• Quasi-resonant Second Stage with Constant-current Output
- Flyback and Buck
• Fast Startup
• Tight LED Current Regulation: Better than ± 5%
• Primary-side Regulation (PSR)
• >0.9 Power Factor
• IEC-61000-3-2 Compliant
• NEMA SSL6 Compatible
•Soft Start
• Protections:
- Output Open/Short
- Current-sense Resistor Open/Short
- External Overtemperature Using NTC
Overview
The CS1610A/1A/12A/13A is a digital control IC engineered to
deliver a high-efficiency, cost-effective, flicker-free, phasedimmable, solid-state lighting (SSL) solution for the incandescent
lamp-replacement market. The CS1610A/11A is designed to
control a quasi-resonant flyback topology. The CS1612A/13A is
designed to control a buck topology. The CS1610A/12A and
CS1611A/13A are designed for 120VAC and 230VAC line
voltage applications, respectively.
The CS1610A/ 11A/12A /13A integrates a critical conduction
mode (CRM) boost converter that provides power factor
correction and dimmer compatibility with a constant output
current, quasi-resonant second stage. An adaptive dimmer
compatibility algorithm controls the boost stage and dimmer
compatibility operation mode to enable flicker-free operation to
<2 % output current with leading-edge, trailing-edge, center-cut,
and digital dimmers (dimmers with an integrated power supply).
Applications
• Dimmable Retrofit LED Lamps
• Dimmable LED Luminaries
• Offline LED Drivers
• Commercial Lighting
Ordering Information
See page 16.
Cirrus Logic, Inc.
http://www.cirrus.com
JUN’14
DS976F1
Copyright Cirrus Logic, Inc. 2014
(All Rights Reserved)
1. INTRODUCTION
V
Z
POR
+
-
Volt age
Regul ator
14
VDD
11
FBSENSE
+
-
15
FBAUX
+
-
13
GD
2
IAC
DAC
+
-
Peak
Control
Second Stage ZC D
+
-
Output Open
12
GND
OLP
+
-
16
BSTOUT
MUX
OCP
+
-
1
BSTAUX
Boost ZC D
3
CLAMP
V
ST(th)
V
STP(th)
V
OCP(th)
V
FBZC D(th)
V
OVP (th)
V
OLP(th)
V
FBZC D(th)
V
Pk_Max(th)
9
4
SGND
5
SOURCE
+
-
+
-
I
CONNECT
V
CONNECT(th)
V
SOURCE(th )
10
FBGAIN
8
IPK
eOTP
15k
ADC
MUX
15k
I
ref
t
FBZC D
I
CLAMP
t
BSTZCD
I
SOURCE
VDD
VDD
Blank
3
Figure 1. CS1610A/11A/12A/13A Block Diagram
CS1610A/11A
CS1612A/13A
A typical schematic using the CS1610A /11A for flyback
applications is shown on the previous page.
Startup current is provided from a patent-pending, external,
high-voltage source-follower network. In addition to providing
startup current, this unique topology is integral in providing
compatibility with digital dimmers by ensuring VDD power is
always available to the IC. During steady-state operation, an
auxiliary winding on the boost inductor back-biases the
source-follower circuit and provides steady-state operating
current to the IC to improve system efficiency.
The rectified input voltage is sensed as a current into pin IAC
and is used to control the adaptive dimmer compatibility
algorithm and extract the phase of the input voltage for output
dimming control. During steady-state operation, the external
high-voltage, source-follower circuit is source-switched in
critical conduction mode (CRM) to boost the input voltage.
This allows the boost stage to maintain good power factor,
provides dimmer compatibility, reduces bulk capacitor ripple
current, and provides a regulated input voltage to the second
stage.
2DS976F1
The output voltage of the CRM boost is sensed by the current
into the boost output voltage sense pin BSTOUT. The quasiresonant second stage is implemented with peak-current
mode primary-side control, which eliminates the need for
additional components to provide feedback from the
secondary and reduces system cost and complexity.
Voltage across an external user-selected resistor is sensed
through pin FBSENSE to control the peak current through the
second stage inductor. Leading-edge and trailing-edge
blanking on pin FBSENSE prevents false triggering.
Pin FBAUX is used to sense the second stage inductor
demagnetization to ensure quasi-resonant switching of the
output stage.
When an external negative temperature coefficient (NTC)
thermistor is connected to the eOTP pin, the
CS1610A/11A/12A/13A monitors the system temperature,
allowing the controller to reduce the output current of the
system. If the temperature reaches a designated high set
point, the IC is shutdown and stops switching.
