Cirrus Logic CS5509-AS, CS5509-AP Datasheet

CS5509
Single Supply, 16-Bit A/D Converter
Features
l
Delta-Sigma A/D Converter
- 16-bit No Missing Codes
- Linearity Error: ±0.0015%FS
l
Differential Input
- Pin Selectable Unipolar/Bipolar Ranges
- Common Mode Rejection
105 dB @ dc 120 dB @ 50, 60 Hz
l
Either 5 V or 3.3 V Digital Interface
l
On-chip Self-Calibration Circuitry
l
Output Update Rates up to 200/second
l
Ultra Low Power: 1.7 mW
I
Description
The CS5509 is a single supply, 16-bit, serial-output CMOS A/D converter. The CS5509 uses charge-bal­anced (delta-sigma) techniques to provide a low cost, high resolution measurement at output word rates up to 200 samples per second.
The on-chip digital filter offers superior line rejection at 50 Hz and 60 Hz when the device is operated from a
32.768 kHz clock (outpu t word rate = 20 Hz.). The CS5509 has on-chip self-calibration circuitry which
can be initiated at any time or temperature to ensure minimum offset and full-scale errors.
Low power, high resolution and small package size make the CS5509 an ideal solution for loop-powered transmitters, panel meters, weigh scales and battery powered instrument s.
ORDERING INFORMATION
CS5509-AP -40° to +85° C 16-pin Plastic DIP CS5509-AS -40° to +85° C 16-pin SOIC
VREF+ VREF- DGND VD+
910 12
7
AIN+
8
AIN-
Cirrus Logic, Inc. Crystal Semiconductor Products Division
P.O. Box 17847, Austin, Texas 78760 (512) 445 7222 FAX: (512) 445 7581 http://www.crystal.com
Differential
4th-Order
Delta-Sigma
Modulator
Calibration SRAM
VA+
11
Interface
Digital
Filter
Calibration µC
24
CONV XIN
Copyright  Cirrus Logic, I nc. 1997
(All Rights Reserv ed)
13
Serial
Logic
OSC
XOUT
1
CS
14
SCLK
15
SDATA
16
DRDY
3
CAL
6
BP/UP
5
MAR ‘95
DS125F1
1
CS5509
ANALOG CHARACTERISTICS (T
VREF- = 0V; f
= 330kHz; Bipolar Mode; R
CLK
= 25°C; VA+ = 5V ± 10%; VD+ = 3.3V ± 5%; VREF+ = 2.5V,
A
= 50Ω with a 10nF to GND at AIN; AIN- = 2.5V; unless
source
otherwise specified.) (Notes 1, 2)
Parameter* Min Typ Max Units
Accuracy
Linearity Error f f f f
Differential Nonlinearity ­Full Scale Error (Note 3) ­Full Scale Drift ( Note 4) ­Unipolar Offset (Note 3) ­Unipolar Offset Drift (Note 4) ­Bipolar Offset (Note 3) ­Bipolar Offset Drift (Note 4) -
= 32.768 kHz
CLK
= 165 kHz
CLK
= 247.5 kHz
CLK
= 330 kHz
CLK
-
-
-
-
0.0015
0.0015
0.0015
0.005
±
0.25
±
0.25
±
0.5
±
0.5
±
0.5
±
0.25
±
0.25
0.003
0.003
0.003
0.0125
±
0.5
±
2
±
%FS
±
%FS
±
%FS
±
%FS
LSB LSB
-LSB
±
2
LSB
-LSB
±
1
LSB
-LSB
Noise (Referred to Output) - 0.16 - LSB
Analog In put
Analog Input Range: Unipolar
Bipolar (Note 5, 6)
Common Mode Rejection: dc f
= 32.768kHz 50,60 Hz (Note 2)
CLK
-
-
-
120
0 to +2.5
±2.5
105
-
-
-
Volts Volts
-
­Input Capacitance - 15 - pF DC Bias Current (Note 1) - 5 - nA
Power Supplies
DC Power Supply Currents: I
Total
I
Analog
I
Digital
-
-
-
360 300
60
450
-
­Power Dissipation (Note 7) - 1.7 2.25 mW
Power Supply Rejection - 80 - dB
Notes: 1. Both source resistance and shunt capacitance are critical in determining the CS5509’s source
impedance requirements. Refer to the text section
Analog Input Impedance Considerations.
