Datasheet 2N2221A Datasheet (Microsemi Corporation)

Features

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Watertown, MA 02172
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2N2221A

• Meets MIL 19500 /255

• Collector - Base Voltage 75 V

• Collector - Current 800 mA

• High Speed, Medium Current Bipolar Transistor

TO-18

SWITCHING

TRANSISTOR

JAN, JANTX, JANTXV

SMALL SIGNAL

BIPOLAR

NPN SILICON

COLLECTOR

BASE

EMITTER

Maximum Ratings

RATING SYMBOL VALUE UNIT
Collector - Emitter Voltage V
Collector - Base Voltage V
Emitter - Base Voltage V
Collector Current -- Continuous I
Total Device Dissipation @ TA = 25 °C

Derate above 25 °C

Total Device Dissipation @ TC = 25 °C

Derate above 25 °C

Operating Junction&Storage Temperature Range TJ, T

P

P

CEO
CBO
EBO

C
D

D

stg

- 65 to + 200

50 Vdc
75 Vdc

6 Vdc
800 mAdc
500 mW

2.85

1.8 WATTS

10.3

mW/°C

mW/°C

°C

Thermal Characteristics

CHARACTERISTIC SYMBOL MAX UNIT
Thermal Resistance, Junction to Ambient

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Rθ JA

350

°C/W

2N2221A

Electrical Characteristics (TA = 25°C unless otherwise noted)

OFF CHARACTERISTIC SYMBOL MIN MAX UNIT
Collector - Emitter Breakdown Voltage (1) V(BR)

( IC = 10 mA dc, IB = 0 ) 50 Vdc

Collector - Base Breakdown Voltage (1) V(BR)

( IC = 10 µAdc, IE = 0 )

Emitter - Base Breakdown Voltage (1) V(BR)

( IE = 10 µAdc, IC = 0 )

Collector - Emitter Cutoff Current I

( V

= 50 Vdc, V

CE

= 0 V ) 50 nAdc

BE(off)

Collector - Base Cutoff Current I

( VCB = 60 Vdc, IE = 0 ) 10 nAdc
( VCB = 60 Vdc, IE = 0, TA = 150 °C )

Emitter - Base Cutoff Current I

( VEB = 4 Vdc ) 10 nAdc

ON CHARACTERISTIC SYMBOL MIN MAX UNIT
DC Current Gain h

( IC = 100 µA dc, V
( IC = 1 mA dc, V
( IC = 10 mA dc, V
( IC = 150 mA dc, V
( IC = 500 mA dc, V
( IC = 10 mA dc, V

= 10 Vdc )

CE

= 10 Vdc ) 35 150

CE

= 10 Vdc ) 40

CE

= 10 Vdc ) (1) 40 120

CE

= 10 Vdc ) (1) 20

CE

= 10 Vdc, TJ = -55°C )

CE

Collector - Emitter Saturation Voltage V

( IC = 150 mAdc, IB = 15 mAdc ) (1) 0.3 Vdc
( IC = 500 mAdc, IB = 50 mAdc ) (1) 1.0 Vdc

Base - Emitter Saturation Voltage V

( IC = 150 mAdc, IB = 15 mAdc ) (1) 0.6 1.2 Vdc
( IC = 500 mAdc, IB = 50 mAdc ) (1) 2.0 Vdc

CES

CBO

EBO

FE

CE(sat)

BE(sat)

CEO

CBO

EBO

75 Vdc

6 Vdc

10

µAdc

30

15

1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

MSCO328A 01-29-98 DSW2N2221A < - > ( 33807)

2N2221A

Electrical Characteristics (TA = 25°C unless otherwise noted)

SMALL - SIGNAL CHARACTERISTICS SYMBOL MIN MAX UNIT
Output Capacitance C

( V

= 10 Vdc, IE = 0, 100kHz ≤ f ≤ 1 MHz )

CB

Input Capacitance C

( V

= 0.5 Vdc, IC = 0, 100kHz ≤ f ≤ 1 MHz )

EB

SWITCHING CHARACTERISTICS SYMBOL MIN MAX UNIT
Turn - On Time t

( VCC = 30 Vdc, IC = 150 mAdc,
IB1 =15 mAdc) ( See FIGURE 1 ) 35 ns
Turn - Off Time t

( VCC = 30 Vdc, IC = 150 mAdc,
IB1 = - IB2 = 15 mAdc) ( See FIGURE 2 ) 300 ns

Small - Signal AC Characteristics (TA = 25°C)

LOW FREQUENCY SYMBOL MIN MAX UNIT
Common - Emitter Forward Current Transfer Ratio h
(IC = 1 mA, VCE = 10 V, f = 1kHz) 30
HIGH FREQUENCY
Common - Emitter Forward Current Transfer Ratio |hfe|
(IC = 20 mA, VCE = 20 V, f = 100 MHz) 2.5

obo

8 pF

ibo

25 pF

on

off

fe

S p i c e M o d e l (based upon typical device characteristics)

* 1

Q2N2221A NPN ( IS = 426.3f XTI = 3.0 EG = 1.11 VAF =250.3 BF = 72.14 ISE = 48.14p
+ NE = 2.935 IKF = 2.935 NK = 1.401 XTB = 1.5 BR = 11.49 ISC = 19.9f
+ NC = 1.88 IKR = 10.75 RC = 0.3567 CJC = 11.02p VJC = 0.3869 MJC = 0.3292
+ FC = 0.5 CJE = 29.31p VJE = 0.9036 MJE = 0.4101 TR = 16.89n TF = 537.5p
+ ITF = 0.1383 XTF = 84.83m VTF=10 )

*1. Microsemi Corp. claims no responsibility for misapplication of Spice Model information. Spice modeling should be
used as a precursor guide to in-circuit performance. Actual performance is the responsibility of the user/designer.

MSCO328A 01-29-98 DSW2N2221A < - > ( 33807)

2N2221A

TO 18 CASE OUTLINE

19.8 MIL TYP
SQUARE

DIE CHARACTERISTICS

(B)

(E)

Back is Collector

Chip Thickness is:
10 MILS TYP

Metalization is:
Top = Al, Back = Au

DIE OUTLINE

MSC0328A 11-10-97 DSW2N2221A< - > (33807)

2N2221A

FIGURE 1 Saturated Turn-on Time Test Circuit

FIGURE 2 Saturated Turn-off Time Test Circuit

MSC0328A 11-10-97 DSW2N2221A< - > (33807)

150

2N2221A

DC CURRENT GAIN

TJ = 25 C VCE = 10 V

150

125

typ.

100

75

50

hFE CURRENT GAIN

25

0

-4

10

-3

10

IC COLLECTOR CURRENT (A)

-2

10

FIGURE 3

COLLECTOR SATURATION vs BASE CURRENT

TJ = 25 C

1.0

125

100

75

50

25

-1

10

0

0

10

1.0

0.8

IC = 10 mA

0.6

0.4

0.2

0.0

VCE, COLLECTOR-EMITTER (V)

-5

10

-4

10

IB, BASE CURRENT (A)

IC = 150 mA

-3

10

10

IC = 500 mA

-2

-1

10

0.8

0.6

0.4

0.2

0.0

0

10

FIGURE 4

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BASE SATURATION vs BASE CURRENT

TJ = 25 C

1.2

2N2221A

1.2

1.1

1.0

0.9

0.8

0.7

0.6

VBE, BASE-EMITTER (V)

0.5

-5

10

IC = 10 mA

-4

10

IB, BASE CURRENT (A)

10

-3

IC = 150 mA

10

FIGURE 5

JUNCTION CAPACITANCE

TJ = 25 C 100 kHz < f < 1 MHz

30

IC = 500 mA

-2

1.1

1.0

0.9

0.8

0.7

0.6

-1

10

0.5

0

10

25

CIBO

20

15

10

5

0

JUNCTION CAPACITANCE (pF)

.1 1 10 100

COBO

REVERSE JUNCTION VOLTAGE (V)

FIGURE 6

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SMALL SIGNAL CURENT GAIN vs COLLECTOR CURRENT

TJ = 25 C VCE = 10 V f = 1kHz

150

150

2N2221A

140

130

120

110

100

.1 1 10 100

SMALL SIGNAL CURRENT GAIN, hfe

COLLECTOR CURRENT (mA)

FIGURE 7

HIGH FREQUENCY GAIN

TJ = 25 C VCE = 20 V f = 100 MHz

5

140

typ.

130

120

110

100

5

4

3

typ.

2

1

HIGH FREQUENCY GAIN | hfe |

0

1 10 100

4

3

2

1

0

COLLECTOR CURRENT (mA)

FIGURE 8

MSC0328A 11-10-97 DSW2N2221A< - > (33807)

2N2221A

GAIN vs FREQUENCY

TJ = 25 C IC = 20 mA VCE = 20 V

40

40

30

20

10

typ.

HIGH FREQUENCY GAIN | hfe |

0

10 100 1000

FREQUENCY (MHz)

FIGURE 9

30

20

10

0

MSC0328A 11-10-97 DSW2N2221A< - > (33807)