CREE W6PXD3O-0000, W6NXD3L-0000, W6NXD3K-0000, W6NXD3J-0000, W6NXD0KLSR-0000 Datasheet
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Effective December 1998 • Revised March 2003 • Page 1
Silicon Carbide
Substrates
Product Specifications
4H Silicon Carbide (n/p-type)
6H Silicon Carbide (n/p-type)
Page 2 • Effective December 1998 • Revised March 2003
Properties and Specifications for
Silicon Carbide
Applications: • High Frequency Power Devices
•High Power Devices
•High Temperature Devices
•Optoelectronic Devices
•III-V Nitride Deposition
Physical Properties
Polytype |
Single Crystal 4H |
Single Crystal 6H |
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Crystal Structure |
Hexagonal |
Hexagonal |
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Bandgap |
3.26 eV |
3.03 eV |
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Thermal Conductivity |
3.0-3.8 W/cm • K @ 298K |
3.0-3.8 W/cm • K @ 298K |
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(Typical Range) |
(2.3-2.8 W/cm • K @ 373K) |
(2.3-2.8 W/cm • K @ 373K) |
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Lattice Parameters |
a=3.073 Å |
a=3.081 Å |
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c=10.053Å |
c=15.117Å |
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Mohs Hardness |
~9 |
~9 |
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Effective December 1998 • Revised March 2003 • Page 3
Product Descriptions
Part Number |
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Options |
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W X X X X X X |
- |
X X X X |
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0 |
= No Epitaxy |
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1 |
= 1 Layer |
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2 |
= 2 Layer |
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3 |
= 3 Layer |
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4 |
= 4 Layer |
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5 |
= 5 Layer |
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0 = No Epitaxy |
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S = Standard SiC Epitaxy |
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T = Thick SiC Epitaxy |
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0 = Single Side Polish, Si Face Epi Ready |
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C = Single Side Polish, C Face Epi Ready |
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D = Double Side Polish, Si Face Epi Ready |
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G = Double Side Polish, C Face Epi Ready |
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1 = CMP Polish, Si Face Epi Ready |
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2 = Double Side CMP Polish, Si Face Epi Ready |
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0 = Standard Micropipe |
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S = Select Micropipe |
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L = Low Micropipe |
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U = Ultra-Low Micropipe |
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Resistivity code (see appropriate specification sheet)
0 = On-axis
3 = 3.5° Off-axis
4 = 4.0° Off-axis
8 = 8.0° Off-axis
D = 50.8mm (2.0")
E = 76.2mm (3.0")
P = Production Grade
R = Research Grade
N = N-type
P = P-type
S = Semi-Insulating
T = High Purity Semi-Insulating
4 = 4H
6 = 6H
W= Standard Product
Page 4 • Effective December 1998 • Revised March 2003
Product Descriptions
4H-Silicon Carbide
50.8mm Diameter
STANDARD MICROPIPE DENSITY
Part Number |
Type |
Orientation |
Micropipe Density |
Resistivity Ohm-cm Range |
Bin |
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W4NXD8C-0000 |
n |
8° off |
31-100 micropipes/cm2 |
0.015-0.028 |
C |
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W4NXD8D-0000 |
n |
8° off |
31-100 micropipes/cm2 |
0.028-0.065 |
D |
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W4PXD8G-0000 |
p |
8° off |
N/A |
2.50-8.50 |
G |
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SELECT MICROPIPE DENSITY
W4NXD8C-S000 |
n |
8° off |
16-30 micropipes/cm2 |
0.015-0.028 |
C |
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W4NXD8D-S000 |
n |
8° off |
16-30 micropipes/cm2 |
0.028-0.065 |
D |
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LOW MICROPIPE DENSITY
W4NXD8C-L000 |
n |
8° off |
[15 micropipes/cm2 |
0.015-0.028 |
C |
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ULTRA-LOW MICROPIPE DENSITY
W4NRD8C-U000† |
n |
8° off |
[5 micropipes/cm2 |
0.015-0.028 |
C |
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SEMI-INSULATING
W4SRD0R-0D00 |
SI |
on-axis |
N/A |
á1E5 |
R |
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W4SRD8R-0D00 |
SI |
8° off |
N/A |
á1E5 |
R |
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W4TRD0R-0D00 |
HPSI |
on-axis |
N/A |
á1E5 |
R |
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W4TRD8R-0D00 |
HPSI |
8° off |
N/A |
á1E5 |
R |
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LCW SUBSTRATES
W4NRD0X-0000 |
n |
on-axis |
N/A |
0.013-0.500 |
N/A |
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† - Contact Cree for availability
Effective December 1998 • Revised March 2003 • Page 5
Product Descriptions
4H-Silicon Carbide
76.2mm Diameter
STANDARD MICROPIPE DENSITY
Part Number |
Type |
Orientation |
Micropipe Density |
Resistivity Ohm-cm Range |
Bin |
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W4NXE4C-0D00 |
n |
4° off |
31-100 micropipes/cm2 |
0.015-0.028 |
C |
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W4NXE8C-0D00 |
n |
8° off |
31-100 micropipes/cm2 |
0.015-0.028 |
C |
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W4NRE0X-0D00 |
n |
on-axis |
N/A |
0.013-0.500 |
N/A |
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SELECT MICROPIPE DENSITY
W4NXE4C-SD00 |
n |
4° off |
16-30 micropipes/cm2 |
0.015-0.028 |
C |
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W4NXE8C-SD00 |
n |
8° off |
16-30 micropipes/cm2 |
0.015-0.028 |
C |
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LOW MICROPIPE DENSITY
W4NXE4C-LD00 |
n |
4° off |
[15 micropipes/cm2 |
0.015-0.028 |
C |
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W4NXE8C-LD00 |
n |
8° off |
[15 micropipes/cm2 |
0.015-0.028 |
C |
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SEMI-INSULATING (PROTOTYPE)
W4TXE0X-0D00 |
HPSI |
on-axis |
N/A |
N/A |
N/A |
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Page 6 • Effective December 1998 • Revised March 2003
Product Descriptions
6H-Silicon Carbide
50.8mm Diameter
Part Number |
Type |
Orientation |
Resistivity Ohm-cm Range |
Bin |
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W6NXD3J-0000 |
n |
3.5° off |
0.020-0.040 |
J |
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W6NXD3K-0000 |
n |
3.5° off |
0.040-0.090 |
K |
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W6NXD0K-0000 |
n |
on-axis |
0.040-0.090 |
K |
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W6NXD0KLSR-0000 |
n |
on-axis |
0.040-0.090 |
K |
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W6NXD3L-0000 |
n |
3.5° off |
0.090-0.150 |
L |
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W6PXD3O-0000 |
p |
3.5° off |
1.00-5.00 |
O |
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LCW SUBSTRATES
W6NRD0X-0000 |
n |
on-axis |
0.020-0.200 |
N/A |
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76.2mm Diameter
Part Number |
Type |
Orientation |
Resistivity Ohm-cm Range |
Bin |
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W6NRE0X-0000 |
n |
on-axis |
0.020-0.200 |
N/A |
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