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ASMT-Mx00
MoonstoneTM 1 W Power LED Light Source
Data Sheet
Description
The MoonstoneTM 1W Power LED Light Source is a high
performance energy ecient device which can handle
high thermal and high driving current. The exposed pad
design has excellent heat transfer from the package to
the motherboard.
The Cool White Power LED is available in various color
temperature ranging from 4000K to 10000K and Warm
White Power LED ranging from 2600K to 4000K.
The low prole package design is suitable for a wide
variety of applications especially where height is a
constraint.
The package is compatible with reow soldering
process. This will give more freedom and exibility to
the light source designer.
Applications
• Portable (ash light, bicycle head light)
• Reading light
• Architectural lighting
• Garden lighting
• Decorative lighting
Features
• Available in Red, Amber, Green, Blue, Cool White and
Warm White color
• Energy ecient
• Exposed pad for excellent heat transfer
• Suitable for reow soldering process
• High current operation
• Long operation life
• Wide viewing angle
• Silicone encapsulation
• ESD Class HBM Class 3B (threshold > 8 kV)
• MSL 2A for InGaN products
• MSL 4 for AlInGaP products
Specications
• AlInGaP technology for Red and Amber
• 2.4 V (typ) at 350 mA for AlInGaP
• InGaN technology for Green, Blue, Cool White and
Warm White
• 3.6 V (typ) at 350 mA for InGaN
• 120 viewing angle
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Package Dimensions
Metal Slug
Cathode
Anode1
2
3
10.00
8.50
3
1
2
8.50
Ø 5.26
Ø 8.00
5.08
0.81
2.00
5.25
1.30
10.60
1.27
3.30
Heat Sink
LED
ZENER
+
−
Device Selection Guide at Junction Temperature Tj = 25°C
Luminous Flux, f
Color Part Number
Red ASMT-MR00-AGH00 25.5 35.0 43.0 350 AlInGaP
Red ASMT-MR00-AHJ00 33.0 40.0 56.0 350 AlInGaP
Amber ASMT-MA00-AGH00 25.5 35.0 43.0 350 AlInGaP
Green ASMT-MG00 43.0 60.0 73.0 350 InGaN
Blue ASMT-MB00 11.5 15.0 25.5 350 InGaN
Cool White ASMT-MW00 43.0 60.0 73.0 350 InGaN
Warm White ASMT-MY00 43.0 50.0 73.0 350 InGaN
Notes
1. fV is the total luminous ux output as measured with an integrating sphere at 25 ms mono pulse condition.
2. Flux tolerance is ± 10 %.
[1,2]
(lm)
V
Test Current
(mA)
Dice
TechnologyMin. Typ. Max.
2
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Part Numbering System
Color Bin Selection
Max Flux Bin Selection
Min Flux Bin Selection
ASMT-M x 00 – N x1x
2
x
3
0
Packaging Option
0 – Tube
1 – Tape & Reel
Color
R – Red
A – Amber
B - Blue
G - Green
W - Cool White
Y - Warm White
Absolute Maximum Ratings (TA = 25°C)
Parameter ASMT-Mx00 Units
DC Forward Current
Peak Pulsing Current
Power Dissipation for AlInGaP 1050 mW
Power Dissipation for InGaN 1400 mW
LED Junction Temperature for AlInGaP 125 °C
LED Junction Temperature for InGaN 110 °C
Operating Ambient Temperature Range -40 to +100 °C
Storage Temperature Range -40 to +120 °C
[1]
[2]
350 mA
500 mA
Notes:
1. DC forward current – derate linearly based on Figure 5 for AlInGaP & Figure 11 for InGaN.
2. Pulse condition duty factor = 10%, Frequency = 1kHz.
3
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Optical Characteristics (TA = 25 °C)
Peak Wavelength
l
(nm)
Part Number Color
ASMT-MR00-AGH00 Red 635 625 120 42
ASMT-MR00-AHJ00 Red 635 625 120 48
ASMT-MA00-AGH00 Amber 598 590 120 42
ASMT-MG00 Green 519 525 120 48
ASMT-MB00 Blue 460 467 120 12
PEAK
Typ.
Correlated Color Temperature,
CCT (Kelvin)
Part Number Color
ASMT-MW00 Cool White 4000 10000 110 48
ASMT-MY00 Warm White 2600 4000 110 40
Notes:
1. The dominant wavelength, lD, is derived from the CIE Chromaticity Diagram and represents the color of the device.
2. q
is the o-axis angle where the luminous intensity is 1/2 the peak intensity.
1/2
Min. Max. Typ. Typ.
Dominant Wavelength
[1]
lD
(nm)
Typ.
Viewing Angle
[2]
2q
(Degrees)
1/2
Typ.
Viewing Angle
[2]
2q
(Degrees)
½
Luminous Eciency
(lm/W)
Typ.
Luminous Eciency
(lm/W)
Electrical Characteristic (TA = 25°C)
Forward Voltage
VF (Volts) @ IF = 350mA
Dice Type
AlInGaP 2.0 2.4 3.0 5 12
InGaN 3.2 3.6 4.0 5 10
Notes:
1. R
is Thermal Resistance from LED junction to metal slug.
qJ-ms
Min Typ. Max. Max. Typ.
Reverse Voltage
VR (Volts)
Thermal Resistance
(°C/W)
[1]
Rq
j-ms
4