ANPEC APM4230KC-TUL, APM4230KC-TU, APM4230KC-TRL, APM4230KC-TR Datasheet

APM4230

N-Channel Enhancement Mode MOSFET

Features

• 25V/16A , R

••

• Super High Dense Advanced Cell Design for

••

Extremely Low R

= 7mΩ(typ.) @ VGS= 4.5V

DS(ON)

DS(ON)

Pin Description

• Reliable and Rugged

• SOP-8 Package

Applications

• Power Management in Desktop Computer or

DC/DC Converters.

Ordering and Marking Information

APM 4230

Lead Free Code
Handling Code

Tem p. Range
Package Code

Package Code
K : S O - 8
Operating Junction Temp. Range
C : -5 5 to 1 5 0 C
Handling Code
TU : Tube TR : Tape & R eel
Lead Free Code
L : Lead Free Device B lank : Orginal Device

1

S

S

GD

2

3

45

8S

7

6

D

D

D

SO − 8

D

G

S

N-Channel MOSFET

°°°°

APM 4230K :

APM4230
XXXXX

Absolute Maximum Ratings

XXXXX

(TA = 25°C unless otherwise noted)

- Da te C o d e

Symbol Parameter Rating Unit

V

Drain-Source Voltage 25

DSS

V

Gate-Source Voltage ±20

GSS

*

I

Maximum Drain Current – Continuous 16

D

IDM Maximum Drain Current – Pulsed 60

V

A

* Surface Mounted on FR4 Board, t ≤ 10 sec.

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Aug., 2003

www.anpec.com.tw1

APM4230

q

Absolute Maximum Ratings (Cont.) (T

= 25°C unless otherwise noted)

A

Symbol Parameter Rating Unit

PD

Maximum Power Dissipation

=100°C

T

A

TJ Maximum Junction Temperature 150

T

Storage Temperature Range -55 to 150

STG

*

TA=25°C

R

θ

JA

Thermal Resistance – Junction to Ambient 50

2.5
W

1.0

°C
°C

°C/W



Electrical Characteristics (T

Symbol Parameter Test Condition

= 25°C unless otherwise noted)

A

Min.

APM4230

Typ. Max.

Unit

Static

BV

V

I

DSS

GS(th)

I

GSS

Drain-Source Breakdown

DSS

Voltage
Zero Gate Voltage Drain

Current

Gate Threshold Voltage

Gate Leakage Current

V

GS

V

DS

V

DS=VGS

V

GS

VGS=4.5V , IDS=16A

Drain-Source On-state

R

a

DS(ON)

Resistance

a

V

Diode Forward Voltage IS=16A , VGS=0V

SD

V

GS

T

=125°C ,

J

=0V , IDS=250µA

25

=20V , VGS=0V 1

, IDS=250µA

=±20V , VDS=0V

1 1.5 2

±100
7 8

=4.5V , IDS=16A

10.5 12

0.7 1.2

V

A

µ

V

nA

mΩ

V

Dynamicb

Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge

t

Turn-o n Delay Time

d(ON)

Tr Turn-on Rise Time

t

Turn-off Delay Time

d(OFF)

V

=15V , IDS=16A

DS

=4.5V ,

V

GS

=15V , IDS=1A ,

V

DD

V

GEN

Tf Turn-o ff Fall Time

C

Input Capacitance

iss

C

Output Capacitance

oss

C

Reverse Transfer Capacitance

rss

Notes

a

: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

b

: Guaranteed by design, not subject to production testing

VGS=0V
V

=15V

DS

Fre

=10V , RG=6Ω

uency=1.0MHz

30 40
13
10
13 20
9 15
43 66
14 28
3000
660
330

nC

ns

pF

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Aug., 2003

www.anpec.com.tw2

APM4230

Typical Characteristics

Output Characteristics

60

VGS= 4,5,6,7,8,9,10V

50

40

30

20

-Drain Current (A)

DS

I

10

0

0246810

VGS=3V

VGS=2.5V

VGS=2V

VDS-Drain-to-Source Voltage (V)

Threshold Voltage vs. Junction Temperature

1.2

IDS=250µA

Transfer Characteristics

60

50

40

Tj=125oC

30

-Drain Current (A)

20

DS

I

10

0

012345

Tj=25oC

Tj=-55oC

VGS-Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current

0.009

1.0

0.8

(Normalized)

0.6

VGS(th)-Threshold Voltage (V)

0.4

-50 -25 0 25 50 75 100 125 150

Tj-Junction T emperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Aug., 2003

-On-Resistance (Ω)

DS(ON)

R

0.008
VGS=4.5V

0.007

0.006

0.005

0.004

0 102030405060

IDS-Drain Current (A)

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