Page 1
GENERAL PURPOSE AMPLIFIERS AND SWITCHES
DESCRIPTION
The 2N2905A and 2N2907A are silicon planar
epitaxial PNP transistors in Jedec TO-39 (for
2N2905A) and in Jedec TO-18 (for 2N2907A)
metal case. They are designed for high speed
saturated switching and general purpose
applications.
2N2905A approved to CECC 50002-100,
2N2906A approved to CECC 50002-103
availableon request.
2N2905A
2N2907A
TO-18 TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Val u e Uni t
V
V
V
P
T
Collector-Base Voltage (IE=0) -60 V
CBO
Collector-Emitter Voltage (IB=0) -60 V
CEO
Emitter-Base Voltage (IC=0) -5 V
EBO
Collect or Cur rent -0. 6 A
I
C
Total Dissipat i on at T
tot
Stora ge Temperatu re -65 to 200
stg
Max. Operat i ng Juncti on Temperatu re 200
T
j
for 2N2905A
for 2N2907A
at T
for 2N2905A
for 2N2907A
amb
case
≤ 25oC
0.6
0.4
≤ 25oC
3
1.8
W
W
W
W
o
C
o
C
November 1997
1/7
Page 2
2N2905A/2N2907A
THERMAL DATA
R
thj-case
R
thj-amb
Ther mal Resist an ce Junct ion-Case Max
Thermal Resistance Junction-Ambient Max
TO-39 TO-18
58.3
292
97.3
437.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
I
I
V
(BR) CBO
CBO
Collector Cut-off
Current (I
CEX
Collector Cut-off
Current (V
BEX
Base C ut-off Cu rrent
(V
BE
∗ Co llec tor-Bas e
E
BE
= -0. 5V )
=0)
= -0. 5V )
V
=-50V
CB
=-50V T
V
CB
= -30 V -50 nA
V
CE
V
= -30 V -50 nA
CE
I
=-10µA-60V
C
case
=150oC
-10
-10
Break dow n Volt age
=0)
(I
E
V
∗ Co llec tor-Em it t er
(BR) CEO
I
=-10mA -60 V
C
Break dow n Volt age
=0)
(I
B
V
(BR)EBO
∗ Emitt er-Base
I
=-10µA-5V
E
Break dow n Volt age
=0)
(I
C
V
∗ Collector- E mitter
CE(sat)
Saturation Voltage
V
∗ Base-Emitt er
BE(sat)
Saturation Voltage
h
∗ DC C urr ent Gain IC=-0.1mA VCE=-10V
FE
f
C
EBO
Tr ansition Frequenc y VCE=-50V f=100MHz
T
Emitt er Base
IC=-150mA IB=-15mA
=-500mA IB=-50mA
I
C
IC=-150mA IB=-15mA
=-500mA IB=-50mA
I
C
=-1mA VCE=-10V
I
C
=-10mA VCE=-10V
I
C
=-150mA VCE=-10V
I
C
=-500mA VCE=-10V
I
C
I
=-20mA
C
IC=0 VEB= -2 V f = 1MHz 30 pF
75
100
100
100
50
200 MHz
-0.4
-1.6
-1.3
-2.6
300
Capacit a nc e
C
CBO
Collector Base
IE=0 VCB= -10 V f = 1MH z 8 pF
Capacit a nc e
∗∗ Delay Time VCC=-30V IC= -150 mA
t
d
∗∗ Rise Time VCC=-30V IC= -150 mA
t
r
∗∗ Storage Time VCC=-6V IC= -150 mA
t
s
∗∗ Fall Time VCC=-6V IC= -150 mA
t
f
∗∗ Tu rn-on Time VCC=-30V IC= -150 mA
t
on
∗∗ Turn-off Time VCC=-6V IC= -150 mA
t
off
∗
Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1%
∗∗ See test circuit
=-15mA
I
B1
=-15mA
I
B1
=-IB2=-15mA
I
B1
I
=-IB2=-15mA
B1
=-15mA
I
B1
=-IB2=-15mA
I
B1
10 ns
40 ns
80 ns
30 ns
45 ns
100 ns
nA
µA
V
V
V
V
2/7
Page 3
2N2905A/2N2907A
Normalized DC CurrentGain. Collector-emitter Saturation Voltage.
Collector-baseand Emitter-basecapacitances. Switching Characteristics.
3/7
Page 4
2N2905A/2N2907A
Test Circuitfor ton,tr,td.
Test Circuitfor t
PULSE GENERATOR : TO OSCILLOSCOPE :
t
≤ 2.0 ms tr< 5.0 ns
r
Frequency = 150 Hz Z
Z
=50 Ω
o
off,to,tf
.
>10MΩ
IN
4/7
PULSE GENERATOR : TO OSCILLOSCOPE :
≤ 2.0 ns tr< 5.0 ns
t
r
Frequency =150 Hz Z
Z
= 50 Ω
o
>100 MΩ
IN
Page 5
TO-18 MECHANICAL DATA
2N2905A/2N2907A
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 12.7 0.500
B 0.49 0.019
D 5.3 0.208
E 4.9 0.193
F 5.8 0.228
G 2.54 0.100
H 1.2 0.047
I 1.16 0.045
L45
o
mm inch
o
45
G
I
H
DA
F
E
L
B
C
0016043
5/7
Page 6
2N2905A/2N2907A
TO-39 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 12.7 0.500
B 0.49 0.019
D 6.6 0.260
E 8.5 0.334
F 9.4 0.370
G 5.08 0.200
H 1.2 0.047
I 0.9 0.035
L45
mm inch
o
(typ.)
I
H
6/7
DA
G
F
E
L
B
P008B
Page 7
2N2905A/2N2907A
Information furnished is believed to be accurate and reliable.However, SGS-THOMSONMicroelectronics assumes no responsability for the
consequencesof use ofsuch information nor for any infringement of patentsor other rights of third parties which may results from itsuse. No
licenseis granted by implication or otherwise underany patentor patent rightsof SGS-THOMSON Microelectronics.Specificationsmentioned
in this publicationare subject to change withoutnotice.This publicationsupersedes andreplaces all information previously supplied.
SGS-THOMSONMicroelectronics productsare notauthorizedfor useascriticalcomponents in life supportdevicesor systemswithoutexpress
writtenapproval of SGS-THOMSONMicroelectonics.
1997 SGS-THOMSONMicroelectronics- Printedin Italy - AllRights Reserved
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