Datasheet 16FLR100S05, 16FL100S05 Specification

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DO-4 (DO-203AA)

(Stud Version), 6 A, 12 A, 16 A

PRIMARY CHARACTERISTICS

I

F(AV)

Package DO-4 (DO-203AA)

Circuit configuration Single

VS-6FL(R), VS-12FL(R), VS-16FL(R) Series

Fast Recovery Diodes

FEATURES

• Short reverse recovery time

• Low stored charge

• Wide current range

• Excellent surge capabilities

•Standard JEDEC

• Stud cathode and stud anode versions

• Fully characterized reverse recovery conditions

• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

• DC power supplies

6 A, 12 A, 16 A

•Inverters

• Converters

• Choppers

• Ultrasonic systems

• Freewheeling diodes

Vishay Semiconductors

®

types

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS 6FL 12FL 16FL UNITS

I

F(AV)

I

F(RMS)

I

FSM

2

t

I

2

t 1452 1452 2290 I2s

I

V

RRM

t

rr

T

J

T

C

50 Hz 110 145 180

60 Hz 115 150 190

50 Hz 60 103 160

60 Hz 55 94 150

Range 50 to 1000 50 to 1000 50 to 1000 V

Characteristics table

Range -65 to +150 -65 to +150 -65 to +150 °C

61216A

100 100 100 °C

9.5 19 25 A

See Recovery

See Recovery

Characteristics table

See Recovery

Characteristics table

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V

, MAXIMUM
TYPE
NUMBER

VS-6FL..,
VS-12FL..,
VS-16FL..

Revision: 11-Jan-18

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

VOLTAGE

CODE

550 75

10 100 150

20 200 275

40 400 500

60 600 725

80 800 950

100 1000 1250

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RRM

REPETITIVE PEAK AND

OFF-STATE VOLTAGE

V

V

, MAXIMUM

RSM

NON-REPETITIVE

PEAK VOLTAGE

V

1

I

MAXIMUM

RRM

AT T

= 25 °C

J

μA

50 - 6.0

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MAXIMUM

I

RRM

AT T

= 100 °C

J

mA

I

Document Number: 93138

A

A2s

ns

MAXIMUM

RRM

AT T

J

= 150 °C
mA

VS-6FL(R), VS-12FL(R), VS-16FL(R) Series

www.vishay.com

FORWARD CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS 6FL.. 12FL.. 16FL.. UNITS

Maximum average forward current 
at case temperature

Maximum RMS current I

Maximum peak, one-cycle 
non-repetitive forward current

2

Maximum I

Maximum I

t for fusing I2t

2

t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 856 1452 2290 A2s

Maximum forward voltage drop V

Note

(1)

JEDEC® registered values

I

F(AV)

F(RMS)

I

FSM

FM

180° conduction, half sine wave
DC

t = 10 ms

t = 8.3 ms 135 180 225

t = 10 ms

t = 8.3 ms 115 150

t = 10 ms

t = 8.3 ms 78 130 210

t = 10 ms

t = 8.3 ms 55 94 150

TJ = 25 °C; IF = Rated I

= 100 °C; IFM =  x rated I

T

C

No voltage
reapplied

100 % V
reapplied

RRM

No voltage
reapplied

100 % V
reapplied

RRM



Sinusoidal
half wave,
initial
T

= 150 °C

J



(DC) 1.4 1.4

F(AV)

F(AV)

Vishay Semiconductors

6 12

(1)

100 100 100 °C

9.5 19 25

130 170 215

110 145 180

86 145 230

60 103 160

(1)

1.5 1.5

(1)

(1)

16 A

190

1.4

1.5

A

A2s

V

RECOVERY CHARACTERISTICS

PARAMETER SYMBOL TEST CONDITIONS

TJ = 25 °C,
I

= 1 A to VR = 30 V,

Maximum
reverse
recovery time

t

F

dI

/dt = 100 A/μs

rr

F

= 25 °C, 

T

J

dI

/dt = 25 A/μs,

F

I

=  x rated I

FM

Maximum
peak recovery

I

RM(REC)IFM

=  x rated I

current

TJ = 25 °C, 
I

= 1 A to VR = 30 V,

Maximum
reverse
recovery
charge

Q

F

dI

/dt = 100 A/μs

rr

F

= 25 °C, 

T

J

dI

/dt = 25 A/μs,

F

I

=  x rated I

FM

Note

(1)

JEDEC® registered values

F(AV)

F(AV)

F(AV)

6FL.., 12FL.., 16FL..

