Datasheet 2N2484 Datasheet (Microsemi Corporation)

Features

• Meets MIL 19500 /376

• Collector - Base Voltage 60 V

• Collector - Current 50 mA

• High Speed, Low Power Bipolar Transistor

TO-18

580 Pleasant St. Watertown, MA 02172 PH: (617) 926-0404 FAX: (617) 924-1235

2N2484

SWITCHING

TRANSISTOR

JAN, JANTX, JANTXV

SMALL SIGNAL

BIPOLAR

NPN SILICON

Maximum Ratings

RATING SYMBOL VALUE UNIT Collector - Emitter Voltage V Collector - Base Voltage V Emitter - Base Voltage V Collector Current - Continuous I Total Device Dissipation @ TA = 25 °C Derate above 25 °C Total Device Dissipation @ TC = 25 °C Derate above 25 °C Operating Junction&Storage Temperature Range TJ, T

P

CEO CBO EBO

C D

D

stg

-65 to +200

60 Vdc 60 Vdc

6 Vdc

50 mAdc

360 mW

2.06

1.2 WATTS

6.85

mW/°C

°C

Thermal Characteristics

CHARACTERISTIC SYMBOL MAX UNIT Thermal Resistance, Junction to Ambient

MSCO280A 06-10-98 DSW2N2484 <-> (34285)

Rθ JA

485

°C/W

2N2484

Electrical Characteristics (TA = 25°C unless otherwise noted)

OFF CHARACTERISTIC SYMBOL MIN MAX UNIT Collector - Emitter Breakdown Voltage (1) V(BR)

( IC = 10 mAdc, IB = 0 ) 60 Vdc

Collector - Base Breakdown Voltage V(BR)

( IC = 10 µAdc, IE = 0 )

Emitter - Base Breakdown Voltage V(BR)

( IE = 10 µAdc, IC = 0 ) Collector - Base Cutoff Current I ( VCB= 45 Vdc IE = 0 ) 5 nAdc ( VCB= 45 Vdc IE = 0 , TA = 150°C ) Collector - Emitter Cutoff Current I

( VCE = 5 Vdc, IB = 0 ) 2 nAdc Collector - Emitter Cutoff Current I

( VCE = 45 Vdc, VBE = 0 ) 5 nAdc Emitter - Base Cutoff Current I

( VEB = 5 Vdc ) 2 nAdc

CBO

CEO

CES

EBO

CEO

CBO

EBO

60 Vdc

6 Vdc

10

µAdc

ON CHARACTERISTIC SYMBOL MIN MAX UNIT DC Current Gain h

( IC = 1 µAdc V ( IC = 10 µAdc, V ( IC = 100µAdc, V ( IC= 500µAdc, V ( I

= 1 mAdc, V

C

( IC = 10 mAdc, V ( IC = 10 µAdc, V

= 5 Vdc )

CE

= 5 Vdc )

CE

= 5 Vdc )

CE

= 5 Vdc )

CE

= 5 Vdc ) 250 800

CE

= 5 Vdc ) 225 800

CE

= 5 Vdc, TJ = -55°C )

CE

Collector- Emitter Saturation Voltage V

( IC = 1 mAdc, IB = 100 µAdc )

Base - Emitter Non-Saturated Voltage V

( IC = 100 µAdc, V

= 5 Vdc )

CE

FE

45 200 500 225 675 250 800

35

CE ( s a t )

0.3 Vdc

BE ( o n )

0.5 0.7 Vdc

1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤.2%

MSCO280A 06-10-98 DSW2N2484 <-> (34285)

2N2484

Electrical Characteristics (TA = 25°C unless otherwise noted)

SMALL - SIGNAL CHARACTERISTICS SYMBOL MIN MAX UNIT Output Capacitance C

( V

= 5 Vdc, IE = 0, 100kHz ≤ f ≤ 1 MHz )

CB

Input Capacitance C

( V

= 0.5 Vdc, IC = 0, 100kHz ≤ f ≤ 1 MHz )

EB

Small - Signal AC Characteristics (TA = 25°C)

LOW FREQUENCY SYMBOL MIN MAX UNIT Common - Emitter Forward Current Transfer Ratio h ( IC = 1 mA, VCE = 5 V, f = 1 kHz ) 250 900 Common - Emitter Short Circuit Input Impedance h ( IC = 1 mA, VCE = 5 V, f = 1 kHz ) 3.5 24 Common - Emitter Open Circuit Output Admittance h ( IC = 1 mA, VCE = 5 V, f = 1 kHz ) 40 Common-Emitter Open Circuit Reverse Voltage Transfer Ratio h ( IC = 1 mA, VCE = 5 V, f = 1 kHz ) 8.0x10 HIGH FREQUENCY AND NOISE Magnitude of Common Emitter Short Circuit Forward Current Transfer Ratio ( IC = 50 µA, VCE = 5 V, f = 5 MHz ) ( IC = 500 µA, VCE = 5 V, f = 30 MHz ) Noise Figure F ( IC = 10µAdc, VCE 5 Vdc, RG = 10kΩ, f = 100Hz ) Noise Figure F ( IC = 10µAdc, VCE 5 Vdc, RG = 10kΩ, f = 1 kHz ) Noise Figure F ( IC = 10µAdc, VCE 5 Vdc, RG = 10kΩ, f = 10 kHz ) Wide Band Noise Figure F ( IC = 10µAdc , VCE 5 Vdc , RG = 10 kHz , f = 10 Hz to 15.7 kHz ) 3.0 dB

obo

ibo

fe

ie

oe

re

 hfe

1

2

3

4

5 pF

6 pF

kΩ

µmhos

-4

3.0

2.0 7.0

7.5 dB

3.0 dB

2.0 dB

S p i c e M o d e l (based upon typical device characteristics)

