Calogic VN0605T Datasheet

VN0605T

SOT-23

D

S

G

N-Channel Enhancement-Mode
MOS T ransistor

VN0605T

FEATURES

Low r

••

Low cost

••

DS(on)

<5Ω

APPLICATIONS

Switching

••

Amplification

••

PIN CONNECTIONS

3

TOP VIEW

1

1

ORDERING INFORMATION
Part Package Temperature Range

VN0605T Surface Mount SOT-23 -55
For sorted chip s in carrier s see 2N7000

CORPORATION

o

C to +150oC

2

3

2

1 DRAIN
2 SOURCE

CD5

ABSOLUTE MAXIMUM RATINGS (T

SYMBOL PARAMETERS/TEST CONDITIONS LIMITS UNITS

V

DS

V

GS

I

D

I

DM

P

D

T

J

T

stg

T

L

THERMAL RESISTANCE RATING S

R

1

Pulse width limite d by maxim um junctio n tem perature.

SYMBOL THERMAL RESISTANCE LIMITS UNITS

thJA

3 GATE

= 25oC unless otherwise noted)

A

Drain-Source Voltage 60
Gate-Source Voltage ±30

T

= 25oC0.18

Continuous Drain Current

Pulsed Drain Current

Power Dissipation

Operating Junction Temperature Range -55 to 150
Storage Temperature Range -55 to 150
Lead Temperature (1/16" from case for 10 sec.) 300

Junction-to-Ambient 350 K/W

1

A

= 100oC 0.11

T

A

T

= 25oC0.36

A

= 100oC0.14

T

A

PRODUCT MARKING

VN0605T V05

0.72

V

A

W

o

C

CORPORATION

VN0605T

SPECIFICATIONS

a

SYMBOL PARAMETER TYP

STATIC

V

(BR)DSS

V

GS(th)

I

GSS

I

DSS

I

D(ON)

Drain-Source Breakdown Voltage 70 60
Gate-Thresho ld Voltage 2.3 0.8 3.0 VDS = VGS, ID = 1mA

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

c

700 500 mA VDS = 10V, VGS = 10V

4.5 7.5

r

DS(ON)

Drain-Source On-Resistance

c

5.5 10 T

g

FS

g

OS

Forward Transconductance
Common Source Output Conductance

c

180 80 mS VDS = 10V, ID = 0.2A

c

500 µSVDS = 50V, ID = 50mA

DYNAMIC

C

iss

C

oss

C

rss

Input Capacitance 16 60
Output Capacitance 11 25
Reverse Transfer Capacitance 2 5

SWITCHING

t

t

ON

OFF

Turn-On Time 7 20

Turn-Off Time 11 20

LIMITS

b

MIN MAX UNIT TEST CONDITIONS

ID = 10µA, VGS = 0V

V

±100

nA

V

= ±20V , VDS = 0V

GS

±500 T

1

µA

V

= 50V, VGS = 0V

DS

500 T

VGS = 4. 5V, ID = 50mA

35V

Ω

pF V

ns

= 10V, ID = 0.5A

GS

= 25V, VGS = 0V, f = 1MHz

DS

= 30V, RL = 150Ω, ID = 0.2A

V

DD

V

= 10V, RG = 25Ω

GEN

(Switching time is essentially independent of
operatin g tem p era ture)

= 125oC

J

= 125oC

J

= 125oC

J

Notes:

a. T

= 25oC unless otherwise noted.

A

b. For design aid only, not subject to production testing.
c. Pulse test; PW = ≤300µS, du ty cycle ≤2%.