S02 S05 S10 S02 S05 S10 S02 S05 S10

UNITS

110 285 490 100 250 430 90 225 390

ns

200 500 1000 200 500 1000 200 500 1000

-- --- - -- - -

230 1700 5000 200 1300 3800 150 1100 3000

nC

200 1200 5000 200 1200 5000 200 1200 5000

I

FM

t

rr

dir

dt

I

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS 6FL.. 12FL.. 16FL.. UNITS

Maximum junction operating temperature range T

Maximum storage temperature range T

Maximum thermal resistance, junction to case R

Maximum thermal resistance, case to heatsink R

J

Stg

thJC

thCS

DC operation 2.5 2.0 1.6

Mounting surface, smooth, flat, and greased 0.5

Not lubricated threads

Allowable mounting torque

Lubricated threads

Approximate weight

Case style JEDEC

®

-65 to +150

-65 to +175

+ 0 - 10 %

1.5
(13)

1.2

+ 0 - 10 %

(lbf · in)

(10)

7g

0.25 oz.

DO-4 (DO-203AA)

RM(REC)

°C

°C/W

N · m

t

Q

rr

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Document Number: 93138

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Average Forward Current (A)

Maximum Allowable

Case Temperature (°C)

160

150

140

130

120

110

100

90

80

70

60

010515202530

DC

180 °C

180 °C
120 °C

60 °C

VS-6FL(R), VS-12FL(R), VS-16FL(R) Series

Vishay Semiconductors

R

CONDUCTION

thJC

CONDUCTION ANGLE

6FL.. 12FL.. 16FL.. 6FL.. 12FL.. 16FL..

SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION

180° 0.58 0.46 0.37 0.33 0.26 0.21

120° 0.60 0.48 0.39 0.58 0.46 0.37

60° 1.28 1.02 0.82 1.28 1.02 0.82

30° 2.20 1.76 1.41 2.20 1.76 1.41

Note

• The table above shows the increment of thermal resistance R

160

150

140

130

120

110

100

90

Maximum Allowable

Case Temperature (°C)

180 °C
120 °C

80

60 °C

70

60

0123 4 567 8 910

DC

180 °C

Average Forward Current (A)

TEST CONDITIONS UNITS

= 150 °C K/W

T

J

when devices operate at different conduction angles than DC

thJC

Fig. 1 - Average Forward Current vs.

Maximum Allowable Case Temperature, 6FL Series

160

150

140

130

120

110

100

90

Maximum Allowable

Case Temperature (°C)

180 °C
120 °C

80

60 °C

70

60

02 4 6 8 10 12 14 16 18 20

DC

180 °C

Average Forward Current (A)

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Fig. 2 - Average Forward Current vs.

Maximum Allowable Case Temperature, 12FL Series

3

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I

IF, IFM - Peak forward current prior to commutation

-dI
I

RM(REC)

- Reverse recovery time

t

rr

Q

rr

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Fig. 3 - Average Forward Current vs.

Maximum Allowable Case Temperature, 16FL Series

I

F

I

FM

t

%I

RM(REC)

I

RM(REC)

/dt - Rate of fall of forward current

F

- Peak reverse recovery current

- Reverse recovered charge

dI

F

dt

t

rr

Q

rr

Fig. 4 - Reverse Recovery Time Test Waveform

Document Number: 93138

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Maximum Average Forward

Power Loss (W)

Average Forward Current (A) Maximum Allowable

Ambient Temperature (°C)

123

6 100

180° 0.58

120° 0.60

60° 1.28

30° 2.20

908070605040302010

45

0

0

7

8

9

10

6

5

4

3

1

2

Conduction angle

Ø

RMS limit

No heatsink

30 - ΔR

20 - ΔR

15 - ΔR

12 - ΔR

R

thSA

= 10 - ΔR K/

W

8 - ΔR

7 - ΔR

6 - ΔR

5 - ΔR

Conduction

angle - Ø

ΔR - K/W

6FL...
T

J

= 150 °C

Ø = 180°

120°

60°
30°

Maximum Average Forward

Power Loss (W)

Average Forward Current (A) Maximum Allowable

Ambient Temperature (°C)

