BURR-BROWN OPA551, OPA552 User Manual

Page 1
OPA551
O
P
A
5
5
O
P
A
5
5
1
1
SBOS100A – JULY 1999 – REVISED OCTOBER 2003
High-Voltage, High-Current
OPERATIONAL AMPLIFIERS
OPA551 OPA552

FEATURES

● WIDE SUPPLY RANGE: ±4V to ±30V
● HIGH OUTPUT CURRENT: 200mA Continuous
● LOW NOISE: 14nV/√Hz
● FULLY PROTECTED:
Thermal Shutdown Output Current-Limited
● THERMAL SHUTDOWN INDICATOR
● WIDE OUTPUT SWING: 2V From Rail
● FAST SLEW RATE:
OPA551: 15V/µs OPA552: 24V/µs
● WIDE BANDWIDTH:
OPA551: 3MHz OPA552: 12MHz
● PACKAGES: DIP-8, SO-8, or DDPAK-7

APPLICATIONS

● TELEPHONY
● TEST EQUIPMENT
● AUDIO AMPLIFIERS
● TRANSDUCER EXCITATION
● SERVO DRIVERS

DESCRIPTION

The OPA551 and OPA552 are low cost op amps with high­voltage (60V) and high-current (200mA) capability.
The OPA551 is unity-gain stable and features high slew rate (15Vµs) and wide bandwidth (3MHz). The OPA552 is optimized for gains of 5 or greater, and offers higher speed with a slew rate of 24V/µs and a bandwidth of 12MHz. Both are suitable for telephony, audio, servo, and test applications.
These laser-trimmed, monolithic integrated circuits provide excellent low-level accuracy along with high output swing. High performance is maintained as the amplifier swings to its specified limits.
The OPA551 and OPA552 are internally protected against over-temperature conditions and current overloads. The thermal shutdown indicator “flag” provides a current output to alert the user when thermal shutdown has occurred.
The OPA551 and OPA552 are available in DIP-8 and SO-8 packages, as well as a DDPAK-7 surface-mount plastic power package. They are specified for operation over the extended industrial temperature range, –40°C to +125°C.
OPA551, OPA552
OPA551, OPA552
NC
1
–In
2
+In
3
V–
4
DIP-8 (P)
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
Flag
8
V+
7
Out
6
NC
5
V– –In +In
V–
OPA551, OPA552
1 2 3 4
SO-8 (U)
www.ti.com
Flag
8
V+
7
Out
6
V–
5
NOTE: Tab is connected to V– supply.
Copyright © 1999-2003, Texas Instruments Incorporated
1234
+In
–In
DDPAK-7 Surface-Mount (F)
NC
V–
6
7
5
V+
Flag
Out
Page 2
SPECIFICATIONS: VS = ±30V
OPA551
At T
J
Boldface limits apply over the specified junction temperature range, T
PARAMETER CONDITION MIN TYP MAX UNITS OFFSET VOLTAGE
Input Offset Voltage V
T vs Temperature dVOS/dT ±7 µV/°C
vs Power Supply PSRR V
INPUT BIAS CURRENT
Input Bias Current I Input Offset Current I
NOISE
Input Voltage Noise Density, f = 1kHz e Current Noise Density, f = 1kHz i
INPUT VOLTAGE RANGE
Common-Mode Voltage Range V Common-Mode Rejection Ratio CMRR –27.5V
INPUT IMPEDANCE
Differential 10 Common-Mode 10
OPEN-LOOP GAIN
Open-Loop Voltage Gain A
T
FREQUENCY RESPONSE
Gain-Bandwidth Product GBW 3 MHz Slew Rate SR G = 1 ±15 V/µs Settling Time: 0.1% G = 1, C
Total Harmonic Distortion + Noise, f = 1kHz THD+N Overload Recovery Time V
OUTPUT
Voltage Output V
T
TJ = –40°C to +125°CI
Maximum Continuous Current Output: dc I Short-Circuit Current I Capacitive Load Drive C
SHUTDOWN FLAG
Thermal Shutdown Status Output
Normal Operation Sourcing 0.05 1 µA Thermally Shutdown Sourcing 80 120 160 µA Voltage Compliance Range V– (V+) – 1.5 V
Junction Temperature
Shutdown 160 °C Reset from Shutdown 140 °C
POWER SUPPLY
Specified Voltage V Operating Voltage Range ±4 ±30 V Quiescent Current I
T
TEMPERATURE RANGE
Specified Range T Operating Range T Storage Range T Thermal Resistance
SO-8 Surface Mount DIP-8 DDPak-7 DDPak-7
NOTES: (1) All tests are high-speed tested at +25°C ambient temperature. Effective junction temperature is +25°C unless otherwise noted.
(1)
= +25°C
, RL = 3kΩ connected to ground and V
= 0V, unless otherwise noted.
OUT
= –40°C to +125°C.
J
OPA551UA, PA, FA
= –40°C to +125°C ±5 mV
J
= –40°C to +125°CR
J
OS
B
OS
n n
CM
OL
0.01% G = 1, C
VCM = 0V, IO = 0 ±1 ±3mV
= ±4V to ±30V, VCM = 0V 10 30 µV/V
S
±20 ±100 pA
±3 ±100 pA
14 nV/√Hz
3.5 fA/√Hz
(V–) + 2.5 (V+) – 2.5 V
< VCM < +27.5V 92 102 dB
13
|| 2 Ω || pF
13
|| 6 Ω || pF
RL = 3kΩ, –28V < VO < +28V 110 126 dB
= 3kΩ, –28V < VO < +28V 100 dB
L
R
= 300Ω, –27V < VO < +27V 120 dB
L
= 100pF, 10V Step 1.3 µs
L
= 100pF, 10V Step 2 µs
VO = 15Vr ms, RL = 3kΩ, G = 3 0.0005 %
L
VO = 15Vrms, RL = 300Ω, G = 3 0.0005 %
