Page 1
2002. 9. 17 1/4
SEMICONDUCTOR
TECHNICAL DATA
2N2904E
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Low Leakage Current
: I
CEX
=50nA(Max.), IBL=50nA(Max.)
@V
CE
=30V, VEB=3V.
Excellent DC Current Gain Linearity.
Low Saturation Voltage
: V
CE(sat)
=0.3V(Max.) @IC=50mA, IB=5mA.
Low Collector Output Capacitance
: C
ob
=4pF(Max.) @VCB=5V.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
60 V
Collector-Emitter Voltage
V
CEO
40 V
Emitter-Base Voltage
V
EBO
6 V
Collector Current
I
C
200 mA
Base Current
I
B
50 mA
Collector Power Dissipation
PC *
200 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
* Total Rating
EQUIVALENT CIRCUIT (TOP VIEW)
B
B1
C
A
A1
C
H
1. Q EMITTER
1
2. Q BASE
1
3. Q BASE
2
4. Q COLLECTOR
2
5. Q EMITTER
2
6. Q COLLECTOR
1
1
2
3
P
6
DIM MILLIMETERS
5
D
4
P
J
_
A
1.6 0.05
+
_
A1
1.0 0.05
+
_
1.6 0.05
+
B
_
B1
1.2 0.05
+
C
0.50
_
+
0.2 0.05
D
_
+
0.5 0.05
H
_
+
0.12 0.05
J
P5
TES6
65 4
Q1
Q2
1
23
Marking
Type Name
Z C
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2002. 9. 17 2/4Revision No : 0
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CEX
VCE=30V, VEB=3V
- - 50 nA
Base Cut-off Current
I
BL
VCE=30V, VEB=3V
- - 50 nA
Collector-Base Breakdown Voltage
V
(BR)CBO
IC=10 A, IE=0
60 - - V
Collector-Emitter Breakdown Voltage *
V
(BR)CEOIC
=1mA, IB=0
40 - - V
Emitter-Base Breakdown Voltage
V
(BR)EBO
IE=10 A, IC=0
6.0 - - V
DC Current Gain *
hFE(1) VCE=1V, IC=0.1mA
40 - -
hFE(2) VCE=1V, IC=1mA
70 - -
hFE(3) VCE=1V, IC=10mA
100 - 300
hFE(4) VCE=1V, IC=50mA
60 - -
hFE(5) VCE=1V, IC=100mA
30 - -
Collector-Emitter Saturation Voltage *
V
CE(sat)
1 IC=10mA, IB=1mA
- - 0.2
V
V
CE(sat)
2 IC=50mA, IB=5mA
- - 0.3
Base-Emitter Saturation Voltage *
V
BE(sat)
1 IC=10mA, IB=1mA
0.65 - 0.85
V
V
BE(sat)
2 IC=50mA, IB=5mA
- - 0.95
Transition Frequency
f
T
VCE=20V, IC=10mA, f=100MHz
300 - - MHz
Collector Output Capacitance
C
ob
VCB=5V, IE=0, f=1MHz
- - 4.0 pF
Input Capacitance
C
ib
VBE=0.5V, IC=0, f=1MHz
- - 8.0 pF
Input Impedance
h
ie
VCE=10V, IC=1mA, f=1kHz
1.0 - 10
k
Voltage Feedback Ratio
h
re
0.5 - 8.0 x10
-4
Small-Signal Current Gain
h
fe
100 - 400
Collector Output Admittance
h
oe
1.0 - 40
Noise Figure NF
VCE=5V, IC=0.1mA Rg=1k ,
f=10Hz
15.7kHz
- - 5.0 dB
Switching Time
Delay Time
t
d
- - 35
nS
Rise Time
t
r
- - 35
Storage Time
t
stg
- - 200
Fall Time
t
f
- - 50
ELECTRICAL CHARACTERISTICS (Ta=25 )
2N2904E
* Pulse Test : Pulse Width 300 S, Duty Cycle 2%.
V
in
10kΩ
275Ω
V
C
Total< 4pF
out
300ns
10.9V
-0.5V
V
in
10.9V
-9.1V
10kΩ
1N916
or equiv.
20µs
V =3.0V
CC
0
t ,t < 1ns, Du=2%
r
f
275Ω
V =3.0V
CC
0
t ,t < 1ns, Du=2%
rf
V
C
Total< 4pF
out
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2002. 9. 17 3/4
2N2904E
Revision No : 0
I - V
100
COMMON EMITTER
Ta=25 C
80
C
60
40
20
COLLECTOR CURRENT I (mA)
0
0
COLLECTOR-EMITTER VOLTAGE V (V)
10
5
3
1234
V - I
BE(sat) C
CEC
1
I =0.1mA
B
CE
COMMON EMITTER
I /I =10
CE
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
1k
500
FE
300
100
50
30
DC CURRENT GAIN h
10
COLLECTOR CURRENT I (mA)
1
COMMON EMITTER
I /I =10
C
0.5
B
0.3
h - I
FE C
Ta=125 C
Ta=25 C
Ta=-55 C
310.30.1
V - I
CE(sat)
COMMON EMITTER
V =1V
CE
10 30 100 300
C
C
BE(sat)
1
Ta=-55 C
0.5
0.3
VOLTAGE V (V)
Ta=125 C
BASE-EMITTER SATURATION
0.1
0.1
0.3 1 3 10
COLLECTOR CURRENT I (mA)
I - V
200
COMMON EMITTER
V =1V
160
C
120
COLLECTOR CURRENT I (mA)
CE
80
40
0
0
0.4 0.8 1.2 1.6
Ta=25 C
=25 C
a
Ta=125 C
T
30 100 300
C
BEC
Ta=55 C
CE(sat)
0.1
0.05
0.03
VOLTAGE V (V)
0.01
COLLECTOR-EMITTER SATURATION
0.1 0.3 1
Ta=125 C
Ta=25 C
Ta=-55 C
31030100
COLLECTOR CURRENT I (mA)
V - I
CE B
1.0
CE
0.8
C
C
I =10mA
I =30mA
0.6
C
I =1mA
0.4
0.2
COMMON
EMITTER
Ta=25 C
0
0.001 0.1 1 10
COLLECTOR-EMITTER VOLTAGE V (V)
0.01
C
C
I =100mA
300
BASE-EMITTER VOLTAGE V (V)
BE
BASE CURRENT I (mA)
B
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2002. 9. 17 4/4
2N2904E
Revision No : 0
C - V , C - V
50
30
ib
ob
10
C (pF)
5
3
CAPACITANCE C (pF)
1
0.5
REVERSE VOLTAGE V (V)
ob CB ib EB
C
ib
C
ob
310.30.1
CB
V (V)
EB
f=1MHz
Ta=25 C
10 30
Pc - Ta
250
C
200
150
100
50
0
0
COLLECTOR POWER DISSIPATION P (mW)
25 50 75 100 125 150
AMBIENT TEMPERATURE Ta ( C)
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