Datasheet 1N5819-TB, 1N5819-T3, 1N5819, 1N5817-TB, 1N5817-T3 Datasheet (WTE)

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Page 1

WTE

POWER SEM ICOND UCTOR S

1N5817 – 1N5819

1.0A SCHOTTKY BARRIER RECTIFIER

Features

Schottky Barrier Chip

Guard Ring Die Construction for

Transient Protection

High Current Capability A B A

Low Power Loss, High Efficiency

High Surge Current Capability

For Use in Low Voltage, High Frequency

Inverters, Free Wheeling, and Polarity Protection Applications C

Mechanical Data

Case: Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: Cathode Band

Weight: 0.34 grams (approx.)

Mounting Position: Any

Marking: Type Number

Maximum Ratings and Electrical Characteristics

Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.

Characteristic Symbol 1N5817 1N5818 1N5819 Unit

Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage

RMS Reverse Voltage V Average Rectified Output Current (Note 1) @TL = 90°C I

Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method)

Forward Voltage @IF = 1.0A @I

Peak Reverse Current @TA = 25°C At Rated DC Blocking Voltage @T

Typical Junction Capacitance (Note 2) C

= 3.0A

= 100°C

RRM

RWM

R(RMS)

FSM

DO-41

Dim Min Max

A B C D

All Dimensions in mm

@TA=25°C unless otherwise specified

20 30 40 V

14 21 28 V

0.450

0.750

25.4 —

4.06 5.21

0.71 0.864

2.00 2.72

1.0 A

25 A

0.550

0.875

1.0 10

110 pF

0.60

0.90

Typical Thermal Resistance Junction to Lead (Note 1) R Operating and Storage Temperature Range Tj, T

Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.



STG

60 K/W

-65 to +150 °C

Page 2

1.0

)

0.8

0.6

0.4

0.2

(AV)

I , AVERAGE OUTPUT CURRENT (A)

Single Pulse Half-Wave 60 HzResistive or Inductive Load

10 40 60 80 100 120 140150

T , LEAD TEMPERATURE (ºC)

Fig. 1 Forward Current Derating Curve

RWARD CURRENT (A) F

TANTANE

I, N

1000

1.0

0.1

1N5817

1N5818

1N5819

T = 25ºC

Pulse Width = 300 s

2% Duty Cycle

0.5 1.0 1.5 2.0 2.5

V , INSTANTANEOUS FORWARDVOLTAGE(V

Fig. 2 Ty pical Forward Characteristics

T = 25ºC

f = 1MHz

ITANCE(pF)

100

APA ,

8.3ms Single Half Sine-Wave

FSM

I , PEAK FORWARD SURGECURRENT (A)

Fig. 3 Maximum Non-Repetitive Peak Fwd Surge Current

JEDECMethod

1 10 100

NUMBEROF CYCLES AT 60 Hz

0.1 1.0 10 10 V , REVERSEVOLTAGE(V)

Fig. 4 Typical Junctio n Capacitance

Page 3

ORDERING INFORMA TION

Product No.

!!!!

Package Type Shipping Quantity

1N5817-T3 DO-41 5000/Tape & Reel

1N5817-TB

DO-41 5000/Tape & Box 1N5817 DO-41 1000 Units/Box 1N5818-T3 DO-41 5000/Tape & Reel

1N5818-TB

DO-41 5000/Tape & Box 1N5818 DO-41 1000 Units/Box 1N5819-T3 DO-41 5000/Tape & Reel

1N5819-TB

DO-41 5000/Tape & Box 1N5819 DO-41 1000 Units/Box

Products listed in

T3 suffix refers to a 13” reel. TB suffix refers to Ammo Pack. Shipping quantity given is for minimum packing quantity only. For minimum order quantity, please consult the Sales Department.

bold

are WTE

Preferred

devices.

Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes it to be correct and accurate. However, WTE cannot assume any responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to manufacturer. WTE reserves the right to change any or all information herein without further notice.

WARNING

support devices or systems without the express written approval.

: DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in life

Won-Top Electronics Co., Ltd.

No. 44 Yu Kang North 3rd Road, Chine Chen Dist., Kaohsiung, Taiwan

886-7-822-5408 or 886-7-822-5410

Phone:

886-7-822-5417

Fax:

sales@wontop.com

Email: Internet:

http://www.wontop.com

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