2. Specifications guaranteed by design, characterization and/or test.
3. Applies after calibration at the temper ature of interest.
4. Total drift over the specified temperature range since calibration at power-up at 25°C.
5. The input is differential. Therefore, GND Signal + Common Mode Voltage VA+.
6. The CS5509 can accept input voltages up to the VA+ analog supply. In unipolar mode the CS5509 will output all 1’s if the dc input magnitude ((AIN+)-(AIN-)) exceeds ((VREF+)-(VREF-)) and will output all 0’s if the input becomes more negative than 0 Volts. In bipolar mode the CS5509 will output all 1’s if the dc input magnitude ((AIN+)-(AIN-)) exceeds ((VREF+)-(VREF-)) and will output all
0’s if the input becomes more negative in magnitude than -((VREF+)-(VREF-)).
7. All outputs unloaded. All inputs CMOS levels.
dB dB
µ µ µ
rms
A A A
* Refer to the Specification Definitions immediately following the Pin Description Section.
Specifications are subject to change without notice.
2 DS125F1
DYNAMIC CHARACTERISTICS
Parameter Symbol Ratio Units
Modulator Sampling Frequency f Output Update Rate (CONV = 1) f Filter Corner Frequency f Settling Time to 1/2 LSB (FS S tep) t
s
out
-3dB s
CS5509
f
/2 Hz
clk
f
/1622 Hz
clk
f
/1928 Hz
clk
1/f
out
s
5V DIGITAL CHARACTERISTICS (T
= 25°C; VA+, VD+ = 5V ± 10%; GND = 0.)
A
(Notes 2, 8)
Parameter Symbol Min Typ Max Units
High-Level Input Voltage: XIN
All Pins Except XIN
Low-Level Input Voltage: XIN
All Pins Except XIN High-Level Output Voltage (Note 9) Low-Level Output Voltage I
= 1.6mA
out
Input Leakage Current 3-State Leakage Current Digital Output Pin Capacitance
V
IH
V
IH
V
IL
V
IL
V
OH
V
OL
I
in
I
OZ
C
out
Notes: 8. All measurements are performed under static conditions.
9. I
= -100 µA. This guarantees the ability to drive one TTL load. (VOH = 2.4V @ I
out
3.3V DIGITAL CHARACTERISTICS (T
= 25°C; VA+ = 5V ± 10%; VD+ = 3.3V ± 5%; GND =
A
0.) (Notes 2, 8)
Parameter Symbol Min Typ Max Units
High-Level Input Voltage: XIN
All Pins Except XIN
Low-Level Input Voltage: XIN
All Pins Except XIN High-Level Output Voltage I Low-Level Output Voltage I
= -400µA
out
= 400µA
out
Input Leakage Current 3-State Leakage Current Digital Output Pin Capacitance
V
IH
V
IH
V
IL
V
IL
V
OH
V
OL
I
in
I
OZ
C
out
3.5
2.0
-
-
-
-
-
-
-
-
1.5
0.8
V V
V V
(VD+)-1.0 - - V
--0.4V
-
--
±
1
±
10
±
10
µ
A
µ
A
-9-pF
= -40 µA).
out
0.7VD+
0.6VD+
-
-
-
-
-
-
-
-
0.3VD+
0.16VD+
V V
V V
(VD+)-0.3 - - V
--0.3V
-
--
±1 ±10 µA
±10 µA
-9-pF
DS125F1 3
CS5509
5V SWITCHING CHARACTERISTICS (T
Logic 0 = 0V, Logic 1 = VD+; C
= 50 pF.) (Note 2)
L
= 25°C; VA+, VD+ = 5V ± 10%; Input Levels:
A
Parameter Symbol Min Typ Max Units
Master Clock Frequency Internal Os cillator:
External Clock:
XIN
f
clk
30.0
Master Clock Duty Cycle Rise Times: Any Digital Input (Note 10)
t
rise
Any Digital Output
Fall Times: Any Digital Input (Note 10)
t
fall
Any Digital Output
Start-Up
Power-On Reset Period (Note 11) Oscillator Start-up Time XTAL=32.768 kHz (Note 12) Wake-up Period (Note 13)
t
t
t
wup
res osu
Calibration
CONV Pulse Width (CAL=1) (Note 14) CONV and CAL High to Start of Calibration Start of Calibration to End of Calibration
t
t
t
ccw
scl cal
100 - - ns
Conversion
CONV Pulse Width CONV High to Start of Conversion Set Up Time BP/UP stable prior to DRDY
t
cpw
t t
bus
scn
100 - - ns
82/f
falling Hold Time BP/UP stable after DRDY falls Start of Conversion to End of Conversion (Note 15)
t
t
buh con
Notes: 10. Specified using 10% and 90% points on waveform of interest.
