®
ADS7804
3
ELECTROSTATIC
DISCHARGE SENSITIVITY
Electrostatic discharge can cause damage ranging from
performance degradation to complete device failure. BurrBrown Corporation recommends that all integrated circuits be
handled and stored using appropriate ESD protection
methods.
SPECIFICATIONS (CONT)
ELECTRICAL
At TA = –40°C to +85°C, fS = 100kHz, and V
DIG
= V
ANA
= +5V, using internal reference, unless otherwise specified.
ADS7804P, U ADS7804PB, UB
PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
ABSOLUTE MAXIMUM RATINGS
Analog Inputs: VIN............................................................................. ±25V
CAP ................................... +V
ANA
+0.3V to AGND2 –0.3V
REF .......................................... Indefinite Short to AGND2
Momentary Short to V
ANA
Ground Voltage Differences: DGND, AGND1, AGND2 ................. ±0.3V
V
ANA
....................................................................................................... 7V
V
DIG
to V
ANA
..................................................................................... +0.3V
V
DIG
....................................................................................................... 7V
Digital Inputs ........................................................... –0.3V to +V
DIG
+0.3V
Maximum Junction Temperature................................................... +165°C
Internal Power Dissipation ............................................................. 825mW
Lead Temperature (soldering, 10s) ............................................... +300°C
PACKAGE INFORMATION
PACKAGE DRAWING
PRODUCT PACKAGE NUMBER
(1)
ADS7804P Plastic DIP 246
ADS7804PB Plastic DIP 246
ADS7804U SOIC 217
ADS7804UB SOIC 217
NOTE: (1) For detailed drawing and dimension table, please see end of data
sheet, or Appendix C of Burr-Brown IC Data Book.
MINIMUM
SIGNAL-TO-
MAXIMUM (NOISE + SPECIFICATION
LINEARITY DISTORTION) TEMPERATURE
PRODUCT ERROR (LSB) RATIO (dB) RANGE PACKAGE
ADS7804P ±0.9 70 –40°C to +85°C Plastic DIP
ADS7804PB ±0.45 72 –40°C to +85°C Plastic DIP
ADS7804U ±0.9 70 –40°C to +85°C SOIC
ADS7804UB ±0.45 72 –40°C to +85°C SOIC
ORDERING INFORMATION
POWER SUPPLIES
Specified Performance
V
DIG
Must be ≤ V
ANA
+4.75 +5 +5.25 * * * V
V
ANA
+4.75 +5 +5.25 * * * V
+I
DIG
0.3 * mA
+I
ANA
16 * mA
Power Dissipation f
S
= 100kHz 100 * mW
TEMPERATURE RANGE
Specified Performance –40 +85 * * °C
Derated Performance –55 +125 * * °C
Storage –65 +150 • • °C
Thermal Resistance (
θ
JA
)
Plastic DIP 75 * °C/W
SOIC 75 * °C/W
NOTES: (1) LSB means Least Significant Bit. For the 12-bit, ±10V input ADS7804, one LSB is 4.88mV. (2) Typical rms noise at worst case transitions and
temperatures. (3) As measured with fixed resistors shown in Figure 4. Adjustable to zero with external potentiometer. (4) Full scale error is the worst case of –Full
Scale or +Full Scale untrimmed deviation from ideal first and last code transitions, divided by the transition voltage (not divided by the full-scale range) and includes
the effect of offset error. (5) All specifications in dB are referred to a full-scale ±10V input. (6) Full-Power Bandwidth defined as Full-Scale input frequency at which
Signal-to-(Noise + Distortion) degrades to 60dB, or 10 bits of accuracy. (7) Recovers to specified performance after 2 x FS input overvoltage.