• Gain = V
IN
= –40°C to +125°CI
J
= –40°C to +125°C ±10 mA
J
OUT
Package Dependent—See Text ±200 mA
O
SC
LOAD
S
Q
J J
A
θ
JA
θ
JA
θ
JA
θ
JC
IO = 200mA (V–) + 3.0 (V+) – 3.0 V
= 200mA (V–) + 3.5 (V+) – 3.5 V
O
I
= 10mA (V–) + 2.0 (V+) – 2.0 V
O
= 10mA (V–) + 2.5 (V+) – 2.7 V
O
Stable Operation See Typical Curve
IO = 0 ±7 ±8.5 mA
S
–40 +125 °C –55 +125 °C –65 +150 °C
1 µs
±380 mA
±30 V
90 °C/W
100 °C/W
65 °C/W
3 °C/W
2
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OPA551, OPA552
SBOS100A
Page 3
SPECIFICATIONS: VS = ±30V
OPA552
At T
J
Boldface limits apply over the specified junciton temperature range, T
PARAMETER CONDITION MIN TYP MAX UNITS OFFSET VOLTAGE
Input Offset Voltage V
T vs Temperature dV
vs Power Supply PSRR V
INPUT BIAS CURRENT
Input Bias Current I Input Offset Current I
NOISE
Input Voltage Noise Density, f = 1kHz e Current Noise Density, f = 1kHz i
INPUT VOLTAGE RANGE
Common-Mode Voltage Range V Common-Mode Rejection Ratio CMRR –27.5V
INPUT IMPEDANCE
Differential 1013 || 2 Ω || pF Common-Mode 10
OPEN-LOOP GAIN
Open-Loop Voltage Gain A
T
FREQUENCY RESPONSE
Gain-Bandwidth Product GBW 12 MHz Slew Rate SR G = 5 ±24 V/µs Settling Time: 0.1% G = 5, C
Total Harmonic Distortion + Noise, f = 1kHz THD+N
Overload Recovery Time V
OUTPUT
Voltage Output V
T
T
Maximum Continuous Current Output: dc I Short-Circuit Current I Capacitive Load Drive C
SHUTDOWN FLAG
Thermal Shutdown Status Output
Normal Operation Sourcing 0.05 1 µA Thermally Shutdown Sourcing 80 120 160 µA Voltage Compliance Range V– (V+) – 1.5 V
Junction Temperature
Shutdown 160 °C Reset from Shutdown 140 °C
POWER SUPPLY
Specified Voltage V Operating Voltage Range ±4 ±30 V Quiescent Current I
T
TEMPERATURE RANGE
Specified Range T Operating Range T Storage Range T Thermal Resistance
SO-8 Surface Mount DIP-8 DDPak-7 DDPak-7
NOTES: (1) All tests are high-speed tested at +25°C ambient temperature. Effective junction temperature is +25°C unless otherwise noted.
(1)
= +25°C
, RL = 3kΩ connected to Ground and V
= 0V, unless otherwise noted.
OUT
= –40°C to +125°C.
J
OPA552UA, PA, FA
= –40°C to +125°C ±5 mV
J
= –40°C to +125°CR
J
OS
/dT ±7 µV/°C
OS
B
OS
n n
CM
OL
0.01% G = 5, C
= –40°C to +125°CI
J
= –40°C to +125°CI
J
= –40°C to +125°C ±10 mA
J
OUT
LOAD
θ θ θ
θ
O
SC
S
Q
J J
A
JA JA JA
JC
VCM = 0V, IO = 0 ±1 ±3mV
= ±4V to ±30V, VCM = 0V 10 30 µV/V
S
±20 ±100 pA
±3 ±100 pA
14 nV/√Hz
3.5 fA/√Hz
(V–) + 2.5 (V+) – 2.5 V
< VCM < +27.5V 92 102 dB
13
|| 6 Ω || pF
RL = 3kΩ, –28V < VO < +28V 110 126 dB
= 3kΩ, –28V < VO < +28V 100 dB
L
RL = 300Ω, –27V < VO < +27V 120 dB
= 100pF, 10V Step 2.2 µs
L
= 100pF, 10V Step 3 µs
VO = 15Vr ms, RL = 3kΩ, G = 5 0.0005 %
V
L
= 15Vrms, RL = 300Ω, G = 5 0.0005 %
O
• Gain = V
IN
S
1 µs
IO = 200mA (V–) + 3.0 (V+) – 3.0 V
= 200mA (V–) + 3.5 (V+) – 3.5 V
O
IO = 10mA (V–) + 2.0 (V+) – 2.0 V
= 10mA (V–) + 2.5 (V+) – 2.7 V
Package Dependent—See Text ±200 mA
O
±380 mA
Stable Operation See Typical Curve
±30 V
IO = 0 ±7 ±8.5 mA
–40 +125 °C –55 +125 °C –65 +150 °C
90 °C/W
100 °C/W
65 °C/W
3 °C/W
OPA551, OPA552
SBOS100A
www.ti.com
3
Page 4
ABSOLUTE MAXIMUM RATINGS
Output Current ................................................................. See SOA Curve
Supply Voltage, V+ to V– ................................................................... 60V
Input Voltage Range ....................................... (V–) – 0.5V to (V+) + 0.5V
Operating Temperature ..................................................–55°C to +125°C
Storage Temperature ..................................................... –65°C to +150°C
Junction Temperature .................................................................... +150°C
Lead Temperature (soldering 10s, DIP-8) ...................................... 300°C
(soldering 3s, SO-8 and DDPAK) .................... 240°C
ESD Capability (Human Body Model) ............................................. 3000V
NOTE: (1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability.
(1)
ELECTROSTATIC DISCHARGE SENSITIVITY
This integrated circuit can be damaged by ESD. Burr-Brown recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degrada­tion to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

