ANPEC APM4220KC-TUL, APM4220KC-TU, APM4220KC-TRL, APM4220KC-TR Datasheet

APM4220

N-Channel Enhancement Mode MOSFET

Features

• 25V/14A, R

R

••

• Super High Dense Cell Design for

••

Extremely Low R

••

• Reliable and Rugged

••

••

• SOP-8 Package

••

=7.5mΩ(typ.) @ VGS=10V

DS(ON)

=10mΩ(typ.) @ VGS=4.5V

DS(ON)

DS(ON)

Pin Description

Applications

• Power Management in Desktop Computer or

DC/DC Converters.

Ordering and Marking Information

APM4220

Lead Free Code
Handling Code
Temp. Range
Package Co de

Package Code
K : SO-8
Operating Junction Temp. Range
C : -55 to 150°C
Handling Code
TU : Tube TR : Tape & Re el
Lead Free Code
L : Lead Free Device Blank : Orginal Device

1

S

S

GD

2

3

45

8S

7

6

D

D

D

SO − 8

D

G

S

N-Channel MOSFET

APM4220 K :

Absolute Maximum Ratings

APM4220
XXXXX

XXXXX - Date C od e

(TA = 25°C unless otherwise noted)

Symbol Parameter Rating Unit

V

Drain-Source Voltage 25

DSS

V

Gate-Source Voltage ±20

GSS

*

I

Maximum Drain Current – Continuous 14

D

IDM Maximum Drain Current – Pulsed 60

V

A

* Surface Mounted on FR4 Board, t ≤ 10 sec.

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise



customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.

Rev. A.1 - Aug., 2002

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APM4220

q

Absolute Maximum Ratings (Cont.) (T

= 25°C unless otherwise noted)

A

Symbol Parameter Rating Unit

PD

Maximum Power Dissipation

=100°C

T

A

TJ Maximum Junction Temperature 150

T

Storage Temperature Range -55 to 150

STG

*

TA=25°C

R

θ

JA

Thermal Resistance – Junction to Ambient 50

2.5
W

1.0

°C
°C

°C/W



Electrical Characteristics (T

Symbol Parameter Test Condition

= 25°C unless otherwise noted)

A

APM4220

Min.

Typ. Max.

Unit

Static

BV

Drain-Source Breakdown Voltage

DSS

I

Zero Gate Voltage Drain Current

DSS

V

Gate Threshold Voltage

GS(th)

I

Gate Leakage Current VGS=±20V, VDS=0V

GSS

a

R

DS(ON)

V

Drain-Source On-state Resistance

a

Diode Forward Voltage IS=16A, VGS=0V

SD

=0V, IDS=250µA

V

GS

=20V , VGS=0V 1 µA

V

DS

V

DS=VGS

VGS=10V, IDS=14A

=4.5V,IDS=8A

V

GS

, IDS=250µA

25

1 1.5 2

±100
 7.5 9
 10 12

0.7 1.2

V

V

nA

mΩ

V

Dynamicb

Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge

t

Turn-on Delay Time

d(ON)

Tr Turn-on Rise Time

t

Turn-off Delay Time

d(OFF)

Tf Turn-off Fall Time

C

Input Capacitance

iss

C

Output Capacitance

oss

C

Reverse Transfer Capacitance

rss



Notes

a

: Guaranteed by design, not subject to production testing

b

: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Aug., 2002

VDS=15V, IDS=14A

=4.5V,

V

GS

V

=15V, IDS=1A,

DD

=10V,RG=6Ω,

V

GEN

VGS=0V
V

=15V

DS

Fre

uency=1.0MHz

16 20
6

nC
6
10 15
7 13
35 50

ns

10 20
1785
605

pF
490

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APM4220

Typical Characteristics

Output Characteristics

60

VGS= 4,5,6,7,8,9,10V

50

40

30

20

-Drain Current (A)

DS

I

10

0

0246810

VGS=3V

VGS=2.5V

VGS=2V

VDS-Drain-to-Source Voltage (V)

Threshold Voltage vs. Junction Temperature

1.2

IDS=250µA

Transfer Characteristics

60

50

40

30

Tj=125oC

20

-Drain Current (A)

D

I

10

0

012345

Tj=25oC

Tj=-55oC

VGS-Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current

0.014

1.0

0.8

(Normalized)

-Thershold Voltage (V)

0.6

GS(th)

V

0.4

-50 -25 0 25 50 75 100 125 150

Tj-Junction T emperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Aug., 2002

-On-Resistance (Ω)

DS(ON)

R

0.012
VGS=4.5V

0.010

0.008

0.006

0.004

0 102030405060

VGS=10V

IDS-Drain Current (A)

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