Page 1
1
12/13/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
BV
DSX
/R
DS(ON)
I
DSS
BV
DGX
(max) (min) TO-92 TO-243AA*
300V 12Ω 200mA DN2530N3 DN2530N8
DN2530
Advanced DMOS Technology
Not recommended for new designs. Please use DN3535 or
DN3545 instead.
These depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Ordering Information
Features
❏ High input impedance
❏ Low input capacitance
❏ Fast switching speeds
❏ Low on resistance
❏ Free from secondary breakdown
❏ Low input and output leakage
Applications
❏ Normally-on switches
❏ Solid state relays
❏ Converters
❏ Linear amplifiers
❏ Constant current sources
❏ Power supply circuits
❏ Telecom
Absolute Maximum Ratings
Drain-to-Source Voltage BV
DSX
Drain-to-Gate Voltage BV
DGX
Gate-to-Source Voltage ± 20V
Operating and Storage Temperature -55°C to +150°C
Soldering Temperature* 300°C
* Distance of 1.6 mm from case for 10 seconds.
Package Options
Order Number / Package
* Same as SOT-89. Product shipped on 2000 piece carrier tape reels.
N-Channel Depletion-Mode
Vertical DMOS FETs
Note: See Package Outline section for dimensions.
Product marking for TO-243AA:
DN5T❋
Where ❋ = 2-week alpha date code
TO-243AA
(SOT-89)
G
D
S
D
TO-92
S G D
Page 2
2
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
0V
V
DD
R
gen
0V
-10V
Symbol Parameter Min Typ Max Unit Conditions
BV
DSX
Drain-to-Source 300 V VGS = -5V, ID = 100µA
Breakdown Voltage
V
GS(OFF)
Gate-to-Source OFF Voltage –1.0 –3.5 V VDS = 25V, ID= 10µA
∆V
GS(OFF)
Change in V
GS(OFF)
with Temperature 4.5 mV/°CVDS = 25V, ID= 10µA
I
GSS
Gate Body Leakage Current 100 nA VGS = ± 20V, VDS = 0V
I
D(OFF)
Drain-to-Source Leakage Current 10 µAVGS = -10V, VDS = Max Rating
1mAV
GS
= -10V, VDS = 0.8 Max Rating
T
A
= 125°C
I
DSS
Saturated Drain-to-Source Current 200 mA VGS = 0V, VDS = 25V
R
DS(ON)
Static Drain-to-Source 12 Ω VGS = 0V, ID = 150mA
ON-State Resistance
∆R
DS(ON)
Change in R
DS(ON)
with Temperature 1.1 %/°CVGS = 0V, ID = 150mA
G
FS
Forward Transconductance 300 m ID = 150mA, VDS = 10V
C
ISS
Input Capacitance 300 VGS = -10V, VDS = 25V
C
OSS
Common Source Output Capacitance 30 pF f = 1 MHz
C
RSS
Reverse Transfer Capacitance 5
t
d(ON)
Turn-ON Delay Time 10 VDD = 25V,
t
r
Rise Time 15 ns ID = 150mA,
t
d(OFF)
Turn-OFF Delay Time 15 R
GEN
= 25Ω
t
f
Fall Time 20
V
SD
Diode Forward Voltage Drop 1.8 V VGS = -10V, ISD = 150mA
t
rr
Reverse Recovery Time 600 ns VGS = -10V, ISD = 1A
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Package ID (continuous)* ID (pulsed) Power Dissipation
θθ
θθ
θ
jc
θθ
θθ
θ
ja
IDR*I
DRM
@ TA = 25°C °C/W °C/W
TO-92 175mA 500mA 0.74W 125 170 175mA 500mA
TO-243AA 200mA 500mA 1.6
†
15 78
†
200mA 500mA
*
ID (continuous) is limited by max rated Tj.
†
Mounted on FR4 board, 25mm x 25mm x 1.57mm. Significant P
D
increase possible on ceramic substrate.
Electrical Characteristics (@ 25°C unless otherwise specified)
DN2530
Thermal Characteristics
Switching Waveforms and Test Circuit
Ω
Page 3
3
Typical Performance Curves
Output Characteristics
1.0
0.8
0.6
0.4
0.2
0
050
100
150
200 250
VDS (volts)
I
D
(amperes)
Transconductance vs. Drain Current
I
D
(amperes)
Power Dissipation vs. Case Temperature
0 15010050 1257525
TO-92
TO-243AA
VGS = 1.0V
0.5V
-0.5V
-1.0V
-1.5V
0V
Saturation Characteristics
0.25
0.2
0.15
0.1
0.05
0
2.0
1.6
1.2
0.8
0.4
0
0123 54
VGS = 1.0V
-1.5V
0.5V
0V
-0.5V
-1.0V
Maximum Rated Safe Operating Area
1 100010010
1
0.1
0.01
0.001
V
DS
(volts)
I
D
(amperes)
TO-92 (pulsed)
TC = 25°C
TO-92 (DC)
Thermal Response Characteristics
Thermal Resistance (normalized)
1.0
0.8
0.6
0.4
0.2
0.001 100.01 0.1 1
tp (seconds)
0
TO-243AA
TA = 25°C
P
D
= 1.6W
0.5
0.4
0.3
0.2
0.1
0
0 0.250.05 0.1 0.15 0.2
V
DS
= 10V
TA = -55°C
TA = 25°C
TA = 125°C
TO-92
TC = 25°C
P
D
= 1.0W
I
D
(amperes)
VDS (volts)
G
FS
(siemens)
TC (°C)
P
D
(watts)
DN2530
Page 4
4
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
www.supertex.com
12/13/01
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
BV
DSS
Variation with Temperature
BV
DSS
(normalized)
1.1
1.05
1.0
0.95
0.9
0.85
-50 0 0.2 0.4 0.6 0.8 1.00
50
100
150
Transfer Characteristics
T
j
(°C)
V
GS
(Volts)
V
DS
(Volts)
I
D
(amperes)
1.0
0.8
0.6
0.4
0.2
0
-2
-1
0
12
Capacitance Vs. Drain-to-Source Voltage
C (picofarads)
200
150
100
50
0
010
20
30
40
VGS = -5V
I
D
= 100µA
VGS = 0V
VDS = 10V
VGS = -10V
C
OSS
C
RSS
C
ISS
TA = -55°C
TA = 25°C
R
DS (ON)
@ ID = 150mA
V
GS(OFF)
@ 10µA
V
DS
= 40V
TA = 125°C
On-Resistance vs. Drain Current
50
40
30
20
10
0
ID (amps)
Q
C
(Nanocoulombs)
R
DS(on)
(ohms)
-50 0 50 100 150
012345
VGS (Off) and RDS Variation with Temperature
2.5
2
1.5
1
0.5
0
15
10
5
0
-5
Tj (°C)
V
GS(th)
(normalized)
Gate Drive Dynamic Characteristics
V
GS
(volts)
V
DS
= 20V
250pF
152pf
Typical Performance Curves
DN2530
Loading...