PACKAGE/ORDERING INFORMATION

For the most current package and ordering information, see the Package Ordering Addendum at the end of this data sheet.
4
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OPA551, OPA552
SBOS100A
Page 5

TYPICAL PERFORMANCE CURVES

120
100
80
60
40
20
0
1 10 100 1k 10k 100k 1M 10M
Frequency (Hz)
PSRR (dB)
POWER SUPPLY REJECTION RATIO vs FREQUENCY
–PSRR
+PSRR
0.1
0.01
0.001
0.0001
TOTAL HARMONIC DISTORTION + NOISE
vs FREQUENCY
Frequency (Hz)
1 100 1k 10k 100k
THD+N (%)
VO = 15Vrms R
L
= 3kΩ, 300Ω G = 3 (OPA551) G = 5 (OPA552)
At T
= +25°C, VS = ±30V and RL = 3kΩ, unless otherwise noted.
J
All temperatures are junction temperatures unless otherwise noted. Refer to the Applications Information section to calculate junction temperatures from ambient temperatures for a specific configuration.
OPEN-LOOP GAIN AND PHASE vs FREQUENCY
140 120 100
80 60 40
Gain (dB)
20
0
–20 –40
1 10 100 1k 10k 100k 1M 10M
COMMON-MODE REJECTION RATIO vs FREQUENCY
120
100
80
60
CMRR (dB)
40
Gain
OPA551
Phase
Frequency (Hz)
OPA551
0
–20 –40 –60 –80 –100 –120 –140 –160 –180
OPEN-LOOP GAIN AND PHASE vs FREQUENCY
140 120 100
80 60 40
Gain (dB)
Phase (°)
20
0
–20 –40
1 10 100 1k 10k 100k 1M 10M
OPA552
Gain
Frequency (Hz)
OPA552
Phase
0
–20 –40 –60 –80 –100 –120 –140 –160 –180
Phase (°)
20
0
1 10 100 1k 10k 100k 1M 10M
INPUT VOLTAGE AND CURRENT NOISE
10k
1k
100
10
Current Noise (fA/√Hz)
Voltage Noise (nV/√Hz)
1
10 100 1k 10k 100k 1M
SPECTRAL DENSITY vs FREQUENCY
Frequency (Hz)
Frequency (Hz)
i
n
e
n
OPA551, OPA552
SBOS100A
www.ti.com
5
Page 6
TYPICAL PERFORMANCE CURVES (Cont.)
At T
= +25°C, VS = ±30V and RL = 3kΩ, unless otherwise noted.
J
All temperatures are junction temperatures unless otherwise noted. Refer to the Applications Information section to calculate junction temperatures from ambient temperatures for a specific configuration.
MAXIMUM OUTPUT VOLTAGE SWING
vs FREQUENCY
±30
±25
±20
OPA552
±15
±10
Maximum Output Voltage (V)
±5
Without Slew-Induced
OPA551
Distortion
0
1 10 100 1k 10k 100k 1M 10M
Frequency (Hz)
OPEN-LOOP GAIN, POWER SUPPLY REJECTION RATIO,
AND COMMON-MODE REJECTION RATIO
vs TEMPERATURE
130 125 120
A
OL
115 110 105
Gain (dB)
100
PSRR
CMRR
95 90 85 80
–75 –25 25 75 125
Ambient Temperature (°C)
(V+)
(V+)–1
OUTPUT VOLTAGE SWING vs OUTPUT CURRENT
+85°C
(V+)–2
(V+)–3 (V–)+3
–55°C
–55°C
(V–)+2
Output Voltage Swing (V)
(V–)+1
(V–)
0 50 100 150 200 250 300 350 400
INPUT BIAS CURRENT AND INPUT OFFSET CURRENT
100k
10k
1k
100
Current (pA)
10
1
–75 0–25–50 25 50 75 100 125
+25°C
+25°C
+85°C
Output Current (mA)
vs TEMPERATURE
+I
B
Ambient Temperature (°C)
–I
B
–I
OS
QUIESCENT CURRENT AND SHORT-CIRCUIT CURRENT
vs TEMPERATURE
9 8 7 6 5
(mA)
Q
4
I
3 2 1 0
I
Q
–I
SC
+I
SC
450 430 410 390 370 350 330 310 290 270
