Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
page
M3D119
1N5817; 1N5818; 1N5819
Schottky barrier diodes
Product specification
Supersedes data of April 1992
1996 May 03
Page 2
Philips Semiconductors Product specification
Schottky barrier diodes 1N5817; 1N5818; 1N5819
FEATURES
• Low switching losses
• Fast recovery time
• Guard ring protected
• Hermetically sealed leaded glass
package.
APPLICATIONS
• Low power, switched-mode power
supplies
• Rectifying
• Polarity protection.
DESCRIPTION
The 1N5817 to 1N5819 types are Schottky barrier diodes fabricated in planar
technology, and encapsulated in SOD81 hermetically sealed glass packages
incorporating Implotec
(1) Implotec is a trademark of Philips.
handbook, 4 columns
TM(1)
technology.
ak
MAM218
Fig.1 Simplified outline (SOD81) and symbol.
1996 May 03 2
Page 3
Philips Semiconductors Product specification
Schottky barrier diodes 1N5817; 1N5818; 1N5819
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
R
V
RSM
V
RRM
V
RWM
I
F(AV)
I
FSM
T
stg
T
j
continuous reverse voltage
1N5817
1N5818
1N5819
non-repetitive peak reverse voltage
1N5817
1N5818
1N5819
repetitive peak reverse voltage
1N5817
1N5818
1N5819
crest working reverse voltage
1N5817
1N5818
1N5819
average forward current
=55°C; R
T
amb
note 1; V
R(equiv)
= 100 K/W;
th j-a
= 0.2 V; note 2
non-repetitive peak forward current t = 8.3 ms half sine wave;
JEDEC method;
Tj=T
prior to surge: VR=0
j max
storage temperature
junction temperature
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−65
−
20 V
30 V
40 V
24 V
36 V
48 V
20 V
30 V
40 V
20 V
30 V
40 V
1A
25 A
+175 °C
125 °C
Notes
1. Refer to SOD81 standard mounting conditions.
2. For Schottky barrier diodes thermal run-away has to be considered, as in some applications, the reverse power
losses P
PR and I
are a significant part of the total power losses. Nomograms for determination of the reverse power losses
R
rating will be available on request.
F(AV)
1996 May 03 3
Page 4
Philips Semiconductors Product specification
Schottky barrier diodes 1N5817; 1N5818; 1N5819
ELECTRICAL CHARACTERISTICS
T
=25°C; unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
V
F
V
F
I
R
C
d
forward voltage see Fig.2
1N5817 I
= 0.1 A
F
I
=1A
F
=3A
I
F
forward voltage see Fig.2
1N5818 I
= 0.1 A
F
=1A
I
F
I
=3A
F
forward voltage see Fig.2
1N5819 I
reverse current VR=V
= 0.1 A
F
I
=1A
F
I
=3A
F
RRMmax
V
R=VRRMmax
; note 1
; Tj= 100 °C
diode capacitance VR= 4 V; f = 1 MHz
1N5817
1N5818
1N5819
−−
−−
−−
−−
−−
−−
−−
−−
−−
320
450
750
330
550
875
340
600
900
−−1
−−10
−
−
−
80
50
50
−
−
−
mV
mV
mV
mV
mV
mV
mV
mV
mV
mA
mA
pF
pF
pF
Note
1. Pulsed test: t
= 300 µs; δ = 0.02.
p
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 100 K/W
Note
1. Refer to SOD81 standard mounting conditions.
1996 May 03 4
Page 5
Philips Semiconductors Product specification
Schottky barrier diodes 1N5817; 1N5818; 1N5819
GRAPHICAL DATA
handbook, halfpage
5
I
F
(A)
4
3
2
1
0
01
1
P
F(AV)
(W)
Tj = 125 oC
0.5 VF (V)
Fig.2 Typical forward voltage.
MBE634
25 oC
a = 3
2.5 1.57
2
MBE642
1.42 1
0.5
0
0 0.5 1.5
1
I
F(AV)
(A)
Fig.3 1N817. Maximum values steady state forward power dissipation as a function of the average forward
current; a = I
F(RMS)/IF(AV).
1996 May 03 5
2
Page 6
Philips Semiconductors Product specification
Schottky barrier diodes 1N5817; 1N5818; 1N5819
1
a = 3 2.5 1.57 1.42 12
P
F(AV)
(W)
0.5
0
0 0.5 1.5
1
I
F(AV)
MBE641
(A)
Fig.4 1N5818. Maximum values steady state forward power dissipation as a function of the average forward
current; a = I
F(RMS)/IF(AV).
2
1
a = 3 2.5 1.57 1.42 12
P
F(AV)
(W)
0.5
0
0 0.5 1.5
1
I
F(AV)
MBE643
(A)
Fig.5 1N5819. Maximum values steady state forward power dissipation as a function of the average forward
current; a = I
F(RMS)/IF(AV).
2
1996 May 03 6
Page 7
Philips Semiconductors Product specification
Schottky barrier diodes 1N5817; 1N5818; 1N5819
V
RWM
δ = 0.5
VR (V)
MBG434
V
RWM
δ = 0.2
200
handbook, halfpage
T
j
o
C)
(
150
100
50
0
020
V
R
10
Fig.6 1N5817. Maximum permissible junction
temperature as a function of reverse voltage;
R
= 100 K/W.
th j-a
V
RWM
δ = 0.2
MBG435
0.20
handbook, halfpage
P
R
(W)
0.15
0.10
0.05
0
020
V
RWM
V
δ = 0.5
R
10
VR (V)
Fig.7 1N5817. Reverse power dissipation as a
function of reverse voltage (max. values);
R
= 100 K/W.
th j-a
V
δ = 0.2
VR (V)
MBG432
RWM
200
handbook, halfpage
T
j
o
C)
(
150
100
50
0
0102030
V
R
V
RWM
δ = 0.5
Fig.8 1N5818. Maximum permissible junction
temperature as a function of reverse voltage;
R
= 100 K/W.
th j-a
1996 May 03 7
0.20
handbook, halfpage
P
R
(W)
0.15
0.10
0.05
0
0
V
RWM
V
δ = 0.5
R
V
RWM
δ = 0.2
20 3010
MBG437
VR (V)
Fig.9 1N5818. Reverse power dissipation as a
function of reverse voltage (max. values);
R
= 100 K/W.
th j-a
Page 8
Philips Semiconductors Product specification
Schottky barrier diodes 1N5817; 1N5818; 1N5819
30
MBG433
V
RWM
δ = 0.2
VR (V)
200
handbook, halfpage
T
j
o
C)
(
150
100
50
0
01020 40
V
R
V
RWM
δ = 0.5
Fig.10 1N5819. Maximum permissible junction
temperature as a function of reverse voltage;
R
= 100 K/W.
th j-a
0.20
handbook, halfpage
P
R
(W)
0.15
0.10
0.05
0
040
V
RWM
V
δ = 0.5
R
V
RWM
δ = 0.2
20 3010
MBG436
VR (V)
Fig.11 1N5819. Reverse power dissipation as a
function of reverse voltage (max. values);
R
= 100 K/W.
th j-a
1996 May 03 8
Page 9
Philips Semiconductors Product specification
Schottky barrier diodes 1N5817; 1N5818; 1N5819
PACKAGE OUTLINE
handbook, full pagewidth
Dimensions in mm.
2.15
max
5 max
3.8 max28 min 28 min
0.81
max
MBC051
Fig.12 SOD81.
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 May 03 9
Loading...