2. PIN DESCRIPTION
No Connect
Source Switch
Source Ground
Boost Zero-current Detect
Rectifier Voltage Sense
Boost Peak Current
NC
NCNo Connect
SOURCE
SGND
BSTAUX
eOTPExternal Overtemperature Protection
FBSENSESecond Stage Current Sense
GNDGround
GDGate Driver
VDD
IC Supply Voltage
FBAUX
Second Stage Zero-current Detect
BSTOUT
Boost Output Voltage Sense
IAC
CLAMP
Voltage Clamp Current Source
16-lead SOICN
IPK
FBGAINSecond Stage Gain
7
6
5
4
3
2
1
10
11
12
13
14
15
16
8
9
Figure 2. CS1610A/11A/12A/13A Pin Assignments
CS1610A/11A
CS1612A/13A
Pin Name
BST AUX
IAC
CLAMP
SGND
SOURCE
NC
NC
IPK
FBGAIN
eOTP
FBSENSE
GND
GD
VDD
Pin #I/O
1IN
2IN
3OUT
4PWR
5IN
6IN
7IN
8IN
9IN
10IN
11IN
12PWR
13OUT
14PWR
Description
Boost Zero-current Detect — Boost Inductor demagnetization sensing input for
zero-current detection (ZCD) information. The pin is connected to the PFC boost
inductor auxiliary winding through an external resistor divider.
Rectifier Voltage Sense — A current proportional to the rectified line voltage is fed
into this pin. The current is measured with an A/D converter.
Voltage Clamp Current Source — Connect to a voltage clamp circuit on the output
of the boost stage.
Source Ground — Common reference current return for the SOURCE pin.
Source Switch — Connected to the source of the boost stage external high-voltage
FET.
No Connect — Connect this pin to VDD using a pull-up resistor.
No Connect — Connect this pin to VDD using a pull-up resistor.
Boost Peak Current — Connect a resistor to this pin to set the peak current of the
boost circuit.
Second Stage Gain — Connect a resistor to this pin to set the switching frequency
gain for the second stage.
External Overtemperature Protection — Connect an external NTC thermistor to
this pin, allowing the internal A/D converter to sample the change to NTC resistance.
Second Stage Current Sense — The current flowing in the second stage FET is
sensed across a resistor. The resulting voltage is applied to this pin and digitized for
use by the second stage computational logic to determine the FET's duty cycle.
Ground — Common reference. Current return for both the input signal portion of the
IC and the gate driver.
Gate Driver — Gate drive for the second stage power FET.
IC Supply Voltage —
Connect a storage capacitor to this pin to serve as a reservoir for
operating current for the device, including the gate drive current to the power transistor
.
FBAUX
BSTOUT
DS976F13
Second Stage Zero-current Detect — Second stage inductor sensing input. The
15IN
pin is connected to the second stage inductor’s auxiliary winding through an external
resistor divider.
16IN
Boost Output Voltage Sense — A current proportional to the boost output is fed
into this pin. The current is measured with an A/D converter.
CS1610A/11A
CS1612A/13A
3. CHARACTERISTICS AND SPECIFICATIONS
3.1 E lectrical Characteristics
Typical characteristics conditions:
=25°C, VDD=12V, GND=0V
•T
A
• All voltages are measured with respect to GND.
• Unless otherwise specified, all currents are positive
when flowing into the IC.
ParameterConditionSymbolMinTypMaxUnit
VDD Supply Voltage
Operating Range
Turn-on Threshold Voltage
Turn-off Threshold Voltage (UVLO)
Zener Voltage
(Note 1)
After Turn-on
VDD Increasing
VDD Decreasing
I
=20mA
DD
VDD Supply Current
Startup Supply Current
Operating Supply Current
(Note 2)
VDD<V
C
= 0.25nF, Fsw70 kHz
L
Reference
Reference Current
V
CS1610A/12A
CS1611A/13A
= 200 V
BST
V
= 400 V
BST
Boost
Maximum Switching Frequencyf
Clamp CurrentI
Dimmer Attach Peak Current
CS1610A/12A
CS1611A/13A
108 V
207 V
line
line
DCM Delay in No-dimmer Mode
CS1610A
CS1611A/12A /13A
Boost Zero-Current Detect
BSTZCD ThresholdV
BSTZCD Blankingt
ZCD Sink Current
BSTAUX Upper Voltage
(Note 3)I
I
=1mA
ZCD
Boost Protection
Boost Overvoltage Protection (BOP)
CS1610A/12A
CS1611A/13A
108 V
207 V
line
line
Clamp Turn On
CS1610A/12A
CS1611A/13A
108 V
207 V
line
line
Second Stage Current Sense
Sense Resistor Short ThresholdV