(mA)
SC
I
Gain Bandwidth Product (MHz)
–75 –50 –25 0 25 50 75 100 125 150
Temperature (°C)
6
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GAIN BANDWIDTH PRODUCT vs TEMPERATURE
100
OPA552
10
OPA551
1
–80 –60 –40 –20 0 20 40 60 80 100 120 140
Temperature (°C)
OPA551, OPA552
SBOS100A
Page 7
TYPICAL PERFORMANCE CURVES (Cont.)
30
25
20
15
10
5
0
–5
–30 –20 –10 0 10 20 30
Common-Mode Voltage (V)
Current (pA)
INPUT BIAS CURRENT AND INPUT OFFSET CURRENT
vs COMMON-MODE VOLTAGE
+I
B
–I
B
I
OS
OFFSET VOLTAGE
PRODUCTION DISTRIBUTION
Percent of Amplifiers (%)
Offset Voltage (mV)
< –3.0
< –2.4
< –1.8
< –1.2
< –0.6
< 0.0
< 0.6
< 1.2
< 1.8
< 2.4
< 3.0
18
15
12
9
6
3
0
Typical production distribution of packaged units.
At T
= +25°C, VS = ±30V and RL = 3kΩ, unless otherwise noted.
J
All temperatures are junction temperatures unless otherwise noted. Refer to the Applications Information section to calculate junction temperatures from ambient temperatures for a specific configuration.
35
30
25
20
15
Slew Rate (V/µs)
10
5
0
–60 –40 –20 0 20 40 60 80 100 120 140
QUIESCENT CURRENT AND SHORT-CIRCUIT CURRENT
7.6
7.2
6.8
SLEW RATE vs TEMPERATURE
OPA552
OPA551
Junction Temperature (°C)
vs SUPPLY VOLTAGE
–I
SC
I
Q
405
395
385
6.4
Quiescent Current (mA)
6.0 0 5 10 15 20 25 30 35
Supply Voltage (V)
OFFSET VOLTAGE DRIFT
18 16 14 12 10
8 6 4
Percent of Amplifiers (%)
2 0
< 0.0
OPA551, OPA552
SBOS100A
PRODUCTION DISTRIBUTION
< 1.5
< 3.0
< 4.50
Offset Drift µV/°C
< 6.0
< 7.5
+I
SC
Typical production distribution of packaged units.
< 9.0
< 10.5
< 12.0
< 13.5
375
365
< 15.0
www.ti.com
Short-Circuit Current (mA)
SETTLING TIME vs CLOSED-LOOP GAIN
100
10
Settling Time (µs)
1
1 10 100
OPA551
0.01%
OPA551
0.1%
OPA552
0.01%
OPA552
0.1%
Gain (V/V)
7
Page 8
TYPICAL PERFORMANCE CURVES (Cont.)
At T
= +25°C, VS = ±30V and RL = 3Ω, unless otherwise noted.
J
All temperatures are junction temperatures unless otherwise noted. Refer to the Applications Information section to calculate junction temperatures from ambient temperatures for a specific configuration.
SMALL-SIGNAL OVERSHOOT vs LOAD CAPACITANCE
60
OPA552
50
40
30
Overshoot (%)
20
10
0
0.01 10.1 10
G = –4
OPA552
G = –6
OPA552, G = –8
Load Capacitance (nF)
LARGE-SIGNAL STEP RESPONSE
OPA552, G = 5, C
L
OPA551, G = 1
OPA551
G = –1
OPA551
G = –2
= 100pF
OPA552
5V/div
LARGE-SIGNAL STEP RESPONSE
OPA551, G = 1, C
Time (1µs/div)
SMALL-SIGNAL STEP RESPONSE
OPA551, G = 1, C
= 100pF
L
= 100pF
L
OPA551
OPA551
5V/div
100mV/div
Time (1µs/div)
SMALL-SIGNAL STEP RESPONSE
OPA552, G = 5, C
Time (1µs/div)
= 100pF
L
OPA552
25mV/div
5V/div
Time (1µs/div)
SMALL-SIGNAL STEP RESPONSE
OPA551, G = –1, C
Time (1µs/div)
= 1000pF
L
OPA551
8
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OPA551, OPA552
SBOS100A
Page 9

