Datasheet 16TTS08, 16TTS12 Datasheet (International Rectifier)

PHASE CONTROL SCR

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Bulletin I2115

16TTS.. SERIES

Description/Features

The 16TTS.. new series of silicon controlled recti­fiers are specifically designed for medium power
switching and phase control applications. The
glass passivation technology used has reliable
operation up to 125° C junction temperature.

Typical applications are in input rectification (soft
start) and these products are designed to be used
with International Rectifier input diodes, switches
and output rectifiers which are available in identi­cal package outlines.

V

T

I

TSM

VR/ VD= 1200V

<1.4V @ 10A
= 200A

Output Current in Typical Applications

Applications Single-phase Bridge Three-phase Bridge Units

Capacitive input filter
common heatsink of 1°C/W

Major Ratings and Characteristics

Characteristics 16TTS..S Units

I

T(AV)

I

RMS

V
I

TSM

V
dv/dt 500 V/µs
di/dt 150 A/µs
T

Sinusoidal 10 A
waveform

V

/

RRM

DRM

@ 10 A, TJ = 25°C 1.4 V

T

J

= 55°C,

T

A

= 125°C, 13.5 17 A

T

J

16 A

800 and 1200 V

200 A

TO-220AC

- 40 to 125 °C
Also available in SMD-220 package (series 16TTS..S)

1

16TTS.. Series

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V oltage Ratings

Part Number

16TTS08 800 800 5
16TTS12 1200 1200

Absolute Maximum Ratings

V

, maximum V

RRM

, maximum I

DRM

RRM/IDRM

peak reverse voltage peak direct voltage 125°C

VVmA

Parameters 16TTS.. Units Conditions

I

Max. Average On-state Current 10 A 50% duty cycle @ TC = 98° C, sinusoidal wave form

T(AV)

I

Max. RMS On-state Current 16

RMS

I

Max. Peak One Cycle Non-Repetitive 170 10ms Sine pulse, rated V

TSM

Surge Current 200 10ms Sine pulse, no voltage reapplied

I2t Max. I2t for fusing 144 A2s 10ms Sine pulse, rated V

200 10ms Sine pulse, no voltage reapplied
I2√t Max. I2√t for fusing 2000 A2√s t = 0.1 to 10ms, no voltage reapplied
V

Max. On-state Voltage Drop 1.4 V @ 10A, TJ = 25°C

TM

r
V

On-state slope resistance 24.0 mΩ TJ = 125°C

t

Threshold Voltage 1.1 V

T(TO)

IRM/IDMMax.Reverse and Direct 0.5 mA TJ = 25 °C

Leakage Current 5.0 TJ = 125 °C

I

Max. Holding Current 100 mA Anode Supply = 6V, Resistive load, Initial IT=1A

H

I

Max. Latching Current 200 mA Anode Supply = 6V, Resistive load

L

dv/dt Max. rate of rise of off-state Voltage 500 V/µs

applied

RRM

applied

RRM

VR = rated V

RRM

/ V

DRM

di/dt Max. rate of rise of turned-on Current 150 A/µs

2

Triggering

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Parameters 16TTS.. Units Conditions

P

Max. peak Gate Power 8.0 W

GM

P

Max. average Gate Power 2.0

G(AV)

+ IGMMax. paek positive Gate Current 1.5 A

- VGMMax. paek negative Gate Voltage 10 V
I

Max. required DC Gate Current 90 mA Anode supply = 6V, resistive load, TJ = - 65°C

GT

to trigger 60 Anode supply = 6V, resistive load, TJ = 25°C

35 Anode supply = 6V, resistive load, TJ = 125°C

V

Max. required DC Gate Voltage 3.0 V Anode supply = 6V, resistive load, TJ = - 65°C

GT

to trigger 2.0 Anode supply = 6V, resistive load, TJ = 25°C

1.0 Anode supply = 6V, resistive load, TJ = 125°C

V

Max. DC Gate Voltage not to trigger 0.2 TJ = 125°C, V

GD

I

Max. DC Gate Current not to trigger 2.0 mA TJ = 125°C, V

GD

= rated value

DRM

= rated value

DRM

16TTS.. Series

Switching

Parameters 16TTS.. Units Conditions

t

Typical turn-on time 0.9 µs TJ = 25°C

gt

t

Typical reverse recovery time 4 TJ = 125°C

rr

t

Typical turn-off time 110

q

Thermal-Mechanical Specifications

Parameters 16TTS.. Units Conditions

T

Max. Junction Temperature Range - 40 to 125 °C

J

T

Max. Storage Temperature Range - 40 to 125

stg

R

Max. Thermal Resistance Junction 1.3 °C/W DC operation

thJC

to Case

R

Max. Thermal Resistance Junction 62

thJA

to Ambient

R

Typ. Thermal Resistance Case 0.5 Mounting surface, smooth and greased

thCS

to Ambient

wt Approximate Weight 2 (0.07) g (oz.)
T Mounting Torque Min. 6 (5)

