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1819-35
35 Watt - 28 Volts, Class C
Microwave 1750 - 1850 MHz
GENERAL DESCRIPTION
The 1819-35 is a COMMON BASE transistor capable of providing 35 Watts
of Class C, RF output power over the band 1750-1850 MHz. This transistor is
designed for Microwave Broadband Class C amplifier applications. It includes
Input and Output prematching and utilizes Gold metalization and diffused
ballasting to provide high reliability and supreme ruggedness. The transistor
uses a fully hermetic High Temperature Solder sealed package.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 135 Watts
Maximum Voltage and Current
BVces Collector to Emitter Voltage 50 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 12 A
Ma xi mum Te mperatures
Storage Temperature - 65 to + 200 C
Operating Junction Temperature + 200 C
ELECTRICAL CHARACTERISTICS @ 25 C
o
o
o
O
CASE OUTLINE
55AW, STYLE 1
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
Pout
Pin
Pg
η
c
VSWR
Power Out
Power Input
Power Gain
Collector Efficiency
1
Load Mismatch Tolerance
F = 1750-1850 MHz
Vcb = 28 Volts
Pin = 7 Watts
As Above
F = 1850MHz, Pin = 7 W
35
7
7.0
40
10:1
Watt
Watt
dB
%
BVces
BVebo
H
FE
Cob
θjc
72034
Issue August 1996
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
Collector to Emitter Breakdown
Emitter to Base Breakdown
Current Gain
Output Capacitance
Thermal Resistance
Ic = 20 mA
Ie = 15 mA
Vce = 5 V, Ic = 1 A
F = 1 MHz, Vcb = 28V
50
3.5
10 100
1.3
Volts
Volts
pF
o
C/W
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
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1819-35
August 1996
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