Peak Control ThresholdV
Leading-edge Blankingt
Delay to Output--100ns
Minimum/Maximum characteristics conditions:
= -40°C to +125 ° C, VDD= 11V to 17V, GND = 0 V
•T
J
ST(th)
V
V
ST(th)
V
STP(th)
V
I
DD
Z
ST
11-17V
-9.0-V
-7.7-V
18.5-19.8V
--650A
-4.0-mA
I
ref
-
-
BST(Max)
CLAMP
132
253
--200kHz
--3.7-mA
-
-
-
-
BSTZCD(th)
BSTZCD
ZCD
-200-mV
-3.5-s
-2--mA
-VDD+0.6-V
132
253
132
253
V
BOP(th)
OLP(th)
Pk_Max(th)
LEB
-
-
-
-
-200-mV
-1.4-V
-550-ns
133
133
590
508
0.0
6.4
162
148
147
142
-
-
-
-
-
-
-
-
-
-
A
A
mA
mA
s
s
A
A
A
A
4DS976F1
CS1610A/11A
CS1612A/13A
ParameterConditionSymbolMinTypMaxUnit
Second Stage Zero-current Detect
FBZCD ThresholdV
FBZCD(th)
FBZCD Blanking
CS1610A/12A
t
FBZCB
CS1611A/13A
ZCD Sink Current
FBAUX Upper Voltage
(Note 3)I
I
=1mA
ZCD
ZCD
Second Stage Pulse Width Modulator
Minimum On Time-0.55-s
Maximum On Time
CS1610A/11A/13A
CS1612A
Minimum Switching Frequencyt
Maximum Switching Frequency
(Note 4)t
FB(Min)
FB(Max)
Second Stage Gate Driver
Output Source ResistanceZ
Output Sink ResistanceZ
Rise Time
Fall Time
CL=0.25nF
CL=0.25nF
OUT
OUT
Second Stage Protection
Overcurrent Protection (OCP)V
Overvoltage Protection (OVP)V
Open Loop Protection (OLP)V
OCP(th)
OVP(th)
OLP(th)
External Overtemperature Protection (eOTP), Boost Peak Current, Second Stage Frequency Gain
Pull-up Current Source – MaximumI
Conductance Accuracy
Conductance Offset
(Note 5)--±5
(Note 5)-±250-nS
Current Source Voltage ThresholdV
CONNECT
CONNECT(th)
Internal Overtemperature Protection (iOTP)
Thermal Shutdown Threshold
Thermal Shutdown Hysteresis
Notes:1. The CS1610A/11A /12A/13A has an internal shunt regulator that limits the voltage on the VDD pin. VZ, the shunt regulation
voltage, is defined in the VDD Supply Voltage section on page 4.
2. For test purposes, load capacitance C
3. External circuitry should be designed to ensure that the ZCD current drawn from the internal clamp diode when it is forward biased
does not exceed specification.
4. Switching period (T1
5. The conductance is specified in Siemens (S or 1/). Each LSB of the internal ADC corresponds to 250nS or one parallel 4 M
resistor. Full scale corresponds to 256 parallel 4M resistors or 15.625k.
6. Specifications are guaranteed by design and are characterized and correlated using statistical process methods.
(Note 6)T
(Note 6)T
is connected to pin GD and is equal to 0.25 nF.
L
SD
SD(Hy)
T2) 5 s. Period T1 and T2 are defined in the Control Parameters section on page 12.
-200-mV
-
-
2
2.8
-
-
-2--mA
-VDD+0.6-V
-
-
8.8
12.0
-
-
-625-Hz
-200-kHz
-20.3-
-9.4-
--30ns
--20ns
-1.69-V
-1.25-V
-200-mV
-80-A
-1.25-V
-143-ºC
-12-ºC
s
s
s
s
DS976F15
CS1610A/11A
CS1612A/13A
3.2 Thermal Resistance
SymbolParameterValueUnit
Junction-to-Ambient Thermal Impedance2 Layer PCB
JA
Junction-to-Case Thermal Impedance2 Layer PCB
JC
4 Layer PCB
4 Layer PCB
3.3 Absolute Maximum Ratings
Characteristics conditions:
All voltages are measured with respect to GND.
Pin SymbolParameterValueUnit
14V
1, 2, 5, 8, 9,
10,11,15,16
1, 2, 8, 9, 10,
11, 15, 16
13V
13I
5I
3I
-P
-T
-T
All PinsESD
SOURCE
CLAMP
IC Supply Voltage18.5V
DD
Analog Input Maximum Voltage-0.5 to (V
Analog Input Maximum Current5mA
Gate Drive Output Voltage-0.3 to (VDD+0.3)V
GD
Gate Drive Output Current-1.0 / +0.5A
GD
Current into Pin1.1A
Clamp Output Current5mA
Total Power Dissipation400mW
D
Junction Temperature Operating Range(Note 7)-40 to +125°C
J
Storage Temperature Range-65 to +150°C
Stg
Electrostatic Discharge CapabilityHuman Body Model
Charged Device Model
135
129
50
43
DD
2000
500
°C/W
°C/W
°C/W
°C/W
+0.5)V
V
V
Note:7. Long-term operation at the maximum junction temperature will result in reduced product life. Derate internal power dissipation at
the rate of 50 mW /°C for variation over temperature.
WARNING:
Operation at or beyond these limits may result in permanent damage to the device.
Normal operation is not guaranteed at these extremes.
6DS976F1
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