HIGH CURR ENT NPN SILICON TRANSISTOR
■ SGS-THOMS O N PREF ERRE D SA LES TYP E
■ NPN TRANSISTOR
DESCRIPTION
The 2N5038 is a silicon planar multiepitaxial NPN
transistors in Jedec TO-3 metal case. They are
especially intended for high current and switching
applications.
2N5038
1
2
TO-3
INTERNAL SCHEMATIC DIAGRAM
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
V
V
V
V
V
I
P
T
Collector-Base Voltage (IE = 0) 150 V
CBO
Collector-Emitter Voltage (VBE=-1.5V RBE=100Ω) 150 V
CEX
Collector-Emitter Voltage (RBE < 50Ω) 110 V
CER
Collector-Emitter Voltage (IB = 0) 90 V
CEO
Emitter-Base Voltage (IC = 0) 7 V
EBO
Collector Current 20 A
I
C
Collector Peak Current 30 A
CM
Base Current 5 A
I
B
Total Dissipation at Tc ≤ 25 oC 140 W
tot
Storage Temperature -65 to 200
stg
Max. Operating Junction Temperature 200
T
j
o
C
o
C
June 1997
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2N5038
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 1.25
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CEV
Collector Cut-off
Current (V
= -1.5V)
BE
= 140 V
V
CE
V
= 100 V Tc = 150 oC50
CE
10
I
CEO
I
EBO
V
CEO(sus)
Collector Cut-off
Current (I
= 0)
B
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
= 70 V 20 mA
V
CE
= 7 V
V
V
EB
EB
= 5 V
50
5
IC = 0.2 A 90 V
Sustaining Voltage
V
CER(sus)
∗ Collector-Emitter
IC = 0.2 A RBE = 50 Ω 110 V
Sustaining Voltage
V
CEX(sus)
∗ Collector-Emitter
IC = 0.2 A RBE = 100 Ω VBE =-1.5V 150 V
Sustaining Voltage
V
CE(sat)
V
BE(sat)
∗ Collector-Emitter
Saturation Voltage
∗ Collector-Emitter
IC = 12 A IB = 1.2 A
I
= 20 A IB = 5 A
C
1
2.5
IC = 20 A IB = 5 A 3.3 V
Saturation Voltage
∗ Base-Emitter Voltage IC = 12 A VCE = 5 V 1.8 V
V
BE
h
∗ DC Current Gain IC = 2 A VCE = 5 V
FE
h
Small Signal Current
fe
I
= 12 A VCE = 5 V
C
IC = 2 A VCE = 10 V f = 5 MHz 12
50
20
250
100
Gain
C
CBO
Collector-Base
IE = 0 VCB = 10 V f = 1 MHz 300 pF
Capacitance
Rise Time IC = 12 A VCC = 30 V
t
r
t
Storage Time 1.5 µs
s
I
= -IB2 = 1.2A
B1
0.5 µs
mA
mA
mA
mA
V
V
Fall Time 0.5 µs
t
f
I
∗∗ Second Breakdown
s/b
Collector Current
E
Second Breakdown
s/b
VCE = 28 V
V
VBE = -4 V RBE = 20 Ω L = 180µH13 mJ
Energy
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
2/4
= 45 V
CE
5
0.9
A
A
P003F
TO-3 MECHANICAL DATA
2N5038
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 11.00 13.10 0.433 0.516
B 0.97 1.15 0.038 0.045
C 1.50 1.65 0.059 0.065
D 8.32 8.92 0.327 0.351
E 19.00 20.00 0.748 0.787
G 10.70 11.10 0.421 0.437
N 16.50 17.20 0.649 0.677
P 25.00 26.00 0.984 1.023
R 4.00 4.09 0.157 0.161
U 38.50 39.30 1.515 1.547
V 30.00 30.30 1.187 1.193
mm inch
P
A
G
U
V
N
O
B
D
C
E
R
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2N5038
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or ot h erwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifi cations mentioned
in this publication are subject to change without notice. This publication sup ersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
SGS-THOMSON Microelectronics GROUP OF COMPANIES
. . .
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