135

10 100

180° 0.33

120° 0.58

60° 1.28

30° 2.20

908070605040302010

79

24

6 8

0

0

14

12

10

8

6

2

4

DC

0

Conduction

angle - Ø

ΔR - K/W

RMS limit

6FL...
T

J

= 150 °C

Ø = 180°

120°

60°
30°

DC

Conduction angle

Ø

No hea

tsink

30 - ΔR

20 - ΔR

15 - ΔR

12 - ΔR

R

thSA

= 8

- ΔR K/W

10 - ΔR

4 - ΔR

3 - ΔR

6 - ΔR

5 - ΔR

Maximum Average Forward

Power Loss (W)

Average Forward Current (A) Maximum Allowable

Ambient Temperature (°C)

135

12 100

180° 0.46

120° 0.48

60° 1.02

30° 1.76

908070605040302010

7 9 10 11

24

6 8

0

0

14

16

18

20

12

10

8

6

2

4

Conduction

angle - Ø

ΔR - K/W

Conduction angle

Ø

RMS limit

12FL...
T

J

= 150 °C

Ø = 180°

120°

60°
30°

No hea

tsink

30 - Δ

R

20 - ΔR

15 - ΔR

12 - ΔR

10 - ΔR

R

thSA

= 4 - ΔR K/W

8 - ΔR

3 - ΔR

2 - ΔR

1 - ΔR

6 - ΔR

5 - ΔR

Fig. 5 - Current Rating Nomogram (Sinusoidal Waveforms), 6FL Series

VS-6FL(R), VS-12FL(R), VS-16FL(R) Series

Vishay Semiconductors

Revision: 11-Jan-18

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Fig. 6 - Current Rating Nomogram (Rectangular Waveforms), 6FL Series

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Fig. 7 - Current Rating Nomogram (Sinusoidal Waveforms), 12FL Series

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Maximum Average Forward

Power Loss (W)

Average Forward Current (A) Maximum Allowable

Ambient Temperature (°C)

2610

20 100

180° 0.26

120° 0.46

60° 1.02

30° 1.76

908070605040302010

14 18

4 8

12 16

0

0

30

25

20

15

10

5

DC

0

Conduction

angle - Ø

ΔR - K/W

RMS limit

12FL...
T

J

= 150 °C

Ø = 180°

120°

60°
30°

DC

Conduction angle

Ø

No heatsink

20 - ΔR

15 -

ΔR

R

thSA

= 2 - ΔR K/W

10 - ΔR

4 - ΔR

3 - ΔR

1.0 - ΔR

0.5 - ΔR

6 - ΔR

8 - ΔR

5 - ΔR

Maximum Average Forward

Power Loss (W)

Average Forward Current (A) Maximum Allowable

Ambient Temperature (°C)

16 100

180° 0.37

120° 0.39

60° 0.82

30° 1.41

908070605040302010

10 12 14

24

6 8

0

0

20

25

15

10

5

Conduction

angle - Ø

ΔR - K/W

Conduction angle

Ø

RMS limit

16FL...
T

J

= 150 °C

Ø = 180°

120°

60°
30°

20 - ΔR

15 - ΔR

10 - ΔR

R

thSA

= 3 - ΔR K/W

8 - ΔR

4 - ΔR

2 - ΔR

1.5 - ΔR

1 - ΔR

6 - ΔR

5 - ΔR

Maximum Average Forward

Power Loss (W)

Average Forward Current (A) Maximum Allowable

Ambient Temperature (°C)

510

25 100

180° 0.21

120° 0.37

60° 0.82

30° 1.41

908070605040302010

15 20

0

0

35

30

25

20

15

10

5

DC

0

Conduction

angle - Ø

ΔR - K/W

RMS limit

16FL...
T

J

= 150 °C

Ø = 180°

120°

60°
30°

DC

Conduction angle

Ø

15 - ΔR

R

thSA

= 3 - ΔR K/

W

10 - ΔR

4 - ΔR

2 - ΔR

1.0 - ΔR

1.5 - ΔR

0.5 - ΔR

6 - ΔR

8 - ΔR

5 - ΔR

Fig. 8 - Current Rating Nomogram (Rectangular Waveforms), 12FL Series

VS-6FL(R), VS-12FL(R), VS-16FL(R) Series

Vishay Semiconductors

Revision: 11-Jan-18

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Fig. 9 - Current Rating Nomogram (Sinusoidal Waveforms), 16FL Series

5

Fig. 10 - Current Rating Nomogram (Rectangular Waveforms), 16FL Series

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VS-6FL(R), VS-12FL(R), VS-16FL(R) Series

Vishay Semiconductors

3

10

6FL...

