
–5 V
1N4933
V
CC
R
C
2.5
IC = 12 AMPS IB1 = IB2 = 1.2 AMPS
–9 V
2N5038
+30 V
PW = 20
µ
s
DUTY CYCLE = 1%
IC = 10 AMPS IB1 = IB2 = 1.0 AMPS
2N5039
Preferred devices are Motorola recommended choices for future use and best overall value.

SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N5038/D
Motorola, Inc. 1995
 
*Motorola Preferred Device
20 AMPERE
NPN SILICON
POWER TRANSISTORS
75 and 90 VOLTS
140 WATTS
CASE 1–07
TO–204AA
(TO–3)
REV 7
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Motorola Bipolar Power Transistor Device Data
*ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Characteristic
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Symbol
Min
Max
ÎÎÎ
ÎÎÎ
ÎÎÎ
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 200 mAdc, IB = 0) 2N5038
2N5039
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
V
CEO(sus)
90 75
— —
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
Collector Cutoff Current
(VCE = 140 Vdc, V
BE(off)
= 1.5 V) 2N5038
(VCE = 110 Vdc, V
BE(off)
= 1.5 V) 2N5039
(VCE = 100 Vdc, V
BE(off)
= 1.5 Vdc, TC = 150_C) 2N5038
(VCE = 85 Vdc, V
BE(off)
= 1.5 Vdc, TC = 150_C) 2N5039
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
I
CEX
— — — —
50 50 10 10
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
mAdc
Emitter Cutoff Current
(VEB = 5 Vdc, IC = 0) 2N5038
2N5039
(VEB = 7 Vdc, IC = 0) Both
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
I
EBO
— — —
5 15 50
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
mAdc
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 12 Adc, VCE = 5 Vdc) 2N5038 (IC = 10 Adc, VCE = 5 Vdc) 2N5039
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
h
FE
20 20
100 100
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Collector–Emitter Saturation Voltage
(IC = 20 Adc, IB = 5 Adc)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
V
CE(sat)
2.5
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
Base–Emitter Saturation Voltage
(IC = 20 Adc, IB = 5 Adc)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
V
BE(sat)
3.3
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common–Emitter Small–Signal Short–Circuit
Forward Current Transfer Ratio (IC = 2 Adc, VCE = 10 Vdc, f = 5 MHz)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
|hfe|
12
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
SWITCHING CHARACTERISTICS
RESISTIVE LOAD Rise Time
(VCC = 30 Vdc)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
t
r
0.5
ÎÎÎ
ÎÎÎ
ÎÎÎ
µs
Storage Time
(IC = 12 Adc, IB1 = IB2 = 1.2 Adc) 2N5038
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
t
s
1.5
ÎÎÎ
ÎÎÎ
ÎÎÎ
µs
Fall Time
(IC = 10 Adc, IB1 = IB2 = 1 Adc) 2N5039
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
t
f
0.5
ÎÎÎ
ÎÎÎ
ÎÎÎ
µs
*Indicates JEDEC Registered Data. (1) Pulse Test: Pulse Width v 300, µs, Duty Cycle v 2%.
100
Figure 2. Forward Bias Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
5 2
0.1 1 10 100
BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT
70
1
I
C
, COLLECTOR CURRENT (AMPS)
dc
50 20
10
0.5
0.2
2 3 5 7 20 30 50
TC = 25°C
2N5039 2N5038
There are two limitations on the power handling ability of a transistor: average junction temperature and second break­down. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipa­tion than the curves indicate.
Second breakdown pulse limits are valid for duty cycles to 10%. At high case temperatures, thermal limitations may re­duce the power that can be handled to values less than the limitations imposed by second breakdown.
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Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO–204AA OUTLINE SHALL APPLY.
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 1.550 REF 39.37 REF B ––– 1.050 ––– 26.67 C 0.250 0.335 6.35 8.51 D 0.038 0.043 0.97 1.09 E 0.055 0.070 1.40 1.77 G 0.430 BSC 10.92 BSC H 0.215 BSC 5.46 BSC K 0.440 0.480 11.18 12.19 L 0.665 BSC 16.89 BSC N ––– 0.830 ––– 21.08 Q 0.151 0.165 3.84 4.19 U 1.187 BSC 30.15 BSC V 0.131 0.188 3.33 4.77
A
N
E
C
K
–T–
SEATING PLANE
2 PLD
M
Q
M
0.13 (0.005) Y
M
T
M
Y
M
0.13 (0.005) T
–Q–
–Y–
2
1
U
L
G
B
V
H
CASE 1–07
TO–204AA (TO–3)
ISSUE Z
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Motorola Bipolar Power Transistor Device Data
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2N5038/D
*2N5038/D*
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