ANPEC APM4408KC-TU, APM4408KC-TR Datasheet

N-Channel Enhancement Mode MOSFET

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Mar., 2002

APM4408

www.anpec.com.tw1

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Pin Description

Ordering and Marking Information

Features

Applications

• Power Management in Notebook Computer,

Portable Equipment and Battery Powered
Systems

SO − 8

APM 4408

Handling Code
Temp. Range
Package Code

Package Code
K : SO -8
Operation Junction Temp. Range
C : -55 to 125°C
Handling Code
TU : T u b e
TR : T a p e & R ee l

APM 4408 K :

APM 4408
XXXXX

XXXXX - Date Code

• 20V/21A, R

DS(ON)

= 3.5mΩ(typ.) @ VGS = 10V

R

DS(ON)

= 5mΩ(typ.) @ VGS = 4.5V

R

DS(ON)

= 8mΩ(typ.) @ VGS = 2.5V

••

••

•

High Density Cell Design

••

••

•

Reliable and Rugged

••

••

•

SO-8 Package

Symbol

Parameter Rating Unit

V

DSS

Drain-Source Voltage 20

V

GSS

Gate-Source Voltage ±16

V

I

D

*

Maximum Drain Current – Continuous 21

I

DM

Maximum Drain Current – Pulsed 60

A

* Surface Mounted on FR4 Board, t ≤ 10 sec.

Absolute Maximum Ratings (T

A

= 25°C unless otherwise noted)

N-Channel MOSFET

G

S

D

1

2

3

45

6

7

8S

S

S

GD

D

D

D

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Mar., 2002

APM4408

www.anpec.com.tw2

Electrical Characteristics (T

A

= 25°C unless otherwise noted)

Absolute Maximum Ratings Cont. (T

A

= 25°C unless otherwise noted)

Symbol

Parameter Rating Unit

TA=25°C

1.6

P

D

Maximum Power Dissipation

T

A

=100°C

0.625

W

T

J

Maximum Junction Temperature 150

°

C

T

STG

Storage Temperature Range -55 to 150

°

C

R

θ

JA

Thermal Resistance – Junction to Ambient 80

°

C/W

APM4408

Symbol Parameter Test Condition

Min. Typ. Max.

Unit

Static

BV

DSS

Drain-Source Breakdown
Voltage

V

GS

=0V , IDS=250µA

20 V

I

DSS

Zero Gate Voltage Drain
Current

V

DS

=18V , VGS=0V 1

µ

A

V

GS(th)

Gate Threshold Voltage

V

DS=VGS

, IDS=250µA

0.8 1.5

V

I

GSS

Gate Leakage Current

V

GS

=±16V , VDS=0V

±

100

nA

VGS=10V , IDS=21A

3.5 4.5

VGS=4.5V , IDS=17A

56

R

DS(ON)

a

Drain-Source On-state
Resistance

V

GS

=2.5V , IDS=10A

810

m

Ω

V

SD

a

Diode Forward Voltage ISD=2.9 A , VGS=0V

0.6 1.3

V

Dynamic

b

Q

g

Total G ate Charg e

45 65

Q

gs

Gate-Source Charge

20

Q

gd

Gate-Dra in C harge

V

DS

=10V , IDS= 21A

V

GS

=4.5V ,

17

nC

t

d(ON)

Turn-on De lay T im e

35 50

T

r

Turn - on Ris e Time

19 28

t

d(OFF)

Turn-off Delay Time

110 170

T

f

Turn-off Fall Time

V

DD

=10 V , IDS=1A ,

V

GEN

=4.5V , RG=6

Ω

60 75

ns

C

iss

Input Capacitance

5300

C

oss

Output Capacitance

1000

C

rss

Reverse Transfer Capacitance

VGS=0V
V

DS

=15V

Frequency=1.0MHz

300

pF

Notes

a

: Guaranteed by design, not subject to production testing

b

: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Mar., 2002

APM4408

www.anpec.com.tw3

Typical Characteristics

012345

0

10

20

30

40

50

Output Characteristics

VDS-Drain-to-Source Voltage (V)

I

DS

-Drain Current (A)

VGS=4,5,6,7,8,9,10V

VGS=3V

0123456

0

10

20

30

40

50

Transfer Characteristics

VGS-Gate-to-Source Voltage (V)

I

DS

-Drain Current (A)

TJ=125°C

TJ=25°C

TJ=-55°C

-50 -25 0 25 50 75 100 125 150

0.00

0.25

0.50

0.75

1.00

1.25

1.50

Threshold Voltage vs. Junction Temperature

Tj-Junction T emperature (°C)

IDS=250µA

0 1020304050

0.000

0.001

0.002

0.003

0.004

0.005

0.006

0.007

0.008

On-Resistance vs. Drain Current

IDS-Drain Current (A)

R

DS(ON)

-On-Resistance (Ω)

VGS=10V

VGS=4.5V

VGS(th)-Threshold Voltage (V)

(Normalized)