11. An internal power-on-reset is activated whenever power is applied to the device.
12. Oscillator start-up time varies with the crystal parameters. This specifi cation does not apply when using an external clock source.
13. The wake-up period begins once the osc illator starts; or when usi ng an external f power-on reset time elapses.
14. Calibration can also be initi ated by pulsing CAL high whi le CONV=1.
15. Conversion time will be 1622/f
if CONV remains high continuous ly.
clk
30
32.768
-
53.0 330
kHz kHz
40 - 60 %
-
-
-
-
50
20
-
-
1.0
-
1.0
-
µ
ns
µ
ns
s
s
-10-ms
- 500 - ms
- 1800/f
clk
--2/f
- 3246/f
clk
--2/f
clk
--s
-s
+200 ns
clk
-s
+200 ns
clk
0--ns
- 1624/f
clk
-
, after the
clk
s
4 DS125F1
CS5509
3.3V SWITCHING CHARACTERISTICS (T
Input Levels: Logic 0 = 0V, Logic 1 = VD+; C
Parameter Symbol Min Typ Max Units
Master Clock Frequency Internal Os cillator:
External Clock: Master Clock Duty Cycle Rise Times: Any Digital Input (Note 10)
Any Digital Output Fall Times: Any Digital Input (Note 10)
Any Digital Output
Start-Up
Power-On Reset Period (Note 11) Oscillator Start-up Time XTAL=32.768 kHz (Note 12) Wake-up Period (Note 13)
Calibration
CONV Pulse Width (CAL=1) (Note 14) CONV and CAL High to Start of Calibration Start of Calibration to End of Calibration
Conversion
CONV Pulse Width CONV High to Start of Conversion Set Up Time BP/UP stable prior to DRDY
falling Hold Time BP/UP stable after DRDY falls Start of Conversion to End of Conversion (Note 15)
= 50 pF.) (Note 2)
L
= 25°C; VA+ = 5V ± 10%; VD+ = 3.3V ± 5%;
A
XIN
f
clk
30.0 30
32.768
-
53.0 330
40 - 60 %
t
t
t
t
t
wup
t
t
t
t
cpw
t t
t
t
rise
fall
res
osu
ccw
scl cal
scn
bus
buh con
-
-
-
-
50
20
-
1.0
-
-
1.0
-
-10-ms
- 500 - ms
- 1800/f
clk
-s
100 - - ns
--2/f
- 3246/f
clk
+200 ns
clk
-s
100 - - ns
--2/f
82/f
clk
--s
+200 ns
clk
0--ns
- 1624/f
clk
-
kHz kHz
µ
s
ns
µ
s
ns
s
DS125F1 5
XIN
XIN/2
CAL
CONV
STATE
t
ccw
t
scl
t
cal
Calibration StandbyStandby
Figure 1. Calibratio n Timing (No t to Scale)
CS5509
XIN
XIN/2
CONV
DRDY
BP/UP
STATE
t
cpw
t
t
scn
t
con
Conversion StandbyStandby
Figure 2. Conversion Timing (Not to Scale)
bus
t
buh
6 DS125F1
CS5509
5V SWITCHING CHARACTERISTICS (T
= 0V, Logic 1 = VD+; C
Serial Clock Serial Clock Pulse Width High
Access Time: CS Low to data valid (Note 16) Maximum Delay Time: SCLK falling to new SDATA bit
Output Float Delay CS High to output Hi-Z (Note 18)
Notes: 16. If
CS is activated asynchronously to DRDY, CS will not be recognized if it occurs when DRDY is high for 2 clock cycles. The propagation delay time may be as great as 2 f guarantee proper clocking of SDATA when usi ng asynchronous sooner than 2 f
17. SDATA transitions on the falli ng edge of SCLK. Note that a rising SCLK must oc cur to enable the serial port shifting mechanism before falli ng edges can be recognized.