APPLICATIONS INFORMATION

Figure 1 shows the OPA551 connected as a basic non­inverting amplifier. The OPA551 can be used in virtually any op amp configuration. OPA552 is designed for use in configurations with gains of 5 or greater. Power supply terminals should be bypassed with 0.1µF capacitors, or greater, near the power supply pins. Be sure that the capaci­tors are appropriately rated for the power supply voltage used. The OPA551 and OPA552 can supply output currents up to 200mA with excellent performance.
V+
10µF
+
0.1µF
R
1
OPA551
V
IN
0.1µF
10µF
R
G = 1+
R
R
2
Flag
(optional)
+
2 1
V
O
Z
L

CURRENT LIMIT

The OPA551 and OPA552 are designed with internal cur­rent-limiting circuitry that limits the output current to ap­proximately 380mA. The current limit varies with increasing junction temperature as shown in the typical curve “Current Limit vs Temperature.” This, in combination with the ther­mal protection circuitry, provides protection from many types of overload conditions including short circuit to ground.

THERMAL PROTECTION

The OPA551 and OPA552 have thermal shutdown circuitry that protects the amplifier from damage caused by overload conditions. The thermal protection circuitry disables the output when the junction temperature reaches approximately 160°C, allowing the device to cool. When the junction temperature cools to approximately 140°C, the output cir- cuitry is automatically re-enabled.
The thermal shutdown function is not intended to replace proper heat sinking. Activation of the thermal shutdown circuitry is an indication of excessive power dissipation or an inadequate heat sink. Continuously running the amplifier into thermal shutdown can degrade reliability.
The Thermal Shutdown Indicator (“flag”) pin can be moni­tored to determine if shutdown is occurring. During normal operation, the current output from the flag pin is typically 50nA. During shutdown, the current output from the flag pin increases to 120µA (typical). This current output allows for easy interfacing to external logic. See Figure 2 for two examples implementing this function.
V–
FIGURE 1. Basic Circuit Connections.
OPA551
HCT logic has relatively well­controlled logic level. A properly chosen resistor value can guarantee proper logic high level throughout the full range of flag output current.
Interfacing with HCT Logic
FIGURE 2. Thermal Shutdown Indicator.
Flag 80µA to
160µA
27kΩ
Logic
Ground
V
OUT
+5V
HCT
Interface to virtually any CMOS logic gate by choosing resistor value that provides a guaranteed logic high voltage with the minimum (80µA) flag current. A diode clamp to the logic supply voltage assures that the CMOS is not damaged by overdrive.
Interfacing with CMOS Logic
OPA551
V
OUT
HP5082-2835
47kΩ
Logic
Ground
V
LOGIC
CMOS
OPA551, OPA552
SBOS100A
www.ti.com
9
Page 10

POWER SUPPLIES

The OPA551 and OPA552 may be operated from power supplies of ±4V to ±30V, or a total of 60V with excellent performance. Most behavior remains unchanged throughout the full operating voltage range. Parameters that vary sig­nificantly with operating voltage are shown in the Typical Performance Curves.
For applications that do not require symmetrical output voltage swing, power supply voltages do not need to be equal. The OPA551 and OPA552 can operate with as little as 8V between the supplies or with up to 60V between the supplies. For example, the positive supply could be set to 50V with the negative supply at –10V or vice-versa.
The SO-8 package outline shows three negative supply (V–) pins. These pins are internally connected for improved thermal performance. Pin 4 is to be used as the primary current
carrier for the negative supply. It is recommended that pins 1 and 5 not be directly connected to V– but, instead be connected to a thermal mass. DO NOT lay out the PC board to use pins 1 and 5 as feedthroughs to the negative supply. Doing so can result in a reduction of performance.
The tab of the DDPAK-7 package is electrically connected to the negative supply (V–), however, this connection should not be used to carry current. For best thermal performance, the tab should be soldered directly to the circuit board copper area (see heat sink text).

POWER DISSIPATION

Internal power dissipation of these op amps can be quite large. Many of the specifications for the OPA551 and OPA552 are for a specified junction temperature. If the device is not subjected to internal self-heating, the junction temperature will be the same as the ambient. However, in practical applications, the device will self-heat and the junc­tion temperature will be significantly higher than ambient. After junction temperature has been established, perfor­mance parameters that vary with junction temperature can be determined from the performance curves. The following calculation can be performed to establish junction tempera­ture as a function of ambient temperature and the conditions of the application.
Consider the OPA551 in a circuit configuration where the load is 600Ω and the output voltage is 15V. The supplies are at ±30V and the ambient temperature (TA) is 40°C. The
θ
for the 8-pin DIP package is 100°C/W. First, the internal heating of the op amp is as follows: P
D(internal)
= IQ • VS = 7.2mA • 60V = 432mW
The output current (IO) can be calculated:
IO = V
= 15V / 600Ω = 25mA
OUT/RL
The power being dissipated (PD) in the output transistor of the amplifier can be calculated:
P
D(output stage)
P
D(total)
= IO • (VS – VO) = 25mA • (30 – 15) = 375mW
= P
D(internal)
+ P
D(output stage)
= 432mW + 375mW = 807mW
The resulting junction temperature can be calculated:
TJ = TA + PD
θ
JA
TJ = 40°C + 807mW • 100°C/W = 120.7°C
Where,
TJ = junction temperature (°C) TA = ambient temperature (°C)
θ
= junction-to-air thermal resistance (°C/W)
JA
For the DDPAK package, the
θ
is 65°C/W with no heat
JA
sinking, resulting in a junction temperature of 92.5°C. To estimate the margin of safety in a complete design
(including heat sink), increase the ambient temperature until the thermal protection is activated. Use worst-case load and signal conditions. For good reliability, the thermal protec­tion should trigger more than +35°C above the maximum expected ambient condition of your application. This en­sures a maximum junction temperature of +125°C at the maximum expected ambient condition.
If the OPA551 or OPA552 is to be used in an application requiring more than 0.5W continuous power dissipation, it is recommended that the DDPAK package option be used. The DDPAK has superior thermal dissipation characteris­tics and is more easily adapted to a heat sink.
Operation from a single power supply (or unbalanced power supplies) can produce even larger power dissipation since a larger voltage can be impressed across the conducting output transistor. Consult Application Bulletin AB-039 for further information on how to calculate or measure power dissipation.
Power dissipation can be minimized by using the lowest possible supply voltage. For example, with a 200mA load, the output will swing to within 3.5V of the power supply rails. Power supplies set to no more than 3.5V above the maximum output voltage swing required by the application will minimize the power dissipation.

