CREE W6PXD3O-0000, W6NXD3L-0000, W6NXD3K-0000, W6NXD3J-0000, W6NXD0KLSR-0000 Datasheet
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Effective December 1998 • Revised March 2003 • Page 1
Silicon Carbide
Substrates
Product Specifications
4H Silicon Carbide
(n/p-type)
6H Silicon Carbide
(n/p-type)
Page 2 • Effective December 1998 • Revised March 2003
Properties and Specifications for
Silicon Carbide
Applications: • High Frequency Power Devices
• High Power Devices
• High Temperature Devices
• Optoelectronic Devices
• III-V Nitride Deposition
Physical Properties
Polytype Single Crystal 4H Single Crystal 6H
Crystal Structure Hexagonal Hexagonal
Bandgap 3.26 eV 3.03 eV
Thermal Conductivity
(Typical Range)
3.0-3.8 W/cm • K @ 298K
(2.3-2.8 W/cm • K @ 373K)
3.0-3.8 W/cm • K @ 298K
(2.3-2.8 W/cm • K @ 373K)
Lattice Parameters
a=3.073 Å
c=10.053Å
a=3.081 Å
c=15.117Å
Mohs Hardness ~9 ~9
Effective December 1998 • Revised March 2003 • Page 3
Product Descriptions
Part Number Options
W X X X X X X - X X X X
0 = No Epitaxy
1 = 1 Layer
2 = 2 Layer
3 = 3 Layer
4 = 4 Layer
5 = 5 Layer
0 = No Epitaxy
S = Standard SiC Epitaxy
T = Thick SiC Epitaxy
0 = Single Side Polish, Si Face Epi Ready
C = Single Side Polish, C Face Epi Ready
D = Double Side Polish, Si Face Epi Ready
G = Double Side Polish, C Face Epi Ready
1 = CMP Polish, Si Face Epi Ready
2 = Double Side CMP Polish, Si Face Epi Ready
0 = Standard Micropipe
S = Select Micropipe
L = Low Micropipe
U = Ultra-Low Micropipe
Resistivity code (see appropriate specification sheet)
0 = On-axis
3 = 3.5° Off-axis
4 = 4.0° Off-axis
8 = 8.0° Off-axis
D = 50.8mm (2.0")
E = 76.2mm (3.0")
P = Production Grade
R = Research Grade
N = N-type
P = P-type
S = Semi-Insulating
T = High Purity Semi-Insulating
4 = 4H
6 = 6H
W= Standard Product
Page 4 • Effective December 1998 • Revised March 2003
Product Descriptions
4H-Silicon Carbide
50.8mm Diameter
STANDARD MICROPIPE DENSITY
Part Number Type Orientation Micropipe Density Resistivity Ohm-cm Range Bin
W4NXD8C-0000 n 8° off 31-100 micropipes/cm
2
0.015-0.028 C
W4NXD8D-0000 n 8° off 31-100 micropipes/cm
2
0.028-0.065 D
W4PXD8G-0000 p 8° off N/A 2.50-8.50 G
SELECT MICROPIPE DENSITY
W4NXD8C-S000 n 8° off 16-30 micropipes/cm
2
0.015-0.028 C
W4NXD8D-S000 n 8° off 16-30 micropipes/cm
2
0.028-0.065 D
LOW MICROPIPE DENSITY
W4NXD8C-L000 n 8° off
[15 micropipes/cm
2
0.015-0.028 C
ULTRA-LOW MICROPIPE DENSITY
W4NRD8C-U000
†
n 8° off
[5 micropipes/cm
2
0.015-0.028 C
SEMI-INSULAT ING
W4SRD0R-0D00 SI on-axis N/A á1E5 R
W4SRD8R-0D00 SI 8° off N/A
á1E5
R
W4TRD0R-0D00 HPSI on-axis N/A
á1E5
R
W4TRD8R-0D00 HPSI 8° off N/A
á1E5
R
LCW SUBSTRATES
W4NRD0X-0000 n on-axis N/A 0.013-0.500 N/A
†
- Contact Cree for availability
Effective December 1998 • Revised March 2003 • Page 5
Product Descriptions
4H-Silicon Carbide
76.2mm Diameter
STANDARD MICROPIPE DENSITY
Part Number Type Orientation Micropipe Density Resistivity Ohm-cm Range Bin
W4NXE4C-0D00 n 4° off 31-100 micropipes/cm
2
0.015-0.028 C
W4NXE8C-0D00 n 8° off 31-100 micropipes/cm
2
0.015-0.028 C
W4NRE0X-0D00 n on-axis N/A 0.013-0.500 N/A
SELECT MICROPIPE DENSITY
W4NXE4C-SD00 n 4° off 16-30 micropipes/cm
2
0.015-0.028 C
W4NXE8C-SD00 n 8° off 16-30 micropipes/cm
2
0.015-0.028 C
LOW MICROPIPE DENSITY
W4NXE4C-LD00 n 4° off
[15 micropipes/cm
2
0.015-0.028 C
W4NXE8C-LD00 n 8° off [15 micropipes/cm
2
0.015-0.028 C
SEMI-INSULAT ING (PROTOTYPE)
W4TXE0X-0D00 HPSI on-axis N/A N/A N/A
Page 6 • Effective December 1998 • Revised March 2003
Product Descriptions
6H-Silicon Carbide
50.8mm Diameter
76.2mm Diameter
Part Number Type Orientation Resistivity Ohm-cm Range Bin
W6NXD3J-0000 n 3.5° off 0.020-0.040 J
W6NXD3K-0000 n 3.5° off 0.040-0.090 K
W6NXD0K-0000 n on-axis 0.040-0.090 K
W6NXD0KLSR-0000 n on-axis 0.040-0.090 K
W6NXD3L-0000 n 3.5° off 0.090-0.150 L
W6PXD3O-0000 p 3.5° off 1.00-5.00 O
LCW SUBSTRATES
W6NRD0X-0000 n on-axis 0.020-0.200 N/A
Part Number Type Orientation Resistivity Ohm-cm Range Bin
W6NRE0X-0000 n on-axis 0.020-0.200 N/A
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