The TSEV83102G0B Evaluati on Board (EB) is a p rototype board which has been
designed in order to facilitate the evaluation and the characterization of the
TS83102G0B device (in CBGA152) up to its 3 GHz full power bandwidth at up to 2 Gsps
in the extended temperature range.
The high speed of th e TS831 02G0 B requi res careful atten tion t o ci rcuit d esig n and layout to achieve optimal per formanc e. This four met al layer board w ith an inter nal groun d
plane has the function s that allow a quic k and simple ev aluation of the TS83102G0B
ADC performances over the temperature range.
The TS83102G0B Evaluation Board (EB) is very straightforward as it only implements
the TS83102G0B ADC device, SMA connectors for input/output accesses and a
2.54 mm pitch connec tor com patible with high speed ac qui siti on s y ste m hig h freq uen cy
probes.
The board has been desi gned to be fully co mpatible with Atme l’s DMUX evaluatio n
board (TSEV81102G0).
The board also implements a de-embedding fixture in order to facilitate the evaluation of
the high frequency insertion loss of the input microstrip lines.
The board is constructed l ike a sand wich of two dielec tric layers , featuring low inser tion
loss and enhanced thermal characteristics for operation in the high frequency domain
and extended temperature range.
The board dimensions are 120 mm x 150 mm.
The board set comes fully assembled and tested, with the TS83102G0B installed and
with a heatsink.
TSEV83102G0B - Evaluation Board User Guide1-1
Rev. 2166B–BDC–04/03
Overview
1.2TSEV83102G0B
Evaluation Board
Figure 1-1. TSEV83102G0B Block Diagram
CLK
Differential
Clock inputs
CLKB
VIN
Differential
analog inputs
VINB
TEST
GAIN
Z0 = 50Ω
Z0 = 50Ω
Z0 = 50Ω
Z0 = 50Ω
VEE
CLK
CLKB
TS83102G0B
VIN
VINB
GA
PGEB
DRRB
VCC
GND
VPLUSD
VEE
DR/DRB
D0/D0B
D7/D7B
PC/PCB
VCC = +5V
GND = 0V
VPLUSD = -0.8V (ECL)
VPLUSD = 1.6V (LVDS)
VEE = -5V
Z0 = 50Ω
Z0 = 50Ω
Z0 = 50Ω
Z0 = 50Ω
DRRB
CAL1
CAL2
VCC
VEE
GND
DVEE
SDA
OA
+5V
+5V
+5V
DVEE
SDA
SDAEN
L = 50 mm typ
LVIN/VINb = LCLK/CLKb = 43 mm typ
Loutputs = 58 mm typ
Short-circuit
possibility
here
DIODE
DVEE = -5V
J - diode
V - diode
VEE
B/BG
V-GND
I-GND
1-2TSEV83102G0B - Evaluation Board User Guide
2166B–BDC–04/03
Overview
1.3Board
Mechanical
Characteristics
The board’s layer number, thickness, and functions are given below, from top to bottom.
Table 1-1. Board’s Layer Thickness Profile
LayerCharacteristics
Layer 1
Copper layer
Layer 2
RO4003 dielectric layer
(Hydrocarbon/Wovenglass)
Layer 3
Copper layer
Layer 4
BT/Epoxy dielectric layer
Layer 5
Copper layer
Layer 6
BT/Epoxy dielectric layer
Layer 7
Copper layer
Copper thickness = 40 µm
AC signal traces = 50Ω microstrip lines
DC signal traces (B/GB, GAIN, DIODE, OA, TEST, SDA)
The TSEV83102G0B is an ele ven la yer PC B made of s ix copper laye rs and five die lectric layers. The si x metal la yers corres pond respec tively from top to bottom to the A C
and DC signals layer (layer 1), two ground layers (layers 3 and 5), and one supply layer
(layer 7).
Considering the s evere mec hanica l constr aints due to the wide temperat ure rang e and
the high frequency domain in which the board is to operate, it is necessary to use a
sandwich of two different dielectric materials, with specific characteristics:
A low insertion loss RO4003 Hydrocarbon/Wovenglass dielectric layer of 200 µm
thickness, chosen for its low loss (-0.318 dB/inch) and enhanced dielectric
consistency in the high frequency domain. The RO4003 dielectric layer is dedicated
to the routing of the 50Ω impedance signal traces (the RO4003 typical dielectric
constant is 3.4 at 10 GHz). The RO4003 dielectric layer characteristics are very close
to PTFE in terms of insertion loss characteristics.
A BT/Epoxy dielectric layer of 0.9 mm total thickness which is sandwiched between
the upper ground plane and the back-side supply layer.
TSEV83102G0B - Evaluation Board User Guide1-3
2166B–BDC–04/03
Overview
The BT/Epoxy layer has been ch os en be ca us e of i ts e nhanced mechanical charac teri stics for elevated temperature operation. The typical dielectric constant is 4.5 at 1 MHz.
More precisely, the BT/E poxy diel ectric layer offe rs enha nced ch aracteris tics co mpare d
to FR4 Epoxy, namely:
Higher operating temperature values: 170°C (125°C for FR4).
Better withstanding of thermal shocks (-65°C up to 170°C).
The total board thi ckness is 1.6 mm. The prev iously desc ribed mechani cal and frequency characteristics makes the board particularly suitable for device evaluation and
characterization in the high frequency domain and in military temperature ranges.
1.4Analog Input,
Clock Input and
De-embedding
Fixture Access es
1.5Digital Outputs
Accesses
1.6Power Supplies
and Ground
Accesses
1.7ADC Function
Setting Accesse s
The differential active inputs (Analog, Clock, De-embedding fixture) are provided by
SMA connectors.
Reference: VITELEC 142-0701-851.
Connector mounting plates have been used for fastening the SMA connectors.
Access to the differential output data port is provided by a 2.54 mm pitch connector,
compatible with the high spee d digital acqui sition syst em. It enables acc ess to the converter output data, as well as proper 50Ω differential termination.
The power supply accesses are provided by five 2 mm section banana jacks respectively for DV
The power supply access is provided by one 4 mm section banana jack for V
The Ground accesses are provided by four 2 mm and one 4 mm banana jacks.
For ADC function setting accesses (B/GB, Die junction temp., Test), 2 mm section
banana jacks are provided.
Three potentiometers a re provided for ADC gain adj us t, S am pli ng de la y adj ust and O ffset adjust.
EE
, V
EET
, VDD, V
PLUSD
and VCC.
EE
.
One sub-screw is provided for Asynchronous data ready reset.
1-4TSEV83102G0B - Evaluation Board User Guide
2166B–BDC–04/03
Section 2
Layout Information
2.1Board
2.2AC Inputs/Digital
Outputs
The TS83102G0B requires proper board layout for optimum full speed operation.
The following explains th e board l ayout recomm endations a nd demonstrates how the
Evaluation Board fulfills these implementation constraints.
A single low impedance ground plane is rec ommended, since it allows the user to lay
out signal traces and power planes without interrupting the ground plane.
Therefore a multi-layer board structure has been retained for the TSEV83102G0B.
Six copper metal layers are used, dedicated respectively (from top to bottom) to the sig-
nal traces, ground planes and power supplies.
The board uses 50Ω impedance micros trip line s for the diffe rentia l analog i nputs, cloc k
inputs, and differential digital outputs.
The input signals an d c lock si gna ls mus t b e r oute d on one l ay er on ly, without using any
through-hole vias. The line lengths are matched to within 2 mm.
The digital output lines are 50Ω differentially terminated.
The output data trace lengths are matched to within 0.25 inch (6 mm) to min imize the
data output delay skew.
For the TSEV83102G0B the propagation delay is approximately 6.1 ps/mm
(155 ps/inch). The RO4003 typical dielectric constant is 3.4 at 10 GHz.
For more informations about different output termination options refer to the specifica-
tion application notes.
2.3DC Function
Settings
TSEV83102G0B - Evaluation Board User Guide2-1
The DC signal traces are low impedance.
They have been routed with a 50Ω impeda nce near the devic e because of spac e
restriction.
Rev. 2166B–BDC–04/03
Layout Information
2.4Power Supplies
The bottom metal layers 5 and 7 and 11 are dedicated to power supply traces (VEE,
DV
, V
EE
, VDD, V
EET
PLUSD
and VCC).
The supply traces are approximately 6 mm wide in order to present low impedance, and
are surrounded by a ground plane connected to the two inner ground planes.
The analog and digital negative power supply traces are independent, but the possibility
exists to short-circuit both supplies on the top metal layer).
No difference in ADC high speed performance is observed when connecting both negative supply planes together. Obviously one single negative supply plane could be used
for the circuit.
Each power supply incoming is bypassed by a 1 µF Tantalum capacitor in parallel with
1 nF chip capacitor.
Each power supply access is decoupled very close to the device by 10 nF and 100 pF
surface mount chip capacitors in parallel.
Note:The decoupling capacitors are superposed. In this configuration, the 100 pF capacitors
must be mounted first.
2-2TSEV83102G0B - Evaluation Board User Guide
2166B–BDC–04/03
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