SAFE OPERATING AREA

The Safe Operating Area (SOA curves, Figures 3, 4, and 5)
JA
shows the permissible range of voltage and current. The curves shown represent devices soldered to a circuit board with no heat sink. The safe output current decreases as the voltage across the output transistor (VS – VO) increases. For further insight on SOA, consult Application Bulletin AB-039.
Output short circuits are a very demanding case for SOA. A short circuit to ground forces the full power supply voltage (V+ or V–) across the conducting transistor and produces a typical output current of 380mA. With ±30V
10
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OPA551, OPA552
SBOS100A
Page 11
power supplies, this creates an internal dissipation of 11.4W.
THERMAL RESISTANCE vs
CIRCUIT BOARD COPPER AREA
50
40
30
20
10
0
012345
Copper Area (inches
2
)
OPA551, OPA552
Surface-Mount Package
1oz. copper
Circuit Board Copper Area
OPA551, OPA552
Surface-Mount Package
Thermal Resistance,
JA
(°C/W)
θ
This far exceeds the maximum rating and is not recom­mended. If operation in this region is unavoidable, use the DDPAK with a heat sink.
1000
100
10
(mA)
O
I
1
0.1 1 10 100
SAFE OPERATING AREA—8-PIN DIP
125°C
85°C
| – | VO | (V)
| V
S
25°C
FIGURE 3. DIP-8 Safe Operating Area.
1000
100
SAFE OPERATING AREA—SO-8
25°C

HEAT SINKING

Power dissipated in the OPA551 or OPA552 will cause the junction temperature to rise. For reliable operation, the junction temperature should be limited to +125°C. Many applications will require a heat sink to assure that the maximum operating junction temperature is not exceeded. The heat sink required depends on the power dissipated and on ambient conditions.
For heat sinking purposes, the tab of the DDPAK is typically soldered directly to a circuit board copper area. Increasing the copper area improves heat dissipation. Figure 6 shows typical thermal resistance from junction-to-ambient as a function of copper area.
Depending on conditions, additional heat sinking may be required. Aavid Thermal Products Inc. manufactures sur­face-mountable heat sinks designed specifically for use with DDPAK packages. Further information is available on Aavid’s web site, www.aavid.com.
To estimate the margin of safety in a complete design (including heat sink), increase the ambient temperature until the thermal protection is activated. Use worst-case load and signal conditions. For good reliability, the thermal protec­tion should trigger more than +25°C above the maximum expected ambient condition of your application. This pro­duces a junction temperature of +125°C at the maximum expected ambient condition.
125°C
10
(mA)
O
I
1
0.1
FIGURE 4. SO-8 Safe Operating Area.
1 10 100
| V
| – | VO | (V)
S
1000
100
10
(mA)
O
I
1
SAFE OPERATING AREA—DDPAK
125°C
125°C
1" Copper
85°C
25°C
85°C
25°C
1" Copper
0.1 1 10 100
| – | VO | (V)
| V
S
FIGURE 5. DDPAK-7 Safe Operating Area.
OPA551, OPA552
SBOS100A
FIGURE 6. DDPAK Thermal Resistance vs Circuit Board
www.ti.com
Copper Area.
11
Page 12

CAPACITIVE LOADS

The dynamic characteristics of the OPA551 and OPA552 have been optimized for commonly encountered gains, loads, and operating conditions. The combination of low closed­loop gain and capacitive load will decrease the phase margin and may lead to gain peaking or oscillations. Figure 7 shows a circuit that preserves phase margin with capacitive load. Figure 8 shows the small-signal step response for the circuit in Figure 7. Consult Application Bulletin AB-028 for more information.
+30V
OPA551
R
G
V
4kΩ
I
C
1.8nF
S
–30V
R
F
4kΩ
C
F
220pF
10nF
FIGURE 7. Driving Large Capacitive Loads.
can be used to boost output current. The circuit in Figure 10 is capable of supplying output currents up to 1A. Alterna­tively, the OPA547, OPA548, and OPA549 series power op amps should be considered for high output current drive, along with programmable current limit and output disable capability.
R
1
V
IN
NOTE: (1) RS resistors minimize the circulating current that can flow between the two devices due to V
errors.
OS
R
OPA551
OPA551
“SLAVE”
2
“MASTER”
R
10Ω
R
10Ω
(1)
S
(1)
S
R
L
SMALL-SIGNAL STEP RESPONSE
OPA551, G = –1, C
20mV/div
Time (2.5µs/div)
= 10nF
L
OPA551
FIGURE 8. Small-Signal Step Response for Figure 7.

INCREASING OUTPUT CURRENT

In those applications where the 200mA of output current is not sufficient to drive the desired load, output current can be increased by connecting two or more OPA551s or OPA552s in parallel as shown in Figure 9. Amplifier A1 is the “master” amplifier and may be configured in virtually an op amp circuit. Amplifier A2, the “slave”, is configured as a unity gain buffer. Alternatively, external output transistors
FIGURE 9. Parallel Amplifers Increase Output Current Ca-
pability.
R
1
V
IN
NOTE: (1) R drive the load when the output is between 0.7V and –0.7V.
R
2
+30V
TIP29C
C
F
(1)
R
3
100Ω
OPA551
–30V
provides current limit and allows the amplifier to
3
R
0.2Ω
R
0.2Ω
TIP30C
4
4
LOAD
V
O
FIGURE 10. External Output Transistors Boost Output Cur-
rent Up to 1 Amp.
12
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OPA551, OPA552
SBOS100A
Page 13

INPUT PROTECTION

R
F
1kΩ
C
S
1.88nF
NG
1
= 1 + R
F
/RG = 2
NG
2
= 1 + C
S
/CF = 10
OPA552
+30V
–30V
V
IN
V
OUT
C
F
208pF
R
G
1kΩ
The OPA551 and OPA552 feature internal clamp diodes to protect the inputs when voltages beyond the supply rails are encountered. However, input current should be limited to 5mA. In some cases, an external series resistor may be required. Many input signals are inherently current-limtied, therefore, a limiting resistor may not be required. Please consider that a “large” series resistor, in conjunction with the input capacitance, can affect stability.