CS is returned high before all data bits are output, the SDATA output will complete the current data
18. If bit and then go to high impedance.
= 50 pF.) (Note 2)
L
Parameter Symbol Min Typ Max Units
Pulse Width Low
(Note 17)
SCLK falling to Hi-Z
+ 200 ns after
clk
CS goes low.
= 25°C; VA+, VD+ = 5V ± 10%; Input Levels: Logic 0
A
f
t
t
t
t t
sclk
ph
t
pl
csd
dd
fd1 fd2
0-2.5MHz
200 200
-
-
-
-
ns ns
- 60 200 ns
- 150 310 ns
-
-
60
160
cycles plus 200 ns. To
clk
150 300
ns ns
CS, SCLK(i) should not be taken high
3.3V SWITCHING CHARACTERISTICS (T
Input Levels : Logic 0 = 0V , Logic 1 = V D+; C
Parameter Symbol Min Typ Max Units
Serial Clock Serial Clock Pulse Width High
Access Time: CS Low to data valid (Note 16) Maximum Delay Time: SCLK falling to new SDATA bit
Output Float Delay CS High to output Hi-Z (Note 18)
SCLK falling to Hi-Z
= 50pF.) (Note 2)
L
Pulse Width Low
(Note 17)
= 25°C; VA+ = 5V ± 10%, VD+ = 3.3V ± 5%;
A
f
t
t
t
t t
sclk
ph
t
pl
csd
dd
fd1 fd2
0 - 1.25 MHz
200 200
-
-
-
-
- 100 200 ns
- 400 600 ns
-
-
70
320
150 500
ns ns
ns ns
DS125F1 7
DRDY
CS5509
CS
SCLK(i)
DRDY
CS
SDATA(o) Hi-Z
SCLK(i)
t
csd
t
csd
MSB-1MSB MSB-2SDATA(o) Hi-Z
t
dd
MSB-1MSB LSB+2 LSB+1 LSB
t
dd
Figure 3. Timing Relationships (Not to Scale)
t
ph
t
pl
t
fd1
t
fd2
8 DS125F1
CS5509
RECOMMENDED OPERATING CONDITIONS (DGND = 0V) (Note 19)
Parameter Symbol Min Typ Max Units
DC Power Supplies: Positive Digital
Positive Analog Analog Reference Voltage (Note 20) (VREF+)-(VREF-) 1.0 2.5 3.6 V Analog Input Voltage: (Note 6)
Unipolar
Bipolar
Notes: 19. All voltages with respect to ground.
20. The CS5509 can be operated with a reference voltage as low as 100 mV; but with a corresponding reduction in noise-free resolution. The common mode voltage of the voltage reference may be any value as long as +VREF and -VREF remain inside the supply values of VA+ and GND.
VD+ VA+
VAIN VAIN
3.15
4.5
5.0
5.0
0
-((VREF+)-(VREF-))--
5.5
5.5
(VREF+)-(VREF-) (VREF+)-(VREF-)VV
V V
ABSOLUTE MAXIMUM RATINGS*
Parameter Symbol Min Typ Max Units
DC Power Supplies: Ground (Note 21)
Positive Digital (Note 22)
Positive Analog Input Current, Any Pin Except Supplies (Notes 23 & 24) Output Current
GND
VD+ VA+
I
in
I
out
Power Dissipation (Total) (Note 25) Analog Input Voltage AIN and VREF pins Digital Input Voltage Ambient Operating Temperature Storage Temperature
V
INA
V
IND
T
A
T
stg
Notes: 21. No pin should go more positive than (VA+)+0.3V.
22. VD+ must always be less than (VA+)+0.3V, and can never exceed +6.0 V.
23. Applies to all pins including continuous overvoltage conditions at the analog i nput (AIN) pin.
24. Transient currents of up to 100mA wi ll not cause SCR l atch-up. Maximum input current for a power supply pin is ± 50 mA.
25. Total power dissipation, including all input currents and output currents.
* WARNING: Operation at or beyond these limits may result in permanent damage to the device.
Normal operation is not guaranteed at these extremes.
-0.3
-0.3
-0.3
--
--
-
(VD+)-0.3
-
-
± ±
- - 500 mW
-0.3 - (VA+)+0.3 V
-0.3 - (VD+)+0.3 V
-40 - 85
-65 - 150
6.0
6.0 10 25
V V
V mA mA
°
C
°
C
DS125F1 9
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