* 1

Q2N2484 NPN ( IS = 66.4p XTI = 2.0m EG = 1.11 VAF = 73.1 BF = 660.0 ISE = 48.8n + NE = 46.13 IKF = 8.98µ NK = 0.123 XTB = 1.5 BR = 1.0 ISC = 66.4p + NC = 2.51 IKR = 1.23 RC = 0.738 CJC = 4.74p VJC= 0.933 MJC = 0.35

+ FC = 0.5 CJE = 6.0p VJE = 0.6 MJE = 0.34 TR = 25.96n TF = 1.918n

+ ITF = 1.0 XTF = 0 VTF = 10.0 )

*1. Microsemi Corp. claims no responsibility for misapplication of Spice Model information. Spice modeling should be used as a precursor guide to in-circuit performance. Actual performance is the responsibility of the user / designer.

MSCO280A 06-10-98 DSW2N2484 <-> (34285)

2N2484

TO 18 CASE OUTLINE

DIE CHARACTERISTICS

Back is Collector

Chip Thickness is:

10 MILS TYP

Metalization is:

Top = Al, Back = Au

DIE OUTLINE

MSCO280A 06-10-98 DSW2N2484 <-> (34285)

1000

2N2484

DC CURRENT GAIN

TJ = 25 C VCE = 5

1000

typ

100

hFE, CURRENT GAIN

10

-6

10

-5

10

IC, COLLECTOR CURRENT (A)

-4

10

FIGURE 1

COLLECTOR SATURATION vs BASE CURRENT

TJ = 25 C

1.0

0.8

100

-3

10

-2

10

1.0

0.8

0.6

IC = 1 mA

0.4

0.2

0.0

VCE, COLLECTOR-EMITTER (V)

-5

10

-4

10

IB, BASE CURRENT (A)

-3

10

0.6

0.4

0.2

0.0

-2

10

FIGURE 2

MSCO280A 06-10-98 DSW2N2484 <-> (34285)

2N2484

JUNCTION CAPACITANCE

TJ = 25 C 100 kHz < f < 1 MHz

8

6

CIBO

4

COBO

2

Junction Capacitance (pF)

0

.1 1 10

Reverse Junction Voltage (V)

FIGURE 3

SMALL SIGNAL CURENT GAIN vs COLLECTOR CURRENT

TJ = 25 C VCE = 5 V f = 1kHz

1000

6

4

2

0

1000

800

typ.

600

400

200

0

.01 .1 1 10

SMALL SIGNAL CURRENT GAIN, hfe

COLLECTOR CURRENT (mA)

800

600

400

200

0

FIGURE 4

MSCO280A 06-10-98 DSW2N2484 <-> (34285)

2N2484

HIGH FREQUENCY GAIN

TJ = 25 C VCE = 5 V f = 30 MHz

25

20

15

typ.

10

5

HIGH FREQUENCY GAIN | hfe |

0

.1 1 10

COLLECTOR CURRENT (mA)

FIGURE 5

GAIN vs FREQUENCY

TJ = 25 C IC = 500 uA VCE = 5 V

10

20

15

10

5

0

10

8

6

| hfe |

4

2

0

1 10 100

typ

8

6

4

2

0

Frequency (MHz)

FIGURE 6

MSCO280A 06-10-98 DSW2N2484 <-> (34285)

INPUT IMPEDANCE vs COLLECTOR CURRENT

TJ = 25 C VCE = 5 V f = 1 kHz

3

10

2N2484

3

10

2

10

1

10

hie (k-ohms)

0

10

.1 1 10 100

typ.

IC (mA)

FIGURE 7

OUTPUT ADMITTANCE vs COLLECTOR CURRENT

TJ = 25 C VCE = 5 V f = 1 kHz

1000

10

1000

2

1

0

100

hoe (uS)

10

1

.1 1 10 100

typ.

100

10

1

IC (mA)

FIGURE 8

MSCO280A 06-10-98 DSW2N2484 <-> (34285)

VOLTAGE FEEDBACK RATIO vs COLLECTOR CURRENT

TJ = 25 C VCE = 5 V f = 1kHz

100

2N2484

100

10

1

.1 1 10 100

VOLTAGE FEEDBACE RATIO, hre (x 1E-4)

COLLECTOR CURRENT (mA)

FIGURE 9

NOISE FIGURE (db) VS COLLECTOR CURRENT

TJ = 25 C VCE = 5 V RG = 10 k f = 1 kHz

10

typ.

1

10

typ.

1

NOISE FIGURE (db)

.1

-5

10

COLLECTOR CURRENT (A)

-4

10

.1

-3

10

FIGURE 10

MSCO280A 06-10-98 DSW2N2484 <-> (34285)

NOISE FIGURE (dB) VS SOURCE RESISTANCE

TJ = 25 C VCE = 5 V IC = 10 uA f = 100 Hz

10

2N2484

10

8

6

4

2

NF, NOISE FIGURE (dB)

0

2

10

RG, SOURCE RESISTANCE (OHMS)

3

10

FIGURE 11

8

6

4

2

4

10

0

5

10

MSCO280A 06-10-98 DSW2N2484 <-> (34285)