2

10

10

TJ = 150 °C

TJ = 25 °C

Instantaneous Forward Current (A)

1

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

Instantaneous Forward Voltage (V)

Fig. 11 - Maximum Forward Voltage vs. Forward Current,

6FL Series

3

10

6FL...

Ø = 180°

2

10

Ø

10

Power Loss (W)

120°

60°
30°

Ø

Ø = DC
180°
120°
60°
30°

3

10

12FL...

Ø = 180°

120°

2

10

Ø

10

Power Loss (W)

60°
30°

Maximum Average Forward

1

1

10

10

Ø = DC
180°
120°
60°
30°

TJ = 150 °C

2

Ø

3

10

Average Forward Current (A)

Fig. 14 - Maximum High Level Forward Power Loss vs. Average

Forward Current, 12FL Series

3

10

16FL..

2

10

TJ = 150 °C

10

TJ = 25 °C

Maximum Average Forward

1

1

10

TJ = 150 °C

2

10

10

Average Forward Current (A)

Fig. 12 - Maximum High Level Forward Power Loss vs.

Average Forward Current, 6FL Series

3

10

12FL..

2

10

10

TJ = 150 °C

TJ = 25 °C

Instantaneous Forward Current (A)

1

0 0.5 1.0 1.5 2.0 3.02.5 3.5 4.0

Instantaneous Forward Voltage (V)

Fig. 13 - Maximum Forward Voltage vs. Forward Current,

12FL Series

Instantaneous Forward Current (A)

3

1

0 0.5 1.0 1.5 2.0 3.02.5 3.5 4.0

Instantaneous Forward Voltage (V)

Fig. 15 - Maximum Forward Voltage vs. Forward Current,

16FL Series

3

10

16FL...

2

10

10

Power Loss (W)

Maximum Average Forward

1

1

Ø

Ø = 180°

120°

60°
30°

10

Ø = DC
180°
120°
60°
30°

Ø

TJ = 150 °C

2

10

3

10

Average Forward Current (A)

Fig. 16 - Maximum High Level Forward Power Loss vs.

Average Forward Current, 16FL Series

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10

10

5

10

4

10

3

10

2

1 3 10 30

Rate of Fall of Forward Current (A/µs)

Recovered Charge (nC)

100

IF = π x rated I

F(AV)

6FL...S05
12FL...S05
16FL...S05

TJ = 150 °C

6FL...

12FL...

16FL...

TJ = 25 °C

IF = 1 A

100

200

300

400

600
500

1000

2000

3000

4000

5000

6000

1 3 10 30

Rate of Fall of Forward Current (A/µs)

Reverse Recovery Time (ns)

100

TJ = 150 °C

IF = π x rated I

F(AV)

6FL...S10
12FL...S10
16FL...S10

6FL...

12FL...

16FL...

TJ = 25 °C

IF = 1 A

10

10

5

10

4

10

3

10

2

1 3 10 30

Rate of Fall of Forward Current (A/µs)

Recovered Charge (nC)

100

IF = π x rated I

F(AV)

6FL...S10
12FL...S10
16FL...S10

TJ = 150 °C

6FL...

12FL...

16FL...

TJ = 25 °C

IF = 1 A

VS-6FL(R), VS-12FL(R), VS-16FL(R) Series

Vishay Semiconductors

600
500
400

300

200

TJ = 25 °C

100

60
50
40

30

6FL...S02

20

Reverse Recovery Time (ns)

12FL...S02
16FL...S02

10

1 3 10 30

TJ = 150 °C

6FL...

IF = π x rated I

12FL...

IF = 1 A

Rate of Fall of Forward Current (A/µs)

Fig.17a - Typical Reverse Recovery Time vs.

Rate of Fall of Forward Current, All Series...S02

4

10

6FL...S02
12FL...S02
16FL...S02

3

10

IF = π x rated I

2

10

10

Recovered Charge (nC)

TJ = 25 °C

1

1 3 10 30

F(AV)

6FL...

