
GENERAL PURPOSE AMPLIFIERS AND SWITCHES
DESCRIPTION
The 2N2905 and 2N2907 are silicon planar
epitaxial PNP transistors in Jedec TO-39 (for
2N2905) and in Jedec TO-18 (for 2N2907) metal
case. Theyare designed for high speed saturated
switchingand generalpurposeapplication.
2N2905 approved to CECC 50002-102,
2N2907 approved to CECC 50002-103
availableon request.
2N2905
2N2907
TO-18 TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Val u e Uni t
V
V
V
P
T
Collector-Base Voltage (IE=0) -60 V
CBO
Collector-Emitter V oltage (IB=0) -40 V
CEO
Emitter-Base Voltage (IC=0) -5 V
EBO
Collect or Cur rent -0. 6 A
I
C
Total Dissipat i on at T
tot
Stora ge Temperatu re -65 to 200
stg
Max. Operat i ng Junction Temperatu re 200
T
j
for 2N2905
for 2N2907
at T
for 2N2905
for 2N2907
amb
case
≤ 25oC
0.6
0.4
≤ 25oC
3
1.8
W
W
W
W
o
C
o
C
November 1997
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2N2905/2N2907
THERMAL DATA
R
thj-case
R
thj-amb
Ther mal Resistance Junction- Case Max
Thermal Resistance Junction-Ambient Max
TO-39 TO-18
58.3
292
97.3
437.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
I
I
V
(BR) CBO
CBO
Collector Cut-off
Current (I
CEX
Collector Cut-off
Current (V
BEX
Base Cut-o ff Current
(V
BE
∗ Collector-Base
E
BE
= -0. 5V)
=0)
= -0. 5V)
V
=-50V
CB
=-50V T
V
CB
= -30 V -50 nA
V
CE
V
= -30 V -50 nA
CE
I
=-10µA-60V
C
case
=150oC
-20
-20
Break dow n Volt age
=0)
(I
E
V
∗ Collector-Emitter
(BR) CEO
I
=-10mA -40 V
C
Break dow n Volt age
=0)
(I
B
V
(BR)EBO
∗ Emitter-Base
I
=-10µA-5V
E
Break dow n Volt age
=0)
(I
C
V
∗ Co llector-Emitter
CE(sat)
Saturation Voltage
V
∗ Ba se-Emitter
BE(sat)
Saturation Voltage
h
∗ DC Cur rent Gain IC=-0.1mA VCE=-10V
FE
f
C
EBO
Tr ansition Frequency VCE=-20V f=100MHz
T
Emitt er Base
IC=-150mA IB=-15mA
=-500mA IB=-50mA
I
C
IC=-150mA IB=-15mA
=-500mA IB=-50mA
I
C
=-1mA VCE=-10V
I
C
=-10mA VCE=-10V
I
C
=-150mA VCE=-10V
I
C
=-500mA VCE=-10V
I
C
I
=-50mA
C
IC=0 VEB= -2 V f = 1MHz 30 pF
35
50
75
100
30
200 MHz
-0.4
-1.6
-1.3
-2.6
300
Capacit a nc e
C
CBO
Collector Base
IE=0 VCB= -10 V f = 1MHz 8 pF
Capacit a nc e
t
t
∗
Pulsed: Pulse duration =300 µs, duty cycle ≤ 1%
Delay Time VCC=-30V IC= -150 mA
d
Rise Time VCC=-30V IC= -150 mA
t
r
St orage Time VCC=-6V IC= -150 mA
s
Fall T ime VCC=-6V IC= -150 mA
t
f
=-15mA
I
B1
=-15mA
I
B1
=-IB2=-15mA
I
B1
I
=-IB2=-15mA
B1
10 ns
40 ns
80 ns
30 ns
nA
µA
V
V
V
V
2/5

TO-18 MECHANICALDATA
2N2905/2N2907
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 12.7 0.500
B 0.49 0.019
D 5.3 0.208
E 4.9 0.193
F 5.8 0.228
G 2.54 0.100
H 1.2 0.047
I 1.16 0.045
L45
o
mm inch
o
45
G
I
H
DA
F
E
L
B
C
0016043
3/5

2N2905/2N2907
TO-39 MECHANICALDATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 12.7 0.500
B 0.49 0.019
D 6.6 0.260
E 8.5 0.334
F 9.4 0.370
G 5.08 0.200
H 1.2 0.047
I 0.9 0.035
L45
mm inch
o
(typ.)
I
H
4/5
DA
G
F
E
L
B
P008B

2N2905/2N2907
Information furnished is believedto be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequencesof use of such information nor for any infringement of patents or otherrights of third parties which may resultsfrom its use. No
licenseis grantedby implicationor otherwise underany patent or patentrights ofSGS-THOMSONMicroelectronics. Specificationsmentioned
in this publicationare subjectto change without notice.This publication supersedes andreplaces all informationpreviously supplied.
SGS-THOMSONMicroelectronics productsare notauthorized for useascriticalcomponents in lifesupportdevices or systems withoutexpress
writtenapproval of SGS-THOMSONMicroelectonics.
1997 SGS-THOMSONMicroelectronics - Printedin Italy - All Rights Reserved
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