Max. 12 (10)

Case Style TO-220AC

Kg-cm
(Ibf-in)

3

16TTS.. Series

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125

120

115

110

105

100

95

90

024681012

Maximum Allowable Case Temperature (°C)

16TTS.. Series
R (DC) = 1.3 K/W

thJC

Conduction Angle

30°

60°

90°

120°

Average On-state Current (A)

Fig. 1 - Current Rating Characteristics

20

180°
120°

90°

15

10

5

60°
30°

RMS Limit

Conduction Angle

16TTS..
T = 125°C

J

180°

125

16TTS.. Series

120

115

110

105

100

95

90

0246810121416

Maximum Allowable Case Temperature (°C)

30°

Average On-state Current (A)

R (DC) = 1.3 K/W

thJ C

Conduction Period

60°

90°

120°

180°

Fig. 2 - Current Rating Characteristics

25

20

15

10

5

DC
180°
120°

90°

60°

30°

RMS Limit

Conduction Period

16TTS..
T = 125°C

J

DC

0

024681012

Maximum Average On-state Power Loss (W)

Average On-state Current (A)

Fig. 3 - On-state Power Loss Characteristics

180

160

140

120

100

Peak Half Sine Wave On-state Current (A)

Number Of Equal Amplitude Half Cycle Current Pulses (N)

Fig. 6 - Maximum Non-Repetitive Surge Current

At Any Rated Load Condition And With

Ra ted V Applied Following Surge.

16TTS..Series

80

1 10 100

RRM

Initial T = 125°C

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

J

0

0 2 4 6 8 10 12 14 16 18

Maximum Average On-state Power Loss (W)

Average On-state Current (A)

Fig. 4 - On-state Power Loss Characteristics

220

200

180

160

140

120

100

Peak Half Sine Wave Forward Current (A)

Fig. 7 - Maximum Non-Repetitive Surge Current

Maximum Non Repetitive Surge Current

Versus Pulse Train Duration.

Initial T = 125°C

No Voltage Reapplied
Rated V Reapplied

80

16TTS.. Series

60

0.01 0. 1 1 10

Pulse T rain Duration (s)

J

RRM

4

1000

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Instantaneous On-state Current (A)

100

Rectangular gate pulse

a)Recommended load line for

rated di/dt: 10 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs

b)Recommended load line for

<= 30% rated di/ dt: 10 V, 65 ohms

10

tr = 1 µs, t p >= 6 µs

100

10

T = 25°C

J

T = 125°C

J

16TTS.. Series

1

012345

Instantaneous On-state Voltage (V)

Fig. 7 - On-state Voltage Drop Characteristics

(1) PGM = 40 , tp = 1 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms

(a)

(b)

16TTS.. Series

TJ = -10 °C

TJ = 25 °C

TJ = 125 °C

1

VGD

Instantaneous Gate Voltage (V)

IGD

0.1

0.001 0.01 0.1 1 10 100

16T TS..

Instantaneous Gate Current (A)

Frequency Limited by PG(AV)

(4) (3) (2) (1)

Fig. 8 - Gate Characteristics

10

Steady State Value
(DC Operation)

thJC

0.1

1

D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08

Single Pulse

Transient Thermal Im pedance Z (K/W)

0.01

0.0001 0.001 0.01 0.1 1

Square Wave Pulse Duration (s)

Fig. 9 - Thermal Impedance Z

5

16TTS.. Series

Characteristics

thJC

16TTS.. Series

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Outline T able

15.24 (0.60)

14.84 (0.58)

14.09 (0.55)

13.47 (0.53)

4.57 (0.18)

4.32 (0.17)

2

1.40 (0.05)

1.15 (0.04)

10.54 (0.41)
MAX.

3

1

2

3

1

2

3.78 (0.15)

3.54 (0.14)

2.92 (0.11)

2.54 (0.10)

TERM 2

3.96 (0.16)

3.55 (0.14)

2.04 (0.080) MAX.

0.94 (0.04)

0.69 (0.03)

0.61 (0.02) MAX.

DIA.

1.32 (0.05)

1.22 (0.05)

6.48 (0.25)

6.23 (0.24)

2°

0.10 (0.004)

2.89 (0.11)

2.84 (0.10)

Ordering Information Table

Device Code

16 T T S 12

1

1- Current Rating, RMS value
2 - Circuit Configuration

T = Single Thyristor

3 - Package

T = TO-220AC

4 - Type of Silicon

S = Converter Grade

5 - Voltage code: Code x 100 = V

5.08 (0.20) REF.

3

524

RRM

08 = 800V
12 = 1200V

Dimensions in millimeters (and inches)

2

(A)

(G) 3

1 (K)

6