
Prod uct Bul le tin JANTX, JANTXV, 2N2222AUA
Sep tem ber 1996
Surface Mount NPN General Purpose Transistor
Types JANTX, JANTXV, 2N2222AUA
Fea tures
• Ceramic surface mount package
• Small package to minimize circuit
board area
• Hermetically sealed
• Qualification per MIL-PRF-19500/255
De scrip tion
The JANTX/TXV2N2222AUA is a
hermetically sealed ceramic surface
mount general purpose switching
transistor. The four pin ceramic
package is ideal for designs where board
space and device weight are important
design considerations. The “UA” suffix
denotes the 4 terminal leadless chip
carrier package, type “A” per MIL-PRF19500/255.
Typical screening and lot acceptance
tests are provided on page 13-4. The
burn-in condition is VCB = 30 V. PD =
400 mW, TA = 25o C, t = 80 hrs. Refer to
MIL-PRF-19500/255 for complete
requirements. In addition, the TX and
TXV versions receive 100% thermal
response testing.
Ab so lute Maxi mum Rat ings (TA = 25o C un less oth er wise noted)
Collector- Base Volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75 V
Collector- Emitter Volt age. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 V
Emitter- Base Volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.0 V
Col lec tor Current- Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800 mA
Op er at ing Junc tion Tem pera ture (TJ). . . . . . . . . . . . . . . . . . . . . . . . -65o C to +200o C
Stor age Junc tion Tem pera ture (T
Power Dis si pa tion @ TA = 25o C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5 W
Power Dis si pa tion @ TC = 25o C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.16 W
Sol der ing Tem pera ture (va por phase re flow for 30 sec.) . . . . . . . . . . . . . . . . . 215o C
Sol der ing Tem pera ture (heated collet for 5 sec.) . . . . . . . . . . . . . . . . . . . . . . . 260o C
Notes:
(1) Der ate line arly 6.6 mW/o C above 25o C.
) . . . . . . . . . . . . . . . . . . . . . . . . -65o C to +200o C
stg
(1)
When ordering parts without processing,
do not use a JAN prefix.
Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972)323-2200 Fax (972)323-2396
15-4

Types JANTX, JANTXV, 2N2222AUA
Elec tri cal Char ac ter is tics (TA = 25o C un less oth er wise noted)
SYM BOL PA RAME TER MIN MAX UNITS TEST CON DI TION
Off Char ac ter is tics
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
I
CES
On Char ac ter is tics
h
FE
V
CE(SAT)
V
BE(SAT)
Small- Signal Char ac ter is tics
h
Ih
C
obo
C
ibo
Switch ing Char ac ter is tics
t
on
t
off
(2) Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Collector-Base Breakdown Voltage 75 V
IC = 10 µA, IE = 0
Collector-Emitter Breakdown Voltage 50 V IC = 10 mA, IB = 0
Emitter-Base Breakdown Voltage 6.0 V
IE = 10 µA, IC = 0
Collector-Base Cutoff Current 10 nA VCB = 60 V, IE = 0
10
VCB = 60 V, IE = 0, TA = 150o C
µA
Emitter-Base Cutoff Current 10 nA VEB = 4 V, IC = 0
Collector-Emitter Cutoff Current 50 nA VCE = 50 V
Forward-Current Transfer Ratio 50 - VCE = 10 V, IC = 0.1 mA
75 325 - VCE = 10 V, IC = 1.0 mA
100 - VCE = 10 V, IC = 10 mA
100 300 - VCE = 10 V, IC = 150 mA
30 - VCE = 10 V, IC = 500 mA
35 - VCE = 10 V, IC = 10 mA, TA = -55o C
Collector-Emitter Saturation Voltage 0.3 V IC = 150 mA, IB = 15 mA
1.0 V IC = 500 mA, IB = 50 mA
Base-Emitter Saturation Voltage 0.6 1.2 V IC = 150 mA, IB = 15 mA
2.0 V IC = 500 mA, IB = 50 mA
Small Signal Forward Current Transfer
fe
50 - VCE = 10 V, IC = 1.0 mA, f = 1.0 kHz
Ratio
Small Signal Forward Current Transfer
fe
2.5 - VCE = 20 V, IC = 20 mA, f = 100 MHz
Ratio
Open Circuit Output Capacitance 8.0 pF
Input Capacitance (Output Open) 25 pF
VCB = 10 V, 100 kHz ≤ f ≤ 1.0 MHz
VEB = 0.5 V, 100 kHz ≤ f ≤ 1.0 MHz
Turn-On Time 35 ns VCC = 30 V, IC = 150 mA, IB1 = 15 mA
Turn-Off Time 300 ns VCC = 30 V, IC = 150 mA, IB1 = I
(2)
(2)
(2)
(2)
(2)
(2)
= 15 mA
B2
Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972)323-2200 Fax (972)323-2396
15-5