Datasheet 1N582x Datasheet (ST)

®

LOW DROP POWER SCHOTTKY RECTIFIER

MAIN PRODUCTS CHARACTERISTICS

1N582x

I

F(AV)

V

RRM

T

j

V

(max) 0.475 V

F

3A

40 V

150°C

FEATURES AND BENEFITS

VERY SMALL CONDUCTION LOSSES

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NEGLIGIBLE SWITCHING LOSSES

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EXTREMELY FAST SWITCHING

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LOW FORWARD VOLTAGE DROP

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AVALANCHE CAPABILITY SPECIFIED

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DESCRIPTION

Axial Power Schottky rectifier suited for Switch
Mode Power Supplies and high frequency DC to
DC converters. Packaged in DO-201AD these
devices are intended for use in low voltage, high
frequency inverters, free wheeling, polarity
protection and small battery chargers.

ABSOLUTE RATINGS (limiting values)

Symbol Parameter

V

RRM

I

F(RMS)

I

F(AV)

I

FSM

P

ARM

Repetitive peak reverse voltage
RMS forward current
Average forward current TL= 100°C δ= 0.5

T

= 110°C δ= 0.5

L

Surge non repetitive forward
current

Repetitive peak avalanche

tp=10ms
Sinusoidal

tp = 1µs Tj = 25°C

power

T

stg

Tj

dV/dt

Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage

DO-201AD

Value

1N5820 1N5821 1N5822

Unit

20 30 40 V

10 A

3A

33 A

80 A

1700 W

- 65 to + 150 °C
150 °C

10000 V/µs

dPtot

*:

<

dTj Rth j a

July 2003 - Ed: 3A

thermal runaway condition for a diode on its own heatsink

−1()

1/5

1N582x

THERMAL RESISTANCES

Symbol Parameter Value Unit

R

th (j-a)

R

th (j-l)

Junction to ambient
Junction to lead

STATIC ELECTRICAL CHARACTERISTICS

Symbol Parameter Tests Conditions 1N5820 1N5821 1N5822 Unit

Lead length = 10 mm 80 °C/W
Lead length = 10 mm 25 °C/W

*

I

R

V

F

Reverse leakage
current

*

Forward voltage drop Tj = 25°CI

Tj=25°CV
Tj = 100°C

Tj=25°CI

R=VRRM

=3A

F

= 9.4 A

F

Pulse test : * tp = 380 µs, δ <2%

To evaluate the conduction losses use the following equations :
P=0.33xI
P=0.33xI

F(AV)
F(AV)

+ 0.035 I

+ 0.060 I

F2(RMS )

F2(RMS )

Fig. 1: Average forward power dissipation versus
average forward current (1N5820/1N5821).

PF(av)(W)

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

δ = 0.05

δ = 0.1

IF(av) (A)

for 1N5820 / 1N5821

for 1N5822

δ = 0.2

δ = 0.5

δ

=tp/T

δ = 1

T

Fig. 2: Average forward power dissipation versus
average forward current (1N5822).

PF(av)(W)

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

tp

0.2

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

222mA

20 20 20 mA

0.475 0.5 0.525 V

0.85 0.9 0.95 V

δ = 0.1

δ = 0.2

δ = 0.05

IF(av) (A)

δ

=tp/T

δ = 0.5

δ = 1

T

tp

Fig. 3: Normalized avalanche power derating
versus pulse duration.

P(t)

ARM p

P (1µs)

ARM

1

0.1

0.01

t (µs)

0.001

0.10.01 1

2/5

p

10 100 1000

Fig. 4: Normalized avalanche power derating
versus junction temperature.

P(t)

ARM p

P (25°C)

ARM

1.2
1

0.8

0.6

0.4

0.2
0

0 25 50 75 100 125 150

T (°C)

j

1N582x

Fig. 5-1: Average forward current versus ambient

temperature (δ=0.5) (1N5820/1N5821).