USING THE OPA552 IN LOW GAINS

The OPA552 family is intended for applications with signal gains of 5 or greater, but it is possible to take advantage of their high slew rate in lower gains using an external compensation technique in an inverting configu­ration. This technique maintains low noise characteristics of the OPA552 architecture at low frequencies. Depending on the application, a small increase in high frequency noise may result. This technique shapes the loop gain for good stability while giving an easily controlled second­order low-pass frequency response.
Considering only the noise gain (non-inverting signal gain) for the circuit of Figure 11, the low frequency noise gain (NG
) will be set by the resistor ratios, while the high
1
frequency noise gain (NG2) will be set by the capacitor ratios. The capacitor values set both the transition fre­quencies and the high frequency noise gain. If this noise gain, determined by NG2 = 1 + CS/CF, is set to a value greater than the recommended minimum stable gain for the op amp and the noise gain pole, set by 1/RFCF, is placed correctly, a very well controlled, 2nd-order low­pass frequency response will result.
To choose the values for both CS and CF, two parameters and only three equations need to be solved. First, the target for the high frequency noise gain (NG2) should be greater than the minimum stable gain for the OPA552. In the circuit in Figure 11, a target NG2 of 10 is used. Second, the signal gain of –1 shown in Figure 11 sets the low frequency noise gain to NG1 = 1 + RF/RG (=2 in this example). Using these two gains, knowing the Gain Band­width Product (GBP) for the OPA552 (12MHz), and targeting a maximally flat 2nd-order, low-pass Butterworth frequency response (Q = 0.707), the key frequency in the compensation can be found.
For the values shown in Figure 11, the f
–3dB
will be approximately 956kHz. This is less than that predicted by simply dividing the GBP by NG1. The compensation network controls the bandwidth to a lower value while
providing the full slew rate at the output and an excep­tional distortion performance due to increased loop gain at frequencies below NG
• Z0. The capacitor values shown
1
in Figure 11 are calculated for NG1 = 2 and NG2 = 10 with no adjustment for parasitics.
Actual circuit values can be optimized by check the small-signal step response with actual load conditions. Figure 12 shows the small-signal step response of this OPA552, G = –1 circuit with a 500pF load. It is well­behaved with no tendency to oscillate. If C
and CF were
S
removed, the circuit would be unstable.
FIGURE 11. Compensation of the OPA552 for G = 1.
SMALL-SIGNAL STEP RESPONSE
OPA552, G = –1, C
20mV/div
Time (1µs/div)
= 500pF
L
OPA552
FIGURE 12. Small-Signal Step Response for Figure 11.
OPA551, OPA552
SBOS100A
www.ti.com
13
Page 14