Rate of Fall of Forward Current (A/µs)

Fig. 17b - Typical Recovered Charge vs.

Rate of Fall of Forward Current, All Series...S02

F(AV)

16FL...

100

Fig. 18b - Typical Recovered Charge vs.

Rate of Fall of Forward Current, All Series...S05

TJ = 150 °C

16FL...

12FL...

IF = 1 A

100

Fig. 19a - Typical Reverse Recovery Time vs.

Rate of Fall of Forward Current, All Series...S10

6FL...S05
12FL...S05
16FL...S05

3000

2000

1000

600
500

TJ = 25 °C

400
300

200

Reverse Recovery Time (ns)

100

Revision: 11-Jan-18

1 3 10 30

Rate of Fall of Forward Current (A/µs)

Fig. 18a - Typical Reverse Recovery Time vs.

Rate of Fall of Forward Current, All Series...S05

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TJ = 150 °C

IF = 1 A

6FL...

IF = π x rated I

12FL...

F(AV)

16FL...

100

Fig. 19b - Typical Recovered Charge vs.

Rate of Fall of Forward Current, All Series...S10

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Peak Half Sine Wave

Forward Current (A)

Number of Equal Amplitude Half

Cycle Current Pulses (N)

10 20 40 6012 468

0

40

60

20

140

120

100

80

50 Hz

60 Hz

At any rated load condition and with

rated V

RRM

applied following surge.

Peak Half Sine Wave

Forward Current (A)

Number of Equal Amplitude Half

Cycle Current Pulses (N)

10 20 40 6012 468

0

50

150

100

50 Hz

60 Hz

At any rated load condition and with

rated V

RRM

applied following surge.

VS-6FL(R), VS-12FL(R), VS-16FL(R) Series

Vishay Semiconductors

200

At any rated load condition and with

rated V

150

applied following surge.

RRM

Fig. 20 - Maximum Non-Repetitive Surge Current vs.

Number of Current Pulses, 6FL Series

100

Forward Current (A)

Peak Half Sine Wave

50

0

50 Hz

60 Hz

10 20 40 6012 468

Number of Equal Amplitude Half

Cycle Current Pulses (N)

Fig. 22 - Maximum Non-Repetitive Surge Current vs.

Number of Current Pulses, 16FL Series

10

6FL...

1

16FL...

12FL...

Junction to Case (°C/W)

Transient Thermal Impedance

-1

10

-3

10

-2

10

-1

10

1

Square Wave Pulse Duration (s)

10

Fig. 21 - Maximum Non-Repetitive Surge Current vs.

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Number of Current Pulses, 12FL Series

8

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Fig. 23 - Maximum Transient Thermal Impedance,

Junction to Case vs. Pulse Duration, All Series

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ORDERING INFORMATION TABLE

VS-6FL(R), VS-12FL(R), VS-16FL(R) Series

Vishay Semiconductors

Device code

16VS- F L R 60 M S02

51 32 4 6 7 8

1

- Vishay Semiconductors product

2 - Current code I

= exact current rating

(AVG)

3 - F = diode

4 - Omit = standard recovery diode

L = only for fast diode

5 - Omit = stud forward polarity

R = stud reverse polarity

6

- Voltage code x 10 = V

- Outlines:

7

(see Voltage Ratings table)

RRM

Omit = stud base UNF thread
M = stud base metric thread

8

-trr code only for fast diode (see Recovery Characteristics table)

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95311

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DIMENSIONS in millimeters (inches)

3.30 (0.13)

4.00 (0.16)

5.50 (0.22) MIN.

10.20 (0.40)
MAX.

11.50 (0.45)

10.70 (0.42)

10/32" UNF-2A

For metric devices: M5 x 0.8

0.8 ± 0.1

(0.03 ± 0.004)

R 0.40

R (0.02)

Ø 6.8 (0.27)

Ø 1.80 ± 0.20

(Ø 0.07 ± 0.01)

3.50 (0.14)

20.30 (0.80) MAX.

11 (0.43)

2

+ 0.3

0

(0.08 )

+ 0.01

0

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Vishay Semiconductors

DO-203AA (DO-4)

Document Number: 95311 For technical questions, contact: [e-mail]
Revision: 30-Jun-08 1

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Legal Disclaimer Notice

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Vishay

Disclaimer



ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED

Revision: 08-Feb-17

1

Document Number: 91000