IF(av)(A)

3.5

3.0

Rth(j-a)=Rth(j-l)=25°C/W

2.5

2.0

Rth(j-a)=80°C/W

1.5

1.0

0.5

0.0
0 25 50 75 100 125 150

δ

=tp/T

T

tp

Tamb(°C)

Fig. 6-1: Non repetitive surge peak forward

current versus overload duration (maximum
values) (1N5820/1N5821).

IM(A)

16
14
12
10

8
6
4

IM

2
0

1E-3 1E-2 1E-1 1E+0

δ=0.5

t

t(s)

Ta=25°C

Ta=75°C

Ta=100°C

Fig. 5-2: Average forward current versus ambient
temperature (δ=0.5) (1N5822).

IF(av)(A)

3.5

Rth(j-a)=Rth(j-l)=25°C/W

3.0

2.5

2.0

Rth(j-a)=80°C/W

1.5

1.0

T

0.5

tp

=tp/T

δ

0.0
0 25 50 75 100 125 150

Tamb(°C)

Fig. 6-2: Non repetitive surge peak forward

current versus overload duration (maximum
values) (1N5822).

IM(A)

12
11
10

9
8
7
6
5
4
3

IM

2
1
0

1E-3 1E-2 1E-1 1E+0

δ=0.5

t

t(s)

Ta=25°C

Ta=75°C

Ta=100°C

Fig. 7: Relative variation of thermal impedance
junction to ambient versus pulse duration (epoxy
printed circuit board, e(Cu)=35mm, recommended
pad layout).

Zth(j-a)/Rth(j-a)

1.0

0.8

0.6

δ = 0.5

0.4

δ

=tp/T

T

tp

δ = 0.2

0.2

δ = 0.1

Single pulse

0.0
1E-1 1E+0 1E+1 1E+2 1E+3

tp(s)

Fig. 8: Junction capacitance versus reverse

voltage applied (typical values).

C(pF)

600

1N5820

100

1N5822

VR(V)

10

12 5102040

F=1MHz

Tj=25°C

1N5821

3/5

1N582x

Fig. 9-1: Reverse leakage current versus reverse

voltage applied (typical values) (1N5820/1N5821).

IR(mA)

1E+2

1E+1

1E+0

Tj=125°C

Tj=100°C

1N5820

1N5821

1E-1

1E-2

1E-3

0 5 10 15 20 25 30

Tj=25°C

VR(V)

Fig. 10-1: Forward voltage drop versus forward

current (typical values) (1N5820/1N5821).

IFM(A)

50.00

Fig. 9-2: Reverse leakage current versus reverse
voltage applied (typical values) (1N5822).

IR(mA)

5E+1
1E+1

1E+0

Tj=125°C

Tj=100°C

1E-1

1E-2

1E-3

0 5 10 15 20 25 30 35 40

Tj=25°C

VR(V)

Fig. 10-2: Forward voltage drop versus forward

current (typical values) (1N5822).

IFM(A)

50.00

10.00

Tj=125°C

1.00

Tj=100°C

Tj=25°C

0.10

0.01

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1

VFM(V)

Fig. 11: Non repetitive surge peak forward current

versus number of cycles.

IFSM(A)

100

80

60

40

F=50Hz

Tj initial=25°C

10.00

1.00

Tj=125°C

Tj=100°C

Tj=25°C

0.10

VFM(V)

0.01

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

20

Number of cycles

0

1 10 100 1000

4/5

PACKAGE MECHANICAL DATA

DO-201AD plastic

1N582x

BA

note 1

ØD ØD

DIMENSIONS

REF.

Min. Max. Min. Max.

A 9.50 0.374
B 25.40 1.000

♠ C 5.30 0.209
♠ D 1.30 0.051

E 1.25 0.049

E

note 2

B

note 1

E

ØC

NOTESMillimeters Inches

1 - The lead diameter ♠ D is not controlled over zone E
2 - The minimum axial length within which the device may be

placed with its leads bent at right angles is 0.59"(15 mm)

Ordering type Marking Package Weight Base qty Delivery mode

1N582x Part number

DO-201AD 1.12g 600 Ammopack

cathode ring

1N582xRL Part number

DO-201AD 1.12g 1900 Tape & reel

cathode ring

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EPOXY MEETS UL94,V0

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