Datasheet 2N2484 Datasheet (Microsemi Corporation)

Page 1
Features
Meets MIL 19500 /376
Collector - Base Voltage 60 V
Collector - Current 50 mA
High Speed, Low Power Bipolar Transistor
TO-18
580 Pleasant St. Watertown, MA 02172 PH: (617) 926-0404 FAX: (617) 924-1235
2N2484
SWITCHING
TRANSISTOR
JAN, JANTX, JANTXV
SMALL SIGNAL
BIPOLAR
NPN SILICON
Maximum Ratings
P
P
CEO CBO EBO
C D
D
stg
-65 to +200
60 Vdc 60 Vdc
6 Vdc
50 mAdc
360 mW
2.06
1.2 WATTS
6.85
mW/°C
mW/°C
°C
Thermal Characteristics
MSCO280A 06-10-98 DSW2N2484 <-> (34285)
Rθ JA
485
°C/W
Page 2
2N2484
Electrical Characteristics (TA = 25°C unless otherwise noted)
OFF CHARACTERISTIC SYMBOL MIN MAX UNIT Collector - Emitter Breakdown Voltage (1) V(BR)
( IC = 10 mAdc, IB = 0 ) 60 Vdc
Collector - Base Breakdown Voltage V(BR)
( IC = 10 µAdc, IE = 0 )
Emitter - Base Breakdown Voltage V(BR)
( IE = 10 µAdc, IC = 0 ) Collector - Base Cutoff Current I ( VCB= 45 Vdc IE = 0 ) 5 nAdc ( VCB= 45 Vdc IE = 0 , TA = 150°C ) Collector - Emitter Cutoff Current I
( VCE = 5 Vdc, IB = 0 ) 2 nAdc Collector - Emitter Cutoff Current I
( VCE = 45 Vdc, VBE = 0 ) 5 nAdc Emitter - Base Cutoff Current I
( VEB = 5 Vdc ) 2 nAdc
CBO
CEO
CES
EBO
CEO
CBO
EBO
60 Vdc
6 Vdc
10
µAdc
ON CHARACTERISTIC SYMBOL MIN MAX UNIT DC Current Gain h
( IC = 1 µAdc V ( IC = 10 µAdc, V ( IC = 100µAdc, V ( IC= 500µAdc, V ( I
= 1 mAdc, V
C
( IC = 10 mAdc, V ( IC = 10 µAdc, V
= 5 Vdc )
CE
= 5 Vdc )
CE
= 5 Vdc )
CE
= 5 Vdc )
CE
= 5 Vdc ) 250 800
CE
= 5 Vdc ) 225 800
CE
= 5 Vdc, TJ = -55°C )
CE
Collector- Emitter Saturation Voltage V
( IC = 1 mAdc, IB = 100 µAdc )
Base - Emitter Non-Saturated Voltage V
( IC = 100 µAdc, V
= 5 Vdc )
CE
FE
45 200 500 225 675 250 800
35
CE ( s a t )
0.3 Vdc
BE ( o n )
0.5 0.7 Vdc
1. Pulse Test: Pulse Width 300 µs, Duty Cycle ≤.2%
MSCO280A 06-10-98 DSW2N2484 <-> (34285)
Page 3
2N2484
Electrical Characteristics (TA = 25°C unless otherwise noted)
SMALL - SIGNAL CHARACTERISTICS SYMBOL MIN MAX UNIT Output Capacitance C
( V
= 5 Vdc, IE = 0, 100kHz f 1 MHz )
CB
Input Capacitance C
( V
= 0.5 Vdc, IC = 0, 100kHz f 1 MHz )
EB
Small - Signal AC Characteristics (TA = 25°C)
LOW FREQUENCY SYMBOL MIN MAX UNIT Common - Emitter Forward Current Transfer Ratio h ( IC = 1 mA, VCE = 5 V, f = 1 kHz ) 250 900 Common - Emitter Short Circuit Input Impedance h ( IC = 1 mA, VCE = 5 V, f = 1 kHz ) 3.5 24 Common - Emitter Open Circuit Output Admittance h ( IC = 1 mA, VCE = 5 V, f = 1 kHz ) 40 Common-Emitter Open Circuit Reverse Voltage Transfer Ratio h ( IC = 1 mA, VCE = 5 V, f = 1 kHz ) 8.0x10 HIGH FREQUENCY AND NOISE Magnitude of Common Emitter Short Circuit Forward Current Transfer Ratio ( IC = 50 µA, VCE = 5 V, f = 5 MHz ) ( IC = 500 µA, VCE = 5 V, f = 30 MHz ) Noise Figure F ( IC = 10µAdc, VCE 5 Vdc, RG = 10k, f = 100Hz ) Noise Figure F ( IC = 10µAdc, VCE 5 Vdc, RG = 10k, f = 1 kHz ) Noise Figure F ( IC = 10µAdc, VCE 5 Vdc, RG = 10k, f = 10 kHz ) Wide Band Noise Figure F ( IC = 10µAdc , VCE 5 Vdc , RG = 10 kHz , f = 10 Hz to 15.7 kHz ) 3.0 dB
obo
ibo
fe
ie
oe
re
hfe
1
2
3
4
5 pF
6 pF
k
µmhos
-4
3.0
2.0 7.0
7.5 dB
3.0 dB
2.0 dB
S p i c e M o d e l (based upon typical device characteristics)
* 1
Q2N2484 NPN ( IS = 66.4p XTI = 2.0m EG = 1.11 VAF = 73.1 BF = 660.0 ISE = 48.8n + NE = 46.13 IKF = 8.98µ NK = 0.123 XTB = 1.5 BR = 1.0 ISC = 66.4p + NC = 2.51 IKR = 1.23 RC = 0.738 CJC = 4.74p VJC= 0.933 MJC = 0.35
+ FC = 0.5 CJE = 6.0p VJE = 0.6 MJE = 0.34 TR = 25.96n TF = 1.918n
+ ITF = 1.0 XTF = 0 VTF = 10.0 )
*1. Microsemi Corp. claims no responsibility for misapplication of Spice Model information. Spice modeling should be used as a precursor guide to in-circuit performance. Actual performance is the responsibility of the user / designer.