OFFSET VOLTAGE ERROR CALCULATION

The offset voltage (VOS) of the OPA51 and OPA552 is specified with a ±30V power supply and the common­mode voltage centered between the supplies (VS/2 = 0V). Additional specifications for power supply rejec­tion and common-mode rejection are provided to allow the user to easily calculate worst-case excepted offset under the conditions of a given application.
Power Supply Rejection Ratio (PSRR) is specified in µV/V. For the OPA551 and OPA552, worst-case PSRR is 30µV/V, which means for each volt of change in total power supply voltage, the offset may shift by up to 30µV/V. Common-Mode Rejection Ratio (CMRR) is specified in dB, which can be converted to µV/V using the following equation:
CMRR in (V/V) = 10
[(CMRR in dB)/–20]
(1)
For the OPA551 and OPA552, the worst-case CMRR at ±30mV supply over the full common-mode range is 96dB, or approxmately 15.8µV/V. This means that for every volt of change in common-mode, the offset may shift up to 15.8µV. These numbers can be used to
calculate excursions from the specified offset voltage under different applications conditions. For example, a common application might configure the amplifier with a –48 single supply with –6V common-mode. This configuration represents a 12V variation in power sup­ply: ±30V or 60V in the offset specification versus 48V in the application. In addition, this configuration has an 18V variation in common-mode voltage: VS/2 = –24V is the specification for these power supplies, but the com­mon-mode voltage is –6V in the application.
Calculation of the worst-case expected offset would be as follows:
Worst-case VOS =(2)
maximum specified V
OS
+ (power supply variation • PSRR + (common-mode variation • CMRR)
V
= 5mV + (12V • 30µV/V) + (18V • 15.8µV/V)
OSwc
= ±5.64mV
14
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OPA551, OPA552
SBOS100A
Page 15
PACKAGE OPTION ADDENDUM
www.ti.com
28-Nov-2005
PACKAGING INFORMATION
Orderable Device Status
(1)
Package
Type
Package Drawing
Pins Package
Qty
Eco Plan
OPA551FA OBSOLETE DDPAK KTW 7 TBD Call TI Call TI
OPA551FA/500 ACTIVE DDPAK KTW 7 500 Green (RoHS &
no Sb/Br)
OPA551FA/500G3 ACTIVE DDPAK KTW 7 500 Green (RoHS &
no Sb/Br)
OPA551FAKTWT ACTIVE DDPAK KTW 7 50 Green (RoHS &
no Sb/Br)
OPA551FAKTWTG3 ACTIVE DDPAK KTW 7 50 Green (RoHS &
no Sb/Br) OPA551PA ACTIVE PDIP P 8 50 TBD Call TI Level-NA-NA-NA OPA551UA ACTIVE SOIC D 8 100 Pb-Free
OPA551UA/2K5 ACTIVE SOIC D 8 2500 Pb-Free
OPA551UA/2K5G4 ACTIVE SOIC D 8 2500 Pb-Free
OPA552FA NRND DDPAK KTW 7 49 TBD Call TI Call TI
OPA552FA/500 ACTIVE DDPAK KTW 7 500 Green (RoHS &
no Sb/Br)
OPA552FA/500G3 ACTIVE DDPAK KTW 7 500 Green (RoHS &
no Sb/Br)
OPA552FAKTWT ACTIVE DDPAK KTW 7 50 Green (RoHS &
no Sb/Br)
OPA552FAKTWTG3 ACTIVE DDPAK KTW 7 50 Green (RoHS &
no Sb/Br) OPA552PA ACTIVE PDIP P 8 50 TBD Call TI Level-NA-NA-NA OPA552UA ACTIVE SOIC D 8 100 Pb-Free
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device.
(RoHS)
(RoHS)
(RoHS)
(RoHS)
(2)
Lead/Ball Finish MSL Peak Temp
CU SN Level-2-260C-1 YEAR
CU SN Level-2-260C-1 YEAR
CU SN Level-2-260C-1 YEAR
CU SN Level-2-260C-1 YEAR
CU NIPDAU Level-3-260C-168 HR
CU NIPDAU Level-3-260C-168 HR
CU NIPDAU Level-3-260C-168 HR
CU SN Level-2-260C-1 YEAR
CU SN Level-2-260C-1 YEAR
CU SN Level-2-260C-1 YEAR
CU SN Level-2-260C-1 YEAR
CU NIPDAU Level-3-260C-168 HR
(3)
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS) or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
Addendum-Page 1
Page 16
PACKAGE OPTION ADDENDUM
www.ti.com
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
28-Nov-2005
Addendum-Page 2
Page 17
MECHANICAL DATA
MPDI001A – JANUARY 1995 – REVISED JUNE 1999
P (R-PDIP-T8) PLASTIC DUAL-IN-LINE
0.400 (10,60)
0.355 (9,02)
8
5
0.260 (6,60)
0.240 (6,10)
1
0.021 (0,53)
0.015 (0,38)
NOTES: A. All linear dimensions are in inches (millimeters).
B. This drawing is subject to change without notice.
C. Falls within JEDEC MS-001
4
0.070 (1,78) MAX
0.020 (0,51) MIN
0.200 (5,08) MAX
0.125 (3,18) MIN
0.100 (2,54)
0.010 (0,25)
Seating Plane
M
0.325 (8,26)
0.300 (7,62)
0.015 (0,38)
Gage Plane
0.010 (0,25) NOM
0.430 (10,92) MAX
4040082/D 05/98
For the latest package information, go to http://www.ti.com/sc/docs/package/pkg_info.htm
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
Page 18
MECHANICAL DATA
MPSF015 – AUGUST 2001
KTW (R-PSFM-G7) PLASTIC FLANGE-MOUNT
0.0625 (1,587)
0.0585 (1,485)
H
0.605 (15,37)
0.595 (15,11)
H
0.370 (9,40)
0.330 (8,38)
C
C
0.410 (10,41)
0.385 (9,78)
0.303 (7,70)
0.297 (7,54)
0.050 (1,27)
0.034 (0,86)
F
0.022 (0,57)
0.010 (0,25)
–A–
0.055 (1,40)
0.045 (1,14)
A
0.012 (0,305)
0.000 (0,00)
0.019 (0,48)
0.017 (0,43)
0.026 (0,66)
C
0.014 (0,36)
B
A
M
M
C
M
0.006
–B–
0.104 (2,64)
0.096 (2,44)
0.064 (1,63)
0.056 (1,42)
0.187 (4,75)
0.179 (4,55)
H
0°~3°
0.304 (7,72)
0.296 (7,52)
0.300 (7,62)
0.252 (6,40)
0.183 (4,65)
0.170 (4,32)
NOTES: A. All linear dimensions are in inches (millimeters).
B. This drawing is subject to change without notice.
C. Lead width and height dimensions apply to the
plated lead.
D. Leads are not allowed above the Datum B.
E. Stand–off height is measured from lead tip
with reference to Datum B.
F. Lead width dimension does not include dambar
protrusion. Allowable dambar protrusion shall not cause the lead width to exceed the maximum dimension by more than 0.003”.
G. Cross–hatch indicates exposed metal surface. H. Falls within JEDEC MO–169 with the exception
of the dimensions indicated.
4201284/A 08/01
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
Page 19
Page 20
IMPORTANT NOTICE
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TI warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with TI’s standard warranty. Testing and other quality control techniques are used to the extent TI deems necessary to support this warranty . Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed.
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