ANPEC APM3054NVC-TR, APM3054NUC-TR, APM3054NDC-TR Datasheet

APM3054N

N-Channel Enhancement Mode MOSFET

Features

• 30V/15A, R

R

••

•

Super High Dense Cell Design

••

••

• High Power and Current Handling Capability

••

••

• TO-252 and SOT-223 Package

••

=48mΩ(typ.) @ VGS=10V

DS(ON)

=75mΩ(typ.) @ VGS=4.5V

DS(ON)

Pin Description

G DS

Top View of TO-252

Applications

123

• Switching Regulators

• Switching Converters

GDS

Top View of SOT-89

Ordering and Marking Information

APM 3054N

Handling Code
Temp. R ange
Package Code

Package Code

D : S O T -89 U : TO-2 52 V : S O T -22 3

Operating Junction Temp. Range

C : -55 to 125 C

Handling Code

TR : Tape & Reel

123

°

123

SDG

Top View of SOT-223

APM 3054N U :

APM3054N D/V :

APM 3054N
XXXXX

APM 3054N
XXXXX

Absolute Maximum Ratings (T

Symbol

V

DSS

V

GSS

I

D

I

DM

I

S

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Aug., 2002

Drain-Sour ce Voltage 30
Gate-Source Voltage ±20
Maximum Drain Current – Continuous 15
Maximum Drain Current – Pulsed 30
Diode Con t in uous Forwar d Current 8 A

Parameter Rating Unit

XXXXX

XXXXX - Date Code

= 25°C unless otherwise noted)

A

- Da te C o d e

V

A

www.anpec.com.tw1

APM3054N

Absolute Maximum Ratings (Cont.) (T

Symbol

I

SM

Diode Maximum Pulse Current 32 A

Parameter Rating Unit

= 25°C unless otherwise noted)

A

TA=25°C

P

D

T

J

T

STG

Electrical Characteristics (T

Maxim um Power Dissipation

=100°C

T

A

Maximum Junction Temperature
Storage Tem perature Range -55 to 150 °C

= 25°C unless otherwise noted)

A

Symbol Paramet er Test Condition

Static

BV

I

V

DSS

GS(th)

Drain-Source Breakdown

DSS

Voltage
Zero Gate Voltage Drain

Current
Gate Threshold Voltage

V

=0V, IDS=250µA

GS

V

=24V, VGS=0V 1

DS

V

DS=VGS

, IDS=250µA

TO-252 62.5

SOT-223 3

TO-252 25

SOT-223 1.2

150 °C

APM3054N

Min. Typ. Max.

30 V

13V

W

W

Unit

µ

A

I

GSS

R

DS(ON)

V

SD

Dynamic

Q

g

Q

gs

Q

gd

t

d(ON)

t

r

t

d(OFF)

t

f

C

iss

C

oss

C

rss

Gate Leakage Current
Drain-Source On-state

Resistance

=±20V, VDS=0V

V

GS

±

100

VGS=10V, IDS=12A 48 54

=4.5V, IDS=6A 75 90

V

GS

nA

m

Diode For w ar d Voltage ISD=8A, VGS=0V 0.6 1.3 V

Total Ga te Charge 9

=15V, VGS=5V,

V

Gate-Source Charge 5.4
Gate-Drain Charge

I

DS

DS

=10A

nC

2.4

Turn-on Delay Time 11
Turn-on Rise Time 17

Turn-off Delay Time 37
Turn-off Fall Time
Input Capacitance 400
Output Ca pacitance 75
Reverse Transfer

V

=15V,ID=2A,

DD

V

=10V, RG=6

GS

V

=0V

GS

V

=25V

DS

Ω

Frequency=1.0MHz

ns

20

pF

45

Ω

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Aug., 2002

www.anpec.com.tw2

APM3054N

Typical Characteristics

Output Characteristics

20

15

10

5

ID-Drain Current (A)

0

012345

VGS=6,7,8,9,10V

VGS=5V

VGS=4V

VGS=3V

VDS - Drain-to-Source V oltage (V)

Threshold Voltage vs. Temperature

1.2

1.1

1.0

IDS=250uA

Transfer Characteristics

25

TJ=-55°C

20

TJ=25°C

15

10

TJ=125°C

ID-Drain Current (A)

5

0

0246810

VGS - Gate-to-Source V oltage (V)

On-Resistance vs. Drain Current

0.12

0.10

0.08

VGS=4.5V

0.9

(Normalzed)

0.8

0.7

VGS(th)-Threshold Voltage (V)

0.6

-50 -25 0 25 50 75 100 125 150

Tj - Junction T emperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Aug., 2002

0.06

VGS=10V

0.04

RDS(on)-On-Resistance (Ω)

0.02

0.00
0246810

ID - Drain Current (A)

www.anpec.com.tw3

APM3054N

Typical Characteristics

On-Resistance vs. Gate-to-Source Voltage

0.35

0.30

0.25

0.20

ID=6A

0.15

0.10

RDS(on)-On-Resistance (Ω)

0.05

0.00
2345678910

VGS - Gate-to-Source V oltage (V)

On-Resistance vs. Junction T emperature

0.10

VGS=10V
IDS=12A

0.09

0.08

0.07

0.06

0.05

0.04

0.03

0.02

RDS(on)-On-Resistance (Ω)

0.01

0.00

-50 -25 0 25 50 75 100 125 150

TJ - Junction Temperature (°C)

On-Resistance vs. Junction T emperature

0.10

VGS=10V

0.09

ID=12A

0.08

0.07

0.06

0.05

0.04

(Normalized)

0.03

0.02

RDS(on)-On-Resistance (Ω)

0.01

0.00

-50 -25 0 25 50 75 100 125 150

TJ - Junction Temperature (°C)

Gate Charge

10

VDS=15V
IDS=10A

8

6

4

2

VGS-Gate-Source Voltage (V)

0

2.5 5.0 7.5 1 0.0 12.5 15.0

QG - Gate Charge (nC)

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Aug., 2002

www.anpec.com.tw4