CDIDI CD645, CD5196, CD5195, CD5194, CD486B Datasheet
...
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071 FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com E-mail: mail@cdi-diodes.com
DESIGN DATA
METALLIZATION:
Top: (Anode) ....................Al
Back: (Cathode)..............Au
AL THICKNESS ............25,000 Å Min
GOLD THICKNESS ........4,000 Å Min
CHIP THICKNESS ..................10 Mils
TOLERANCES: ALL
Dimensions ± 2 mils
• GENERAL PURPOSE SILICON DIODES
• ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE
• COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES
EXCEPT SOLDER REFLOW
CD483B
CD485B
CD486B
CD645
AND
CD5194 thru CD5196
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
NOTE 1
AT 100mA (pulsed) except for CD645
which is at 400mA (pulsed)
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified
V
RM
V
RWM
I
O
I
O
I
FSM
TYPE TA=+150
°Ct
p
= 1/120 S
TA=25
°C
V
(pk)
V
(pk)
mA mA A
CD483B 80 70 200 50 2
CD485B 180 180 200 50 2
CD486B 250 225 200 50 2
CD645 270 225 400 150 5
CD5194 80 70 200 50 2
CD5195 180 180 200 50 2
CD5196 250 225 200 50 2
VF(1) I
R1
at V
RWMIR2
at VRMI
R3
at V
RWM
CAP
TYPE TA+25
°CT
A
+25°CTA+150°C@V
R
=4V
V dc nA dc
µ
A
µ
Adc pF
CD483B 0.8 - 1.0 25 100 5 –
CD485B 0.8 - 1.0 25 100 5 –
CD486B 0.8 - 1.0 25 100 5 –
CD645 0.8 - 1.0 50 50 25 2.0
CD5194 0.8 - 1.0 25 100 5 –
CD5195 0.8 - 1.0 25 100 5 –
CD5196 0.8 - 1.0 25 100 5 –
24 MILS
12 MILS
12 MILS
24 MILS
CD483B, CD485B, CD486B, CD645, CD5194 thru CD5196
.3 .4 .5 .6 .7 .8 .9 1.0 1.1 1.2 1.3
VF - Forward Voltage (V)
FIGURE 2
Typical Forward Current
vs Forward Voltage
I
F
- Forward Current - (mA)
1000
100
10
1
0.1
150ºC
100ºC
25ºC
-65ºC
20 40 60 80 100 120 140
Percent of Reverse Working Voltage (%)
FIGURE 3
Typical Reverse Current
vs Reverse Voltage
I
R
- Reverse Current - (µA)
1000
100
10
1
0.1
.01
.001
150ºC
100ºC
25ºC
-65ºC
NOTE : All temperatures shown on graphs are
junction temperatures
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