ANPEC APM3023NVC-TR, APM3023NUC-TR, APM3023NFC-TR Datasheet

APM3023N

N-Channel Enhancement Mode MOSFET

Features

• 30V/30A, R

R

••

•

Super High Dense Cell Design

••

••

• High Power and Current Handling Capability

••

••

• TO-252.TO-220 and SOT-223 Packages

••

=15mΩ(typ.) @ VGS=10V

DS(ON)

=22mΩ(typ.) @ VGS=5V

DS(ON)

Pin Description

Top View of T O-252

Applications

• Switching Regulators

• Switching Converters

Ordering and Marking Information

APM 3023N

Handling Code
Tem p. Range
Package Code

Package Code

U : TO-252 V : S O T -22 3 F : T O -2 20

Operating Junction Tem p. Range

C : -55 to 150 C

Handling Code

TR : Tape & Reel

123

G DS

TO-220 Package

°

123

SDG

Top View of SOT-223

3
2
1

S
D

G

APM 3023N U /F:
:

APM3023N V :

APM 3023N
XXXXX

APM 3023N
XXXXX

Absolute Maximum Ratings (T

Symbol

V

DSS

V

GSS

*

I

D

I

DM

Drain-Source Voltage 30
Gate-Source Voltage ±20
Maximum Drain Current – Continuous 30
Maximum Drain Current – Pulsed 70

Parameter Rating Unit

XXXXX

XXXXX - Date Code

= 25°C unless otherwise noted)

A

- Da te C o d e

V

A

* Surface Mounted on FR4 Board, t ≤ 10 sec.

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp.
Rev. A.6 - July., 2003

www.anpec.com.tw1

APM3023N

Absolute Maximum Ratings (Cont.) (T

Symbol

Parameter Rating Unit

= 25°C unless otherwise noted)

A

TA=25°C

P

T

T

STG

Electrical Characteristics (T

Maximum Power Dissipation

D

T

=100°C

A

Maximum Junction Temperature

J

Storage Temperature Range -55 to 150 °C

= 25°C unless otherwise noted)

A

Symbol Parameter Test Condition

Static

BV

I

DSS

V

GS(th)

I

GSS

R

DS(ON)

V

Dynamic

Q
Q
Q

t

d(ON)

t

d(OFF)

C

C

C

Drain-Source Breakdown

DSS

Voltage
Zero Gate Voltage Drain

Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state

a

Resistance

a

Diode Forward Voltage ISD=15A , VGS=0V

SD

b

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain Charge

gd

V

GS

VDS=24V , VGS=0V 1
V

DS

V

DS=VGS

V

GS

VGS=10V , IDS=20A
V

GS

V

DS

V

GS

Turn-on Delay Time

T

Turn-on Rise Time

r

Turn-off Delay Time

T

Turn-off Fall T ime

f

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

V

DD

V

GEN

V

GS

V

DS

Frequency=1.0MHz

=0V , IDS=250µA

=24V, VGS=0V, Tj= 55°C

, IDS=250µA

=±20V , VDS=0V

=5V , I

DSs

=10A

=15V , IDS= 10A
=5V ,

=15V , IDS=2A ,

=10V , RG=6

=0V
=15V

TO-252/TO-220 62.5

SOT-223 3

TO-252/TO220 25

SOT-223 1.2

150 °C

APM3023N

Min. Typ. Max.

30 V

11.52

15 20
22 28

0.7 1.3

15 20

5.8

3.8
11 18
17 26

Ω

37 54
20 30

1200

220
100

±

5

100

W

W

Unit

m

µ

V

nA

V

nC

ns

pF

A

Ω

Notes

a

: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

b

: Guaranteed by design, not subject to production testing

Copyright  ANPEC Electronics Corp.
Rev. A.6 - July., 2003

www.anpec.com.tw2

APM3023N

Typical Characteristics

Output Characteristics

30

VGS=5,6,7,8,9,10V

25

20

15

10

-Drain Current (A)

DS

I

5

0

0246810

VDS-Drain-to-Source Voltage (V)

Threshold Voltage vs. Junction Temperature

1.2

1.0

VGS=4V

VGS=3V

IDS=250µA

Transfer Characteristics

40

VDS=10V

30

20

-Drain Current (A)

10

DS

I

0

1.0 1.5 2.0 2.5 3.0 3.5 4.0

TJ=125°C

TJ=25°C

TJ=-55°C

VGS-Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current

0.040

0.035

0.030

VGS=5V

0.8

(Normalized)

0.6

GS(th)-Threshold Voltage (V)

V

0.
4

-50 -25 0 25 50 75 100 125 150

Tj-Junction Temperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.6 - July., 2003

0.025

0.020

0.015

-On-Resistance (Ω)

0.010

DS(ON)

R

0.005

0.000
0 5 10 15 20 25 30

VGS=10V

IDS-Drain Current (A)

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APM3023N

Typical Characteristics (Cont.)

On-Resistance vs. Gate-to-Source Voltage

45
40
35
30
25
20

-On-Resistance (Ω)

15
10

DS (ON)

R

5
0

345678910

Gate Voltage (V)

Gate Charge

IDS=20A

10

VDS=15V

IDS=10A

8

On-Resistaence vs. Junction Temperature

1.6

VGS=10V
ID=12A

1.4

1.2

1.0

(Normalized)

-On-Resistance (Ω)

DS(ON)

0.8

R

0.6

-50 -25 0 25 50 75 100 125 150

Tj-Junction Temperature (°C)

Capacitance Characteristics

2000

1000

Ciss

6

4

2

-Gate-to-Source Voltage (V)

GS

V

0

0 5 10 15 20 25 30

QG-Total Gate Charge (nC)

Copyright  ANPEC Electronics Corp.
Rev. A.6 - July., 2003

500

Coss

Crss

C-Capacitance (pF)

100

Frequency=1MHz

0.1 1 10

VDS-Drain-to-Source Voltage (V)

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30