ANPEC APM3040NDC-TR Datasheet

APM3040N

N-Channel Enhancement Mode MOSFET

Features

• 30V/4.5A, R

R
R

••

•

Super High Dense Cell Design for Extremely

••

••

• High Power and Current Handling Capability

••

••

• SOT-89 Package

••

=31mΩ(typ.) @ VGS=10V

DS(ON)

=35mΩ(typ.) @ VGS=4.5V

DS(ON)

=55mΩ(typ.) @ VGS=2.5V

DS(ON)

Pin Description

Applications

• Power Management in Notebook Computer.

• Portable Equipment and Battery Powered

Systems.

Ordering and Marking Information

123

GDS

Top View of SOT-89

D

G

S

N-Channel MOSFET

APM 3040N

Handling Code
Tem p. Range
Package Code

APM 3040N D :

APM 3040N
XXXXX

Absolute Maximum Ratings (T

Package Code

D : S O T-8 9

Operating Junction Tem p. Range

C : -55 to 125 C

Handling Code

TR : Tape & Reel

XXXXX - Date Code

= 25°C unless otherwise noted)

A

°

Symbol Parameter Rating Unit

V

Drain-Source Voltage 30
Gate-Source Voltage ±12
Maximum Drain Current – Continuous 4.5
Maximum Pulsed Drain Current ( pulse width ≤ 300µs)

V

A

20

V

IDM

DSS

GSS

ID



ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2003

www.anpec.com.tw1

APM3040N

Absolute Maximum Ratings (Cont.) (T

= 25°C unless otherwise noted)

A

Symbol Parameter Rating Unit

TA=25°C 1.4

W

T
R

PD

TJ

STG

θ

Maximum Power Dissipation

T

=100°C 0.5

A

Maximum Junction Temperature
Storage Temperature Range -55 to 150 °C

JA

Thermal Resistance – Junction to Ambient 85 °C/W

150 °C



Electrical Characteristics (T

Symbol Parameter Test Condition

Static

BV

I

V

I

DSS

DSS

GS(th)

GSS

Drain-Source Breakdown
Voltage

Zero Gate Voltage Drain
Current

Gate Threshold Voltage

Gate Leakage Curren t

= 25°C unless otherwise noted)

A

V

=0V, IDS=250µA

GS

V

=24V, VGS=0V

DS

V

DS=VGS

V

GS

, IDS=250µA

=±12V, VDS=0V

APM3040N

Min. Typ. Max.

Unit

30 V



1

µA

0.6 0.75 1.5 V



±100

nA

VGS=10V, IDS=3A  31 40

Drain-Source On-s tate

R

a

DS(ON)

V

SD

Resistance

a

Diode Forward Voltage ISD=0.5A, VGS=0V 0.7 1.3 V

VGS=4.5V, IDS=1.5A  35 50

=2.5V, IDS=0.5A  55 70

V

GS

Dynamicb

Qg Total Gate Charge  9.2 13

V

=10V, VGS=4.5V,

Qgs Gate-Source Charge  2.5

Qgd Gate-Drain Charge

t

Turn-on Delay Time  11 22

d(ON)

tr Turn-on Rise Time  17 32

t

Turn-off Delay Time  37 68

d(OFF)

tf Turn-off Fall Time

C

iss

C

oss

C

rss

Input Capacitance  426

Output Capacitance  80

Reverse Transfer

DS

I

=3A

DS

V

=15V,ID=3A,

DD

V

=10V, RG=6Ω

GS

=0V

V

GS

=25V

V

DS

Frequency=1.0MHz

 2

 20 38

 39

Notes: a: Pulse test; pulse width ≤ 300µs, duty cycle ≤ 2%.

b

: Guaranteed by design, not subject to production testing.

mΩ

nC

ns

pF

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2003

www.anpec.com.tw2

APM3040N

Typical Characteristics

Output Characteristics

20
18
16
14
12
10

8
6

ID-Drain Current (A)

4
2
0

012345678910

VGS=3,4,5,6,7,8,9,10 V

Threshold Voltage vs. Temperature

1.6

1.4

1.2

1.0

0.8

VGS=2V

VGS=1.5V

IDS =250µA

(Normalzed)

0.6

0.4

VGS(th)-Threshold Voltage (V)

0.2

-50 -25 0 25 5 0 75 100 125 150

Tj - Junction T emperature (°C)

Transfer Characteristics

20
18
16
14
12
10

8
6

ID-Drain Current (A)

4
2
0

0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0

Tj=125oC

Tj=25oC

Tj=-55oC

VGS - Gate-to-Source V oltage (V)VDS - Drain-to-Source V oltage (V)

On-Resistance vs. Drain Current

0.10

0.09

0.08

0.07

0.06

0.05

0.04

0.03

DS(on)-On-Resistance (Ω)

0.02

R

0.01

0.00
0246810

VGS=2.5V

VGS=4.5V

VGS=10V

ID - Drain Current (A)

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2003

www.anpec.com.tw3