MSCO280A 06-10-98 DSW2N2484 <-> (34285)
Page 4
2N2484
TO 18 CASE OUTLINE
DIE CHARACTERISTICS
Back is Collector
Chip Thickness is:
10 MILS TYP
Metalization is:
Top = Al, Back = Au
DIE OUTLINE
MSCO280A 06-10-98 DSW2N2484 <-> (34285)
Page 5
1000
2N2484
DC CURRENT GAIN
TJ = 25 C VCE = 5
1000
typ
100
hFE, CURRENT GAIN
10
-6
10
-5
10
IC, COLLECTOR CURRENT (A)
-4
10
FIGURE 1
COLLECTOR SATURATION vs BASE CURRENT
TJ = 25 C
1.0
0.8
100
-3
10
10
-2
10
1.0
0.8
0.6
IC = 1 mA
0.4
0.2
0.0
VCE, COLLECTOR-EMITTER (V)
-5
10
-4
10
IB, BASE CURRENT (A)
-3
10
0.6
0.4
0.2
0.0
-2
10
FIGURE 2
MSCO280A 06-10-98 DSW2N2484 <-> (34285)
Page 6
2N2484
JUNCTION CAPACITANCE
TJ = 25 C 100 kHz < f < 1 MHz
8
8
6
CIBO
4
COBO
2
Junction Capacitance (pF)
0
.1 1 10
Reverse Junction Voltage (V)
FIGURE 3
SMALL SIGNAL CURENT GAIN vs COLLECTOR CURRENT
TJ = 25 C VCE = 5 V f = 1kHz
1000
6
4
2
0
1000
800
typ.
600
400
200
0
.01 .1 1 10
SMALL SIGNAL CURRENT GAIN, hfe
COLLECTOR CURRENT (mA)
800
600
400
200
0
FIGURE 4
MSCO280A 06-10-98 DSW2N2484 <-> (34285)
Page 7
2N2484
HIGH FREQUENCY GAIN
TJ = 25 C VCE = 5 V f = 30 MHz
25
25
20
15
typ.
10
5
HIGH FREQUENCY GAIN | hfe |
0
.1 1 10
COLLECTOR CURRENT (mA)
FIGURE 5
GAIN vs FREQUENCY
TJ = 25 C IC = 500 uA VCE = 5 V
10
20
15
10
5
0
10
8
6
| hfe |
4
2
0
1 10 100
typ
8
6
4
2
0
Frequency (MHz)
FIGURE 6
MSCO280A 06-10-98 DSW2N2484 <-> (34285)
Page 8
INPUT IMPEDANCE vs COLLECTOR CURRENT
TJ = 25 C VCE = 5 V f = 1 kHz
3
10
2N2484
3
10
2
10
1
10
hie (k-ohms)
0
10
.1 1 10 100
typ.
IC (mA)
FIGURE 7
OUTPUT ADMITTANCE vs COLLECTOR CURRENT
TJ = 25 C VCE = 5 V f = 1 kHz
1000
10
10
10
1000
2
1
0
100
hoe (uS)
10
1
.1 1 10 100
typ.
100
10
1
IC (mA)
FIGURE 8
MSCO280A 06-10-98 DSW2N2484 <-> (34285)
Page 9
VOLTAGE FEEDBACK RATIO vs COLLECTOR CURRENT
TJ = 25 C VCE = 5 V f = 1kHz
100
2N2484
100
10
1
.1 1 10 100
VOLTAGE FEEDBACE RATIO, hre (x 1E-4)
COLLECTOR CURRENT (mA)
FIGURE 9
NOISE FIGURE (db) VS COLLECTOR CURRENT
TJ = 25 C VCE = 5 V RG = 10 k f = 1 kHz
10
10
typ.
1
10
typ.
1
1
NOISE FIGURE (db)
.1
-5
10
COLLECTOR CURRENT (A)
-4
10
.1
-3
10
FIGURE 10
MSCO280A 06-10-98 DSW2N2484 <-> (34285)
Page 10
NOISE FIGURE (dB) VS SOURCE RESISTANCE
TJ = 25 C VCE = 5 V IC = 10 uA f = 100 Hz
10
2N2484
10
8
6
4
2
NF, NOISE FIGURE (dB)
0
2
10
RG, SOURCE RESISTANCE (OHMS)
3
10
FIGURE 11
8
6
4
2
4
10
0
5
10
MSCO280A 06-10-98 DSW2N2484 <-> (34285)
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