Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D111
2N2219; 2N2219A
NPN switching transistors
Product specification
Supersedes data of 1997 May 07
File under Discrete Semiconductors, SC04
1997 Sep 03
Page 2
Philips Semiconductors Product specification
NPN switching transistors 2N2219; 2N2219A
FEATURES
• High current (max. 800 mA)
• Low voltage (max. 40 V).
PINNING
PIN DESCRIPTION
1 emitter
2 base
APPLICATIONS
3 collector, connected to case
• High-speed switching
• DC and VHF/UHF amplification, for 2N2219 only.
handbook, halfpage
1
2
DESCRIPTION
NPN switching transistor in a TO-39 metal package.
PNP complement: 2N2905 and 2N2905A.
3
2
MAM317
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
2N2219 − 60 V
2N2219A − 75 V
V
CEO
collector-emitter voltage open base
2N2219 − 30 V
2N2219A − 40 V
I
C
P
tot
h
FE
f
T
collector current (DC) − 800 mA
total power dissipation T
≤ 25 °C − 800 mW
amb
DC current gain IC= 10 mA; VCE=10V 75 −
transition frequency IC= 20 mA; VCE= 20 V; f = 100 MHz
2N2219 250 − MHz
2N2219A 300 − MHz
t
off
turn-off time I
= 150 mA; I
Con
= 15 mA; I
Bon
= −15 mA − 250 ns
Boff
3
1
1997 Sep 03 2
Page 3
Philips Semiconductors Product specification
NPN switching transistors 2N2219; 2N2219A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter
2N2219 − 60 V
2N2219A − 75 V
collector-emitter voltage
2N2219 open base − 30 V
2N2219A open base; IC≤ 500 mA − 40 V
emitter-base voltage open collector
2N2219 − 5V
2N2219A − 6V
collector current (DC) − 800 mA
peak collector current − 800 mA
peak base current − 200 mA
total power dissipation T
≤ 25 °C − 800 mW
amb
T
≤ 25 °C − 3W
case
storage temperature −65 +150 °C
junction temperature − 200 °C
operating ambient temperature −65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-a
th j-c
thermal resistance from junction to ambient in free air 190 K/W
thermal resistance from junction to case 50 K/W
1997 Sep 03 3
Page 4
Philips Semiconductors Product specification
NPN switching transistors 2N2219; 2N2219A
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
CBO
I
EBO
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
V
CEsat
V
CEsat
V
BEsat
V
BEsat
C
c
C
e
f
T
F noise figure I
collector cut-off current
2N2219 I
= 0; VCB=50V − 10 nA
E
I
= 0; VCB=50V; T
E
= 150 °C − 10 µA
amb
collector cut-off current
2N2219A I
= 0; VCB=60V − 10 nA
E
I
= 0; VCB=60V; T
E
= 150 °C − 10 µA
amb
emitter cut-off current IC= 0; VEB=3V − 10 nA
DC current gain IC= 0.1 mA; VCE=10V 35 −
DC current gain IC= 1 mA; VCE=10V 50 −
DC current gain IC= 10 mA; VCE=10V 75 −
DC current gain IC= 10 mA; VCE=10V; T
amb
= −55 °C
2N2219A 35 −
DC current gain IC= 150 mA; VCE= 1 V; note 1 50 −
DC current gain IC= 150 mA; VCE= 10 V; note 1 100 300
DC current gain IC= 500 mA; VCE= 10 V; note 1
2N2219 30 −
2N2219A 40 −
collector-emitter saturation voltage IC= 150 mA; IB= 15 mA; note 1
2N2219 − 400 mV
2N2219A − 300 mV
collector-emitter saturation voltage IC= 500 mA; IB= 50 mA; note 1
2N2219 − 1.6 V
2N2219A − 1V
base-emitter saturation voltage IC= 150 mA; IB= 15 mA; note 1
2N2219 − 1.3 V
2N2219A 0.6 1.2 V
base-emitter saturation voltage IC= 500 mA; IB= 50 mA; note 1
2N2219 − 2.6 V
2N2219A − 2V
collector capacitance IE=ie= 0; VCB=10V − 8pF
emitter capacitance IC=ic= 0; VEB= 500 mV
2N2219A − 25 pF
transition frequency IC= 20 mA; VCE= 20 V; f = 100 MHz;
2N2219 250 − MHz
2N2219A 300 − MHz
= 0.2 mA; VCE=5V; RS=2kΩ;
C
2N2219A − 4dB
f = 1 kHz; B = 200 Hz
1997 Sep 03 4
Page 5
Philips Semiconductors Product specification
NPN switching transistors 2N2219; 2N2219A
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Switching times (between 10% and 90% levels) for type 2N2219A; see Fig.2
t
on
t
d
t
r
t
off
t
s
t
f
turn-on time I
delay time − 15 ns
rise time − 20 ns
turn-off time − 250 ns
storage time − 200 ns
fall time − 60 ns
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
= 150 mA; I
Con
I
= −15 mA
Boff
Bon
= 15 mA;
− 35 ns
handbook, full pagewidth
oscilloscope
Vi= 9.5V; T = 500 µs; tp= 10 µs; tr=tf≤3 ns.
R1 = 68 Ω; R2 = 325 Ω; RB= 325 Ω; RC= 160 Ω.
VBB= −3.5 V; VCC= 29.5 V.
Oscilloscope: input impedance Zi=50Ω.
V
R
(probe)
450 Ω
V
i
B
R2
R1
BB
V
CC
R
C
V
o
DUT
Fig.2 Test circuit for switching times.
(probe)
450 Ω
MLB826
oscilloscope
1997 Sep 03 5
Page 6
Philips Semiconductors Product specification
NPN switching transistors 2N2219; 2N2219A
PACKAGE OUTLINE
Metal-can cylindrical single-ended package; 3 leads SOT5/11
j
B
α
1
k
2
D
1
seating plane
w
M MBM
A
b
3
a
A
D
0 5 10 mm
A L
scale
DIMENSIONS (mm are the original dimensions)
UNIT a b D D1jkLw
A
6.60
mm
6.35
OUTLINE
VERSION
SOT5/11 TO-39
5.08
0.48
9.39
8.33
0.41
9.08
IEC JEDEC EIAJ
8.18
0.85
0.75
0.95
0.75
14.2
0.2
12.7
REFERENCES
α
°
45
1997 Sep 03 6
EUROPEAN
PROJECTION
ISSUE DATE
97-04-11
Page 7
Philips Semiconductors Product specification
NPN switching transistors 2N2219; 2N2219A
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Sep 03 7
Page 8
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© Philips Electronics N.V. 1997 SCA55
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Printed in The Netherlands 117047/00/03/pp8 Date of release: 1997Sep 03 Document order number: 9397 750 02823
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