APM4230
N-Channel Enhancement Mode MOSFET
Features
• 25V/16A , R
••
• Super High Dense Advanced Cell Design for
••
Extremely Low R
= 7mΩ(typ.) @ VGS= 4.5V
DS(ON)
DS(ON)
Pin Description
• Reliable and Rugged
• SOP-8 Package
Applications
• Power Management in Desktop Computer or
DC/DC Converters.
Ordering and Marking Information
APM 4230
Lead Free Code
Handling Code
Tem p. Range
Package Code
Package Code
K : S O - 8
Operating Junction Temp. Range
C : -5 5 to 1 5 0 C
Handling Code
TU : Tube TR : Tape & R eel
Lead Free Code
L : Lead Free Device B lank : Orginal Device
1
S
S
GD
2
3
45
8S
7
6
D
D
D
SO − 8
D
G
S
N-Channel MOSFET
°°°°
APM 4230K :
APM4230
XXXXX
Absolute Maximum Ratings
XXXXX
(TA = 25°C unless otherwise noted)
- Da te C o d e
Symbol Parameter Rating Unit
V
Drain-Source Voltage 25
DSS
V
Gate-Source Voltage ±20
GSS
*
I
Maximum Drain Current – Continuous 16
D
IDM Maximum Drain Current – Pulsed 60
V
A
* Surface Mounted on FR4 Board, t ≤ 10 sec.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.1 - Aug., 2003
www.anpec.com.tw1
APM4230
q
Absolute Maximum Ratings (Cont.) (T
= 25°C unless otherwise noted)
A
Symbol Parameter Rating Unit
PD
Maximum Power Dissipation
=100°C
T
A
TJ Maximum Junction Temperature 150
T
Storage Temperature Range -55 to 150
STG
*
TA=25°C
R
θ
JA
Thermal Resistance – Junction to Ambient 50
2.5
W
1.0
°C
°C
°C/W
Electrical Characteristics (T
Symbol Parameter Test Condition
= 25°C unless otherwise noted)
A
Min.
APM4230
Typ. Max.
Unit
Static
BV
V
I
DSS
GS(th)
I
GSS
Drain-Source Breakdown
DSS
Voltage
Zero Gate Voltage Drain
Current
Gate Threshold Voltage
Gate Leakage Current
V
GS
V
DS
V
DS=VGS
V
GS
VGS=4.5V , IDS=16A
Drain-Source On-state
R
a
DS(ON)
Resistance
a
V
Diode Forward Voltage IS=16A , VGS=0V
SD
V
GS
T
=125°C ,
J
=0V , IDS=250µA
25
=20V , VGS=0V 1
, IDS=250µA
=±20V , VDS=0V
1 1.5 2
±100
7 8
=4.5V , IDS=16A
10.5 12
0.7 1.2
V
A
µ
V
nA
mΩ
V
Dynamicb
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
t
Turn-o n Delay Time
d(ON)
Tr Turn-on Rise Time
t
Turn-off Delay Time
d(OFF)
V
=15V , IDS=16A
DS
=4.5V ,
V
GS
=15V , IDS=1A ,
V
DD
V
GEN
Tf Turn-o ff Fall Time
C
Input Capacitance
iss
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
rss
Notes
a
: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
b
: Guaranteed by design, not subject to production testing
VGS=0V
V
=15V
DS
Fre
=10V , RG=6Ω
uency=1.0MHz
30 40
13
10
13 20
9 15
43 66
14 28
3000
660
330
nC
ns
pF
Copyright ANPEC Electronics Corp.
Rev. A.1 - Aug., 2003
www.anpec.com.tw2
APM4230
Typical Characteristics
Output Characteristics
60
VGS= 4,5,6,7,8,9,10V
50
40
30
20
-Drain Current (A)
DS
I
10
0
0246810
VGS=3V
VGS=2.5V
VGS=2V
VDS-Drain-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
1.2
IDS=250µA
Transfer Characteristics
60
50
40
Tj=125oC
30
-Drain Current (A)
20
DS
I
10
0
012345
Tj=25oC
Tj=-55oC
VGS-Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.009
1.0
0.8
(Normalized)
0.6
VGS(th)-Threshold Voltage (V)
0.4
-50 -25 0 25 50 75 100 125 150
Tj-Junction T emperature (°C)
Copyright ANPEC Electronics Corp.
Rev. A.1 - Aug., 2003
-On-Resistance (Ω)
DS(ON)
R
0.008
VGS=4.5V
0.007
0.006
0.005
0.004
0 102030405060
IDS-Drain Current (A)
www.anpec.com.tw3
APM4230
Typical Characteristics (Cont.)
On-Resistance vs. Gate-to-Source Voltage On-Resistaence vs. Junction Temperature
0.020
0.016
0.012
0.008
-On-Resistance (Ω)
DS (ON)
0.004
R
0.000
0246810
VGS-Gate-to-Source Voltage (V) Tj-Junction T emperature (°C)
Gate Charge
10
VDS=10V
I
=16A
DS
8
1.6
ID= 16A
1.4
1.2
VGS=4.5V
IDS=16A
1.0
(Normalized)
-On Resistance (Ω)
DS(ON)
0.8
R
0.6
-50 -25 0 25 50 75 100 125 150
Capacitance
5000
4000
Frequency=1MHz
6
4
2
-Gate-to-Source Voltage (V)
GS
V
0
0 102030405060
QG-T otal Gate Charge (nC)
Copyright ANPEC Electronics Corp.
Rev. A.1 - Aug., 2003
Ciss
3000
2000
Capacitance (pF)
1000
0
0 5 10 15 20 25
Coss
Crss
VDS-Drain-to-Source Voltage (V)
www.anpec.com.tw4
APM4230
Typical Characteristics (Cont.)
Source-Drain Diode Forward Voltage
16
10
Tj=125oC
1
-Source Current (A)
S
I
0.1
0.0 0.3 0.6 0.9 1.2 1.5
Tj=-55oC
Tj=25oC
VSD-Source-to-Drain Voltage (V)
Normalized Transient Thermal Transient Impedence, Junction to Ambient
2
Single Pulse Power
80
60
40
Power (W)
20
0
0.01 0.1 1 10 30
Time (sec)
1
Duty Cycle=0.5
D=0.2
D=0.1
0.1
D=0.05
Thermal Impedance
Normalized Effective Transient
D=0.02
D=0.01
SINGLE PULSE
0.01
1E-4 1E-3 0.01 0.1 1 10 30
Copyright ANPEC Electronics Corp.
Rev. A.1 - Aug., 2003
Square Wave Pulse Duration (sec)
1. Duty Cycle , D=t1/t2
2. Per Unit Base=R
3. TJM-TA=PDMZ
4. Surface Mounted
thJA
thJA
www.anpec.com.tw5
=50°C/W
APM4230
Package Informaion
SOP-8 pin ( Reference JEDEC Registration MS-012)
HE
0.015X45
e1 e2
D
A1
A
1
L
0.004max.
Dim
A 1.35 1.75 0.053 0.069
A1 0.10 0.25 0.004 0. 010
D 4.80 5.00 0.189 0.197
E 3.80 4.00 0.150 0.157
H 5.80 6.20 0.228 0.244
L 0.40 1.27 0.016 0.050
e1 0.33 0. 51 0.013 0.020
e2 1.27BSC 0.50BS C
18
φ
Millimeters Inches
Min. Max. Min. Max.
°
8
°
Copyright ANPEC Electronics Corp.
Rev. A.1 - Aug., 2003
www.anpec.com.tw6
APM4230
Physical Specifications
Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition (IR/Convection or VPR Reflow)
Reference JEDEC Standard J-STD-020A APRIL 1999
Peak temperature
temperature
Pre-heat temperature
°
183 C
Classification Reflow Profiles
Convection or IR/
Convection
Average ramp-up rate(183°C to Peak) 3°C/second max. 10°C /second max.
Preheat temperature 125± 25°C)
°
Temperature maintained above 183
Time within 5°C of actual peak temperature
Peak temperature range
Ramp-down rate
Time 25°C to peak temperature
C
120 seconds max.
60 ~ 150 seconds
10 ~ 20 seconds
°
220 +5/-0
°
C /second max. 10°C /second max.
6
6 minutes max.
C or 235 +5/-0°C 215~ 219°C or 235 +5/-0°C
60 seconds
VPR
Time
Package Reflow Conditions
pkg. thickness
and all bags
Convection 220 +5/-0°C
VPR 215-219°C
IR/Convection 220 +5/-0
Copyright ANPEC Electronics Corp.
Rev. A.1 - Aug., 2003
2.5mm
≥≥≥≥
°
C IR/Convection 235 +5/-0
pkg. thickness < 2.5mm and
pkg. volume
≥≥≥≥
350 mm
pkg. thickness < 2.5mm and pkg.
volume <
°
Convection 235 +5/-0
VPR 235 +5/-0
°
C
C
°
C
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APM4230
Reliability test program
T est item Method Description
SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles
Carrier Tape & Reel Dimension
t
W
E
F
Po
A
P
P1
Ao
J
D
Bo
D1
C
Ko
T2
B
T1
Application
A B C J T1 T2 W P E
330±3 100 ± 2 13 ± 0. 5 2 ± 0.5
F D D1 Po P1 Ao Bo Ko tTO-252
7.5 ± 0.1 1.5± 0.1
1.5+ 0.25
4.0 ± 0.1 2.0 ± 0.1 6.8 ± 0.1 10.4± 0.1 2.5± 0.1 0.3±0.05
16.4 +0.3
-0.2
2.5± 0.5
16 + 0.3
16 - 0.1
8 ± 0.1 1.75± 0.1
(mm)
Copyright ANPEC Electronics Corp.
Rev. A.1 - Aug., 2003
www.anpec.com.tw8
APM4230
Cover Tape Dimensions
Application Carrier Width Cover Tape Width Devices Per Reel
TO- 252
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, T aiwan, R.O.C.
T el : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
T el : 886-2-89191368
Fax : 886-2-89191369
16 13.3 2500
Copyright ANPEC Electronics Corp.
Rev. A.1 - Aug., 2003
www.anpec.com.tw9
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