The PA05 is a high voltage MOSFET power operational
amplifier that extends the performance limits of power amplifiers in slew rate and power bandwidth, while maintaining high
current and power dissipation ratings.
The PA05 is a highly flexible amplifier. The shutdown control
feature allows the output stage to be turned off for standby
operation or load protection during fault conditions. Boost
voltage inputs allow the small signal portion of the amplifier to
operate at a higher voltage than the high current output stage.
The amplifier is then biased to achieve close linear swings to
the supply rails at high currents for extra efficient operation.
External compensation tailors slew rate and bandwidth performance to user needs. A four wire sense technique allows
precision current limiting without the need to consider internal
or external milliohm parasitic resistance in the output line. The
output stage is protected by thermal limiting circuits above
junction temperatures of 175°C.
PA05A
∆
USA BeO
TE949311
The JEDEC MO-127 12-pin Power Dip™ package (see
Package Outlines) is hermetically sealed and isolated from
the internal circuits. The use of compressible thermal washers
and/or improper mounting torque will void the product warranty. Please see “General Operating Considerations”.
TYPICAL APPLICATION
The high power bandwidth of the PA05 allows driving sonar
transducers via a resonant circuit including the transducer and
a matching transformer. The load circuit appears resistive to
the PA05. Control logic turns off the amplifier's output during
shutdown.
SUPPLY VOLTAGE, +VS to –V
BOOST VOLTAGESUPPLY VOLTAGE +20V
S
100V
OUTPUT CURRENT, continuous within SOA30A
POWER DISSIPATION, internal250W
INPUT VOLTAGE, differential±20V
INPUT VOLTAGE, common mode±V
TEMPERATURE, pin solder - 10s300°C
TEMPERATURE, junction
2
B
175°C
TEMPERATURE, storage–65 to +150°C
OPERATING TEMPERATURE RANGE, case –55 to +125°C
SPECIFICATIONS
PARAMETERTEST CONDITIONS
PA05
1
MINTYPMAXMINTYPMAXUNITS
PA05A
INPUT
OFFSET VOLTAGE, initial51025mV
OFFSET VOLTAGE, vs. temperatureFull temperature range20501030µV/°C
OFFSET VOLTAGE, vs. supply1030**µV/V
OFFSET VOLTAGE, vs. powerFull temperature range3010µV/W
BIAS CURRENT, initial1050520pA
BIAS CURRENT, vs. supply.01*pA/V
OFFSET CURRENT, initial1050520pA
INPUT IMPEDANCE, DC10
11
*Ω
INPUT CAPACITANCE13*pF
COMMON MODE VOLTAGE RANGEFull temperature range±VB–8*V
COMMON MODE REJECTION, DCFull temp. range, VCM = ±20V90100**dB
INPUT NOISE100KHz BW, RS = 1KΩ10*µVrms
GAIN
OPEN LOOP, @ 15HzFull temperature range, CC = 82pF94102**dB
GAIN BANDWIDTH PRODUCTRL = 10Ω3*MHz
POWER BANDWIDTHRL = 4Ω, VO = 80V
CC = 82pF, RC = 120Ω
, AV = –10400*kHz
P-P
PHASE MARGINFull temperature range, CC = 470pF60*°
OUTPUT
VOLTAGE SWINGIO = 20A±VS–9.5 ±VS–8.7**V
VOLTAGE SWINGV
CURRENT, peak30*A
= Vs + 5V, IO = 30A±VS–5.8 ±VS–5.0**V
BOOST
SETTLING TIME to .1%AV = +1, 10V step, RL = 4Ω2.5*µs
SLEW RATEAV = –10, CC = 82pF, RC = 120Ω80100*V/µs
CAPACITIVE LOADFull temperature range, AV = +12.2*n F
RESISTANCEIO = 0, No load, 2MHz5*Ω
RESISTANCE, AC, junction to case
RESISTANCE, DC, junction to caseFull temperature range, F<60Hz.4.5**°C/W
RESISTANCE, junction to air
3
Full temperature range, F>60Hz.3.4**°C/W
4
Full temperature range12*°C/W
TEMPERATURE RANGE, caseMeets full range specification–2585**°C
NOTES: *The specification of PA05A is identical to the specification for PA05 in applicable column to the left.
1.Unless otherwise noted: TC = 25°C, CC = 470pF, RC = 120 ohms. DC input specifications are ± value given. Power supply
voltage is typical rating. ±V
2.Long term operation at the maximum junction temperature will result in reduced product life. Derate internal power dissipation
BOOST
= ±VS.
to achieve high MTTF. For guidance, refer to the heatsink data sheet.
3.Rating applies if the output current alternates between both output transistors at a rate faster than 60 Hz.
4.The PA05 must be used with a heatsink or the quiescent power may drive the unit to junction temperatures higher than 150°C.
CAUTION
The PA05 is constructed from MOSFET transistors. ESD handling procedures must be observed.
The internal substrate contains beryllia (BeO). Do not break the seal. If accidentally broken, do not crush, machine, or
subject to temperatures in excess of 850°C to avoid generating toxic fumes.
APEX MICROTECHNOLOGY CORPORATION • 5980 NORTH SHANNON ROAD • TUCSON, ARIZONA 85741 • USA • APPLICATIONS HOTLINE: 1 (800) 546-2739
Please read the
which covers stability, supplies, heatsinking, mounting, current limit, SOA interpretation, and specification interpretation.
Additional information can be found in the application notes.
For information on the package outline, heatsinks, and mounting hardware, consult the
Data
section of the handbook. The EK04 Evaluation Kit makes
prototype circuits a snap by providing an EK04PC proto circuit
board, MS05 mating socket, HS11 heatsink and hardware kit.
General Operating Considerations
Accessory and Package Mechanical
section,
CURRENT LIMIT
The two current limit sense lines are to be connected directly
across the current limit sense resistor.
For the current limit to
work correctly, pin 11 must be connected to the amplifier
output side and pin 10 connected to the load side of the current
limit resistor, RCL, as shown in Figure 1.
This connection will
bypass any parasitic resistances, RP formed by sockets and
solder joints as well as internal amplifier losses. The current
limiting resistor may not be placed anywhere in the output
circuit except where shown in Figure 1. If current limiting is not
used, pins 10 and 11 must be tied to pin 7.
The value of the current limit resistor can be calculated as
follows:
R
INPUT
FIGURE 1. CURRENT LIMIT
10
i
1
PA05
2
CL
R
f
11
7
CL
I
= .7/R
LIMIT
R
R
CL
P
R
L
CL
SAFE OPERATING AREA (SOA)
The MOSFET output stage of this power operational ampli-
fier has two distinct limitations:
1. The current handling capability of the MOSFET geometry
and the wire bonds.
2. The junction temperature of the output MOSFETs.
NOTE: The output stage is protected against transient flyback.
However, for protection against sustained, high energy
flyback, external fast-recovery diodes should be used.
30
15
12
9
6
3
1.5
OUTPUT CURRENT (A)
1.2
.9
.6
.3
1
2510
3420
SUPPLY TO OUTPUT DIFFERENTIAL
DC Tc = 125°C
t = 200ms
DC Tc = 25°C
DC Tc = 85°C
30
40 50
100
SHUTDOWN OPERATION
To disable the output stage, pin 12 is connected to ground
via relay contacts or via an electronic switch. The switching
device must be capable of sinking 2mA to complete shutdown
and capable of standing off the supply voltage +V
. See Figure
S
2 for suggested circuits.
–LOGIC
A
–LOGIC
B
FIGURE 2. SHUTDOWN OPERATION
470Ω
K1
Q1
12
SHUTDOWN
12
SHUTDOWN
From an internal circuitry standpoint, shutdown is just a
special case of current limit where the allowed output current
is zero. As with current limit, however, a small current does flow
in the output during shutdown. A load impedance of 100 ohms
or less is required to insure the output transistors are turned off.
Note that even though the output transistors are off the output
pin is not open circuited because of the shutdown operating
current.
BOOST OPERATION
With the V
amplifier are operated at higher supply voltages than the
amplifier’s high current output stage. +V
–V
(pin 5) are connected to the small signal circuitry of
BOOST
the amplifier. +V
high current output stage. An additional 5V on the V
is sufficient to allow the small signal stages to drive the output
transistors into saturation and improve the output voltage
swing for extra efficient operation when required. When close
swings to the supply rails is not required the +V
pins must be strapped together as well as the –V
pins. The boost voltage pins must not be at a voltage lower than
the V
pins.
S
feature, the small signal stages of the
BOOST
(pin 9), and
BOOST
(pin 8) and –VS (pin 6) are connected to the
S
BOOST
and +V
BOOST
and –V
BOOST
pins
COMPENSATION
The external compensation components CC and RC are
connected to pins 3 and 4. Unity gain stability can be achieved
at any compensation capacitance greater than 470 pF with at
least 60 degrees of phase margin. At higher gains, more phase
shift can be tolerated in most designs and the compensation
capacitance can accordingly be reduced, resulting in higher
bandwidth and slew rate. Use the typical operating curves as
a guide to select C
and RC for the application.
C
S
S
This data sheet has been carefully checked and is believed to be reliable, however, no responsibility is assumed for possible inaccuracies or omissions